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Nobuki
Nobuki Fukui, Nara JP
| Patent application number | Description | Published |
|---|---|---|
| 20080254927 | Power Transmission Chain and Power Transmission Device Using the Same - A power transmission chain used in a power transmission device of the present invention includes: a plurality of link plates having through holes; and a plurality of pin members that are inserted through said through holes and connect said plurality of link plates to one another. An amount of skew in a chain width direction per chain length of 200 mm is 1 to 2 mm in the power transmission chain. Thus, even if misalignment occurs in the power transmission chain, occurrence of abnormal wear and reduction in transmission efficiency can be effectively prevented. | 10-16-2008 |
| 20090029817 | POWER TRANSMISSION CHAIN AND POWER TRANSMISSION APPARATUS - A power transmission chain ( | 01-29-2009 |
Nobuki Kimura, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100008688 | METHOD FOR ALIGNING TRANSFER POSITION OF TRANSFER SYSTEM - Performed is a process of obtaining, when a dummy wafer is transferred between a orienter and a second processing chamber through a transfer path, a coordinate system for correcting a position deviation by calculating a position deviation direction of a transfer position in the orienter corresponding to a direction along which the correction of the position deviation of a transfer position in the second processing chamber can be made; detecting a position deviation of the dummy wafer, after returning it back from the second processing chamber into the orienter through the transfer path, from a position where the dummy wafer was placed before transferring it from the orienter to the second processing chamber through a reference transfer path; correcting the transfer position in the second processing chamber by the transfer path based on the coordinate system for correcting the position deviation so as to reduce the detected position deviation. | 01-14-2010 |
Nobuki Kumazawa, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080252326 | Probe - A conductive plunger | 10-16-2008 |
Nobuki Matsui, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20120097287 | DUCT ARRANGEMENT, DUCT EQUIPMENT, DUCT REINFORCEMENT CONSTRUCTION METHOD, SUPPORT REINFORCEMENT STRUCTURE, AND REINFORCEMENT STRUCTURE FOR SUPPORT FIXING UNIT - Provided is duct equipment including a duct body, a heat insulating material, a external cover, a fiber-reinforced sheet, and fiber-reinforced moldings. The duct body includes a duct wall, a duct passage defined by the duct wall, and duct corners formed in the duct wall when viewed in a cross-section in a direction intersecting a direction in which the duct passage extends. The heat insulating material is installed on an outer circumference of the duct body. The external cover includes a external cover wall installed on an outer circumference of the heat insulating material, and external cover corners formed alone the duct corners. The fiber-reinforced sheet is disposed on the outer circumference of the duct body via an adhesive layer. The fiber-reinforced moldings are disposed adjacent to the fiber-reinforced sheet along the external cover corners via adhesive layers, and have a substantially L-shape when viewed in the cross-section. | 04-26-2012 |
Nobuki Matsuyama, Kusune Higashiosaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20090208978 | Panel Cell Used for Granulocyte Antibody Detection - A panel cell for detecting anti-HNA antibody is disclosed. The panel cell is obtained by introducing a DNA coding for an HNA antigen corresponding to the anti-HNA antibody into a cell so as to enable the expression of the DNA under the condition for use in the detection procedure, wherein the cell for DNA introduction exhibits no detectable reaction with anti-HLA-ABC antibody, anti-HLA-DR antibody, anti-HLA-DQ antibody, anti-HLA-DP antibody, anti-HNA-1 antibody, anti-HNA-2a antibody, anti-HNA-3a antibody, anti-HNA-4 antibody, anti-HNA-5 antibody, and serum from normal subject, in the detection procedure. The panel cell allows accurate and rapid detection of granulocyte antibody. | 08-20-2009 |
Nobuki Nakanishi, Solana Beach, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100160607 | p16 MEDIATED REGULATION OF NMDA RECEPTORS - Discovered is a novel protein and variants thereof whose activity at the NMDA receptor causes an increased efflux of calcium ions through the channel of said receptor. This activity is downregulated by the NR3A subunit of NMDA. Also discovered are the nucleic acid sequences encoding said novel protein and variants thereof. The discovery is useful for the diagnosing of NMDA receptor dysregulation and the treatment of NMDA receptor dysregulation related disorders. In addition, the discovery is useful for the further discovery of modulators affecting the activity of the novel protein and variants thereof at the NMDA receptor. | 06-24-2010 |
| 20120046446 | p16 MEDIATED REGULATION OF NMDA RECEPTORS - Discovered is a novel protein and variants thereof whose activity at the NMDA receptor causes an increased efflux of calcium ions through the channel of said receptor. This activity is downregulated by the NR3A subunit of NMDA. Also discovered are the nucleic acid sequences encoding said novel protein and variants thereof. The discovery is useful for the diagnosing of NMDA receptor dysregulation and the treatment of NMDA receptor dysregulation related disorders. In addition, the discovery is useful for the further discovery of modulators affecting the activity of the novel protein and variants thereof at the NMDA receptor. | 02-23-2012 |
Nobuki Oka, Nagasaki JP
| Patent application number | Description | Published |
|---|---|---|
| 20100322828 | NANOPARTICLE-DISPERSED HIGH-PERFORMANCE LIQUID FLUID, PRODUCTION METHOD AND APPARATUS FOR THE FLUID, AND LEAK DETECTION METHOD FOR THE FLUID - Suppression or enhancement of various properties of a liquid fluid is aimed by improving uniform dispersion of nanoparticles by means of making a state in which no oxidized film exists on the surfaces of the nanoparticles to be dispersed in the liquid fluid. The location of the liquid fluid is confirmed with ease by enhancing the brightness of light emission of the fluid through uniform dispersion of the nanoparticles in the liquid fluid containing a material having a flame reaction. In this way, as to liquid fluids utilized in various industries, it is possible to offer a technology to desirably enhance or suppress a property desired to be enhanced and a property desired to be suppressed among various properties that its constituents have. | 12-23-2010 |
Nobuki Sunagare, Matsue-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100192858 | THIN FILM, METHOD AND APPARATUS FOR FORMING THE SAME, AND ELECTRONIC COMPONENT INCORPORATING THE SAME - A method for forming a thin film includes the steps of: supplying a deposition material in the form of a liquid onto a heated surface; heating and vaporizing the deposition material on the heated surface while the deposition material is undergoing movement; and depositing the deposition material onto a deposition surface. The deposition material is supplied onto a position of the heated surface where the vaporized deposition material does not reach the deposition surface. | 08-05-2010 |
Nobuki Tada, Miyoshi-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110039316 | YEAST MUTANT AND SUBSTANCE PRODUCTION METHOD USING THE SAME - According to the present invention, the ability to produce a desired product is significantly improved and the growth rate and the fermentation rate are maintained at excellent levels for yeast upon production of a desired product with the use of yeast | 02-17-2011 |
Nobuki Takahashi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090308500 | ALUMINUM ALLOY FIN MATERIAL FOR HEAT EXCHANGER AND METHOD OF PRODUCTION OF SAME AND METHOD OF PRODUCTION OF HEAT EXCHANGER BY BRAZING FIN MATERIAL - An aluminum alloy fin material for a heat exchanger having suitable strength before brazing enabling easy fin formation, having high strength after brazing, having a high thermal conductivity (electrical conductivity) after brazing, and having superior sag resistance, erosion resistance, self corrosion prevention, and sacrificial anode effect, a method of production of the same, and a method of production of a heat exchanger using the fin material are provided, that is, an aluminum alloy fin material having a chemical composition of Si: 0.7 to 1.4 wt %, Fe: 0.5 to 1.4 wt %, Mn: 0.7 to 1.4 wt %, and Zn: 0.5 to 2.5 wt %, Mg as an impurity limited to 0.05 wt % or less, and the balance of unavoidable impurities and Al, and having a tensile strength after brazing of 130 MPa or more, a yield strength after brazing of 45 MPa or more, a recrystallized grain size after brazing of 500 μm or more, and an electrical conductivity after brazing of 47% IACS or more, a method of producing an aluminum alloy fin material comprising cold rolling/annealing/cold rolling/annealing/cold rolling a thin slab continuously cast by a twin-belt system from a melt of the above composition under predetermined conditions, and a method of production of a heat exchanger comprising cooling the fin material at a predetermined rate after brazing heating. | 12-17-2009 |
| 20100104273 | CAMERA - A camera includes a display device capable of displaying on a single screen a plurality of images, each of which can be observed from one of a plurality of directions; a selection device that selects any one of a plurality of operating modes; and a display control device that displays at the display device the plurality of images each correlated to the operating mode selected via the selection device. | 04-29-2010 |
Nobuki Takayama, Kakogawa-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090103101 | OVEN WIDTH MEASUREMENT INSTRUMENT AND PUSH-OUT RAM PROVIDED WITH THE INSTRUMENT - An oven width measuring instrument capable of measuring the oven width continuously while being subject to no restrictions of measurement area or measuring time has: a sensor unit SU composed of an integrated combination of laser displacement sensors | 04-23-2009 |
Nobuki Tanaka, Tochigi JP
| Patent application number | Description | Published |
|---|---|---|
| 20120068106 | RESIN COMPOSITION AND SEMICONDUCTOR DEVICE PRODUCED BY USING THE SAME - A resin composition which is excellent in quick curing and can be used for curing in conventionally used ovens, and a semiconductor device which is excellent in reliability such as solder crack resistance or the like when the resin composition is used as a die attach material for semiconductor. Further preferably, a resin composition which has a sufficient low stress property, good adhesion and excellent bleeding property. | 03-22-2012 |
Nobuki Tanaka, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110083890 | EPOXY RESIN COMPOSITION, PREPREG, METAL-CLAD LAMINATE, PRINTED WIRING BOARD AND SEMICONDUCTOR DEVICE - The present invention is to provide an epoxy resin composition uniformly containing a large amount of inorganic fillers, excellent in heat resistance and flame resistance, and having good impregnation into a base material, and a prepreg using the epoxy resin composition, having good tackiness, and being easy in handling. Furthermore, it is to provide a printed wiring board using a metal-clad laminate formed using the prepreg and/or the prepreg or the epoxy resin composition, capable of easily conducting an ENEPIG process, and a semiconductor device using the printed wiring board, excellent in performances. An epoxy resin composition comprises a solid epoxy resin, a silica nanoparticle having an average particle diameter of 1 nm or more and 100 nm or less, and a silica particle having an average particle diameter larger than that of the silica nanoparticle, in the range of 0.1 μm or more and 5.0 μm or less. | 04-14-2011 |
| 20110194261 | PREPREG, LAMINATE, PRINTED WIRING BOARD, AND SEMICONDUCTOR DEVICE - The present invention is to provide a prepreg capable of significantly decreasing generation of voids in a glass fiber base material and forming a printed wiring board and a semiconductor having high reliability, a laminate thereof, and a printed wiring board and a semiconductor device using the same. A prepreg comprising a glass fiber base material (A) impregnated with a thermosetting resin composition (B), wherein an inorganic particle having an average particle diameter of 500 nm or less is attached on a glass fiber surface of the glass fiber base material (A). | 08-11-2011 |
Nobuki Yamashita, Nagasaki JP
| Patent application number | Description | Published |
|---|---|---|
| 20100229935 | PHOTOVOLTAIC DEVICE - The short-circuit current of a photovoltaic device is improved by optimizing the transparent conductive layer. A photovoltaic device comprising a first transparent electrode layer, an electric power generation layer, a second transparent electrode layer and a back electrode layer on a substrate, wherein the film thickness of the second transparent electrode layer is not less than 80 nm and not more than 100 nm, and the light absorptance for the second transparent electrode layer in a wavelength region from not less than 600 nm to not more than 1,000 nm is not more than 1.5%. Also, a photovoltaic device wherein the film thickness of the second transparent electrode layer is not less than 80 nm and not more than 100 nm, and the reflectance for light reflected at the second transparent electrode layer and the back electrode layer is not less than 91% in the wavelength region from not less than 600 nm to not more than 1,000 nm. | 09-16-2010 |
| 20100269897 | PHOTOVOLTAIC DEVICE AND PROCESS FOR PRODUCING SAME - A photovoltaic device that exhibits improved light absorption properties for the electric power generation layer and a process for producing such a photovoltaic device are provided by optimizing the surface shape of the back surface structure. A photovoltaic device | 10-28-2010 |
| 20110092012 | PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE - A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate. | 04-21-2011 |
Nobuki Yoshimatsu, Cambridge GB
| Patent application number | Description | Published |
|---|---|---|
| 20090315153 | NANO STRUCTURE AND MANUFACTURING METHOD OF NANO STRUCTURE - To provide a method of manufacturing a nano structure having a pattern of 2 μm or more in depth formed on the surface of a substrate containing Si and a nano structure having a pattern of a high aspect and nano order. A nano structure having a pattern of 2 μm or more in depth formed on the surface of a substrate containing Si, wherein the nano structure is configured to contain Ga or In on the surface of the pattern, and has the maximum value of the concentration of the Ga or the In positioned within 50 nm of the surface of the pattern in the depth direction of the substrate. Further, its manufacturing method is configured such that the surface of the substrate containing Si is irradiated with a focused Ga ion or In ion beam, and the Ga ions or the In ions are injected, while sputtering away the surface of the substrate, and a layer containing Ga or In is formed on the surface of the substrate, and with this layer taken as an etching mask, a dry etching is performed. | 12-24-2009 |
| 20110027998 | Method of Manufacturing A Nano Structure By Etching, Using A Substrate Containing Silicon - A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 μm tin in depth according to a predetermined line width. | 02-03-2011 |