| Patent application number | Description | Published |
|---|
| 20080210936 | Hetero-Crystalline Semiconductor Device and Method of Making Same - A hetero-crystalline semiconductor device and a method of making the same include a non-single crystalline semiconductor layer and a nanostructure layer that comprises a single crystalline semiconductor nanostructure integral to a crystallite of the non-single crystalline semiconductor layer. | 09-04-2008 |
| 20080210937 | Hetero-Crystalline Structure and Method of Making Same - A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth. | 09-04-2008 |
| 20080213603 | Methods of forming nanostructures on metal-silicide crystallites, and resulting structures and devices - Various embodiments of the present invention are directed to methods of forming nanostructures on non-single crystal substrates, and resulting nanostructures and nanoscale functional devices. In one embodiment of the present invention, a method of forming nanostructures includes forming a multi-layer structure comprising a metallic layer and a silicon layer. The multi-layer structure is subjected to a thermal process to form metal-silicide crystallites. The nanostructures are grown on the metal-silicide crystallites. In another embodiment of the present invention, a structure includes a non-single-crystal substrate and a layer formed over the non-single-crystal substrate. The layer includes metal-silicide crystallites. A number of nanostructures may be formed on the metal-silicide crystallites. The disclosed structures may be used to form a number of different types of functional devices for use in electronics and/or optoelectronics devices. | 09-04-2008 |
| 20080237568 | Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures - Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure. | 10-02-2008 |
| 20090001498 | Nanowire photodiodes and methods of making nanowire photodiodes - Nanowire-based photodiodes are disclosed. The photodiodes include a first optical waveguide having a tapered first end, a second optical waveguide having a tapered second end, and at least one nanowire comprising at least one semiconductor material connecting the first and second ends in a bridging configuration. Methods of making the photodiodes are also disclosed. | 01-01-2009 |
| 20090188544 | Nanowire-Based Device And Array With Coaxial Electrodes - A nanowire-based photonic device and an array employ nanowires connecting between coaxially arranged electrodes in a non-uniform manner along a vertical extent of the electrodes. The device includes a pair of the electrodes separated by a circumferential gap. The nanowires chaotically emanate from an inner electrode of the pair and connect across the circumferential gap to an outer electrode of the pair. The array includes an outer electrode having an interconnected pattern of cells and inner electrodes, one per cell, arranged coaxially with and separated from the outer electrode by respective circumferential gaps. The nanowires chaotically emanate from the inner electrodes and connect across the respective circumferential gaps of the cells to the outer electrode. The device and the arrays further include a semiconductor junction between the electrodes. | 07-30-2009 |
| 20090188552 | Nanowire-Based Photovoltaic Cells And Methods For Fabricating The Same - Embodiments of the present invention relate to nanowire-based photovoltaic cells and to methods for fabricating the same. In one embodiment, a photovoltaic cell includes a first semiconductor layer doped with a first impurity and disposed on a portion of a first raised surface of a substrate and a second semiconductor layer doped with a second impurity and disposed on a second raised surface of the substrate. The first semiconductor layer has at least one negatively sloped surface, and the second semiconductor layer has at least one positively sloped surface neighboring the at least one negatively sloped surface of the first semiconductor layer. The photovoltaic cell includes at least one nanowire electronically coupled to the negatively sloped surface of the first semiconductor layer and electronically coupled to the positively sloped surface of the second semiconductor layer. | 07-30-2009 |
| 20090189145 | Photodetectors, Photovoltaic Devices And Methods Of Making The Same - A photodetector includes a first layer, a second layer and a plurality of nanowires established between the first and second layers. At least some of the plurality of nanowires have a bandgap that is different from a bandgap of at least some other of the plurality of nanowires. | 07-30-2009 |
| 20090321715 | HETERO-CRYSTALLINE STRUCTURE AND METHOD OF MAKING SAME - A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth. | 12-31-2009 |
| 20090321782 | Apparatus And Method For Nanowire Optical Emission - An optical emitter includes at least one nanowire connected in a circuit such that current selectively flows into the nanowire. The nanowire has a length-to-diameter ratio of ten or less. A method for generating optical emission includes applying a voltage across a nanowire to inject charge carriers into the nanowire, the nanowire having a length-to-diameter ratio of ten or less; and confining the charge carriers within the nanowire by placing a high bandgap material at each end of the nanowire, wherein the charge carriers recombine to emit optical energy. | 12-31-2009 |
| 20110023948 | SOLAR CELL EMPLOYING A NANOWIRE - One embodiment in accordance with the invention is a solar cell comprising a non-single crystal substrate; a nanowire grown from a surface of the non-single crystal substrate; and an electrode coupled to the nanowire, wherein the nanowire is electrically conductive and is for absorbing electromagnetic wave and generating a current. | 02-03-2011 |
