Patent application number | Description | Published |
20090178619 | Substrate processing apparatus - A substrate processing apparatus includes a processing chamber, a substrate holding part that holds substrates of required numbers in the processing chamber, a gas supply/exhaust part that supplies or exhausts required gas into the processing chamber, a rotation part that rotates the substrate holding part, a first heating part provided in the substrate holding part so as to face at least an upper surface of each substrate held by the substrate holding part, and a power supply part that supplies power to the first heating part in a non-contact state by electromagnetic coupling. | 07-16-2009 |
20090178762 | Substrate processing apparatus - A substrate processing apparatus includes a processing chamber, a substrate holding part that holds substrates of required numbers in the processing chamber, a gas supply/exhaust part that supplies or exhausts required gas into the processing chamber, a rotation part that rotates the substrate holding part, a first heating part provided in the substrate holding part so as to face at least an upper surface of each substrate held by the substrate holding part, and a power supply part that supplies power to the first heating part in a non-contact state by electromagnetic coupling. | 07-16-2009 |
20090197425 | SUBSTRATE PROCESSING APPARATUS - An ALD apparatus comprises: a process chamber ( | 08-06-2009 |
20090241835 | Substrate processing apparatus - A substrate processing apparatus includes a processing chamber in which a substrate is mounted, a gas supply unit that supplies processing gas into the processing chamber, a gas exhaust unit that exhausts atmospheric gas in the processing chamber, first and second electrodes to which high-frequency power is applied to set the processing gas to an active state. Each of the first and second electrodes includes a core wire formed of a metal and plural pipe bodies that are joined to one another through the core wire so as to be bendable, and less thermally deformed than the core wire. | 10-01-2009 |
20100130009 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device, in which shape variations of discharge electrodes can be early detected so as to prevent a film having anon-uniform thickness from being formed on a substrate. The substrate processing apparatus includes a process chamber configured to stack a plurality of substrates therein, a gas supply unit configured to supply gas to an inside of the process chamber, at least one pair of electrodes installed in the process chamber and configured to receive high-frequency power to generate plasma that excites the gas supplied to the inside of the process chamber, and a monitoring system configured to monitor a shape variation of the electrodes. | 05-27-2010 |
20100258530 | SUBSTRATE PROCESSING APPARATUS AND PRODUCING METHOD OF DEVICE - A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member ( | 10-14-2010 |
20100323507 | SUBSTRATE PROCESSING APPARATUS AND PRODUCING METHOD OF DEVICE - A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member ( | 12-23-2010 |
Patent application number | Description | Published |
20080251014 | Substrate Processing Apparatus and Reaction Container - A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber. | 10-16-2008 |
20080251015 | Substrate Processing Apparatus and Reaction Container - A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber. | 10-16-2008 |
20090133630 | Batch-Type Remote Plasma Processing Apparatus - A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes. | 05-28-2009 |
20090159440 | Batch-Type Remote Plasma Processing Apparatus - A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied.; and a gas supply member which supplies processing gas into a space between the pair of electrodes. | 06-25-2009 |
Patent application number | Description | Published |
20080286980 | Substrate Processing Apparatus and Semiconductor Device Producing Method - Disclosed is a substrate processing apparatus, including: a processing container; a gas supply section to supply a desired processing gas to the processing container; a gas exhaust section to exhaust a surplus of the processing gas from the processing container; a substrate placing member to place a plurality of substrates thereon in a stacked state in the processing container; and an electrode, to which high frequency electric power is applied, to generate plasma for exciting the processing gas, the electrode including two thin and long linear sections disposed in parallel and a short-circuit section to electrically short-circuit one ends of the linear sections, and the linear sections extending beside the substrates in a direction substantially perpendicular to main faces of the substrates. | 11-20-2008 |
20090071405 | Substrate Processing Apparatus - Disclosed is a substrate processing apparatus, comprising a processing chamber to accommodate one or more substrates, a gas supply section to supply processing gas into the processing chamber, a gas discharge section to discharge the processing gas from the processing chamber, at least a pair of electrodes provided inside the heating section to plasma-excite the processing gas, a protection container made of dielectric to air-tightly accommodate the electrodes, an electricity-receiving section which is electrically connected to the electrodes and which is accommodated in the protection container, and an electricity-feeding section to which high frequency electric power is applied and which is provided near the electricity-receiving section in a state in which at least a wall of the protection container is interposed between the electricity-receiving section and the electricity-feeding section, wherein electric power is supplied from the electricity-feeding section to the electricity-receiving section by electromagnetism coupling. | 03-19-2009 |