Patent application number | Description | Published |
20090072253 | SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING UNDERLYING LAYER - Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a <110> direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the <110> direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane. | 03-19-2009 |
20090072266 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer. | 03-19-2009 |
20100019255 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - There is provided a semiconductor light-emitting device capable of an attempt to further decrease a leakage current in a current-blocking layer and including (A) a light-emitting portion ( | 01-28-2010 |
20100047947 | Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing - A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the <110> direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θ | 02-25-2010 |
20110068363 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer. | 03-24-2011 |
20110249975 | Communications system and communications lighting apparatus - An optical-information transmitting, lighting apparatus | 10-13-2011 |
20120009711 | SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING UNDERLYING LAYER - A method of making a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a <110> direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the <110> direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane. | 01-12-2012 |
20120122257 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT, FABRICATION METHOD THEREOF, CONVEX PART FORMED ON BACKING, AND CONVEX PART FORMATION METHOD FOR BACKING - A convex part formation method of forming a convex part in parallel with a < | 05-17-2012 |
20140151836 | OPTICAL SEMICONDUCTOR APPARATUS - The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber. | 06-05-2014 |