Patent application number | Description | Published |
20100127266 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SAME - A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode. | 05-27-2010 |
20120058601 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; source and drain electrodes provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source and drain electrodes above the gate electrode. | 03-08-2012 |
20120075260 | ACTIVE-MATRIX ORGANIC EL DISPLAY DEVICE AND METHOD FOR DRIVING SAME - According to one embodiment, an active-matrix organic EL display device includes a display region and a peripheral region. The display region includes a plurality of pixels disposed in a matrix configuration. The peripheral region includes a drive circuit. The pixel includes a bottom gate-type first transistor, a cathode electrode, an anode electrode, and an organic EL layer provided between the cathode electrode and the anode electrode. The drive circuit includes a bottom gate-type second transistor and a back gate electrode provided on the second transistor. A gate potential of the first transistor is lower than a potential of the cathode electrode when the pixel displays a minimum luminance. | 03-29-2012 |
20120075278 | ORGANIC EL DISPLAY - According to one embodiment, an organic EL display includes a substrate and a pixel. The pixel is disposed on the substrate and includes a first color displaying portion and a second color displaying portion. The first color displaying portion has a first organic light emitting layer. The second color displaying portion has a second organic light emitting layer having an emission spectrum different from an emission spectrum of the first organic light emitting layer. The first color displaying portion has two sub-pixels. One of the two sub-pixels has a color filter. | 03-29-2012 |
20120132909 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SAME - A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode. | 05-31-2012 |
20120211745 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms. | 08-23-2012 |
20120223301 | THIN FILM TRANSISTOR, MANUFACTURING METHOD OF SAME, AND DISPLAY DEVICE - According to one embodiment, a thin film transistor includes: a substrate; a semiconductor layer; first and second insulating films; and gate, source and drain electrodes. The semiconductor layer is provided on the substrate. The semiconductor layer is made of an oxide having indium. The semiconductor layer has first and second regions and other region. The first insulating film covers a top face of the other region. The second insulating film covers at least a pair of side surfaces of the semiconductor layer. The second insulating film is formed under a condition different from that for the first insulating film. The gate electrode is provided on the first and second insulating films or below the semiconductor layer. The source and drain electrodes are provided on the first and second regions, respectively. The drain and source electrodes sandwich the pair of the side surfaces of the semiconductor layer. | 09-06-2012 |
20120242562 | DISPLAY DEVICE - According to one embodiment, a display device includes an insulating layer, a display unit, and an organic EL layer. The display unit is provided on a major surface of the insulating layer and includes a plurality of gate lines, a plurality of signal lines, a plurality of power source lines and a plurality of pixel units arranged in a matrix configuration. The EL layer is provided on the display unit. Each pixel unit includes a drive transistor and a resistor. The drive transistor includes a drive gate electrode, a drive source electrode, and a drive drain electrode. The drive source electrode or the drive drain electrode is connected to one of the power source lines. An end of the resistor is connected to the drive gate electrode. An other end of the resistor is connected to one of the gate line, the signal line, and the power source line. | 09-27-2012 |
20130075719 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE - According to one embodiment, a thin film transistor includes a substrate, a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, a source electrode, and a drain electrode. The gate electrode is provided on a part of the substrate. The first insulating film covers the gate electrode. The oxide semiconductor film is provided on the gate electrode via the first insulating film. The second insulating film is provided on a part of the oxide semiconductor film. The source and drain electrodes are respectively connected to first and second portions of the oxide semiconductor film not covered with the second insulating film. The oxide semiconductor film includes an oxide semiconductor. Concentrations of hydrogen contained in the first and second insulating films are not less than 5×10 | 03-28-2013 |
20130076687 | TOUCH PANEL AND DISPLAY DEVICE - According to one embodiment, a touch panel includes first interconnections, second interconnections, sensor units and a control unit. The first interconnections are arranged along a first direction, and extend along a second direction intersecting with the first direction. The second interconnections are arranged along a third direction intersecting with the first direction, and extend along a fourth direction intersecting with the third direction. The sensor units are provided in intersection portions of the first and second interconnections, include first and second ferromagnetic layers, and an intermediate layer, allow a current to be passed, and have one end connected to the first interconnections and another end connected to the second interconnections. The control unit is connected to the first and second interconnections. An electric resistance of the sensor units changes in accordance with a stress applied. The control unit senses a change in the electric resistance. | 03-28-2013 |
20130078752 | METHOD FOR MANUFACTURING DISPLAY DEVICE - According to one embodiment, a method is disclosed for manufacturing a display device. A film material layer is formed on a support substrate. A first heating process for the film material layer at a first temperature to form a film layer and a second heating process for a second region surrounding a first region at a second temperature higher than the first temperature are performed. The first region is provided in a central part of the film layer. A display layer is formed in the first region and a peripheral circuit section is formed at least in a part of the second region. A third heating process is performed for at least a part of the film layer at a third temperature higher than the second temperature. In addition, the film layer is peeled off from the support substrate. | 03-28-2013 |
20130302534 | METHOD FOR MANUFACTURING DISPLAY DEVICE - According to one embodiment, a method is disclosed for manufacturing a display device. A film material layer is formed on a support substrate. A first heating process for the film material layer at a first temperature to form a film layer and a second heating process for a second region surrounding a first region at a second temperature higher than the first temperature are performed. The first region is provided in a central part of the film layer. A display layer is formed in the first region and a peripheral circuit section is formed at least in a part of the second region. A third heating process is performed for at least a part of the film layer at a third temperature higher than the second temperature. In addition, the film layer is peeled off from the support substrate. | 11-14-2013 |
20140138682 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SAME - A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; source and drain electrodes provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source and drain electrodes above the gate electrode. | 05-22-2014 |
20140374753 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SAME - A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; source and drain electrodes provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source and drain electrodes above the gate electrode. | 12-25-2014 |