| Patent application number | Description | Published |
|---|
| 20090066823 | SOLID-STATE IMAGE PICKUP DEVICE AND CLAMP CONTROL METHOD THEREFOR - In an analog front end (FE) IC chip having a CDS (Correlated Double Sampling) function and an AGC (Automatic Gain Control) function, a clamp circuit for clamping an output signal during a black reference signal period is equipped with a mechanism for suppressing the effect of noises contaminated from a power source, external circuits, etc. | 03-12-2009 |
| 20090237545 | SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF - An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal. | 09-24-2009 |
| 20100110243 | SOLID STATE IMAGING DEVICE - A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell ( | 05-06-2010 |
| 20100110244 | SOLID STATE IMAGING DEVICE - A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell ( | 05-06-2010 |
| 20100178725 | SOLID STATE IMAGE PICKUP DEVICE - P type semiconductor well regions | 07-15-2010 |
| 20100308386 | SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING SOLID STATE IMAGE PICKUP DEVICE - Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed. | 12-09-2010 |
| 20110025420 | METHOD OF CONTROLLING SEMICONDUCTOR DEVICE, SIGNAL PROCESSING METHOD, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS - A pre-amplifier (column region unit) of a solid-state imaging device including a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended. | 02-03-2011 |
| 20110221021 | Solid state image pickup device and method of producing solid state image pickup device - Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed. | 09-15-2011 |
