Patent application number | Description | Published |
20110127484 | RESISTANCE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF - According to one embodiment, a resistance change memory includes a first interconnect extending in a first direction, a second interconnect extending in a second direction intersecting with the first direction, and a cell unit which is provided between the first interconnect and the second interconnect. The cell unit includes a non-ohmic element and a memory element. The non-ohmic element includes a first silicon layer of an n-conductivity type and a conducting layer in contact with a first face of the first silicon layer. The memory element stores data according to a reversible change of a resistance state. The first silicon layer includes a first element and a second element as donor. | 06-02-2011 |
20110233500 | SEMICONDUCTOR MEMORY DEVICE INCLUDING MEMORY CELL HAVING RECTIFYING ELEMENT AND SWITCHING ELEMENT - According to one embodiment, a semiconductor memory device includes a first conductive line, a second conductive line, a rectifying element, a switching element, a first side wall film and a second side wall film. The first conductive line extends in a first direction. The second conductive line extends in a second direction crossing the first direction. The rectifying element is connected between the first and second conductive lines. The switching element is connected in series with the rectifying element between the first and second conductive lines. The first side wall film is formed on a side surface of the rectifying element. The second side wall film is formed on a side surface of at least one of the first and second conductive lines. At least one of a film type and a film thickness of the second side wall film is different from that of the first side wall film. | 09-29-2011 |
20120145986 | SEMICONDUCTOR MEMORY DEVICE - A memory cell comprises a diode layer, a variable resistance layer, a first electrode layer. The diode layer functions as a rectifier element. The variable resistance layer functions as a variable resistance element. The first electrode layer is provided between the variable resistance layer and the diode layer. The first electrode layer comprises a titanium nitride layer configured by titanium nitride. Where a first ratio is defined as a ratio of titanium atoms to nitrogen atoms in a first region in the titanium nitride layer and a second ratio is defined as a ratio of titanium atoms to nitrogen atoms in a second region which is in the titanium nitride layer and is nearer to the variable resistance layer than is the first region, the second ratio is larger than the first ratio. | 06-14-2012 |
20120313065 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor memory device includes a cell array layer including a first wire, a memory cell stacked on the first wire, and a second wire formed on the memory cell. The memory cell includes a variable resistance element and a current control element The current control element includes a first conductivity-type semiconductor into which a first impurity is doped, an i-type semiconductor in contact with the first conductivity-type semiconductor, a second conductivity-type semiconductor into which a second impurity is doped, and an impact ionization acceleration unit being formed between the i-type semiconductor and one of the first conductivity-type semiconductor and the second conductivity-type semiconductor. | 12-13-2012 |
20130277640 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A non-volatile semiconductor memory device includes a cell array layer including a first wire, one or more memory cells stacked on the first wire, and a second wire formed on the memory cell so as to cross the first wire, wherein the memory cell includes a current rectifying element and a variable resistance element, and an atomic composition ratio of nitrogen is higher than that of oxygen in a part of a sidewall of the current rectifying element. | 10-24-2013 |
20140003127 | SEMICONDUCTOR MEMORY DEVICE | 01-02-2014 |
20140003128 | SEMICONDUCTOR MEMORY DEVICE | 01-02-2014 |
20140021436 | SEMICONDUCTOR MEMORY DEVICE - A memory cell comprises a diode layer, a variable resistance layer, a first electrode layer. The diode layer functions as a rectifier element. The variable resistance layer functions as a variable resistance element. The first electrode layer is provided between the variable resistance layer and the diode layer. The first electrode layer comprises a titanium nitride layer configured by titanium nitride. Where a first ratio is defined as a ratio of titanium atoms to nitrogen atoms in a first region in the titanium nitride layer and a second ratio is defined as a ratio of titanium atoms to nitrogen atoms in a second region which is in the titanium nitride layer and is nearer to the variable resistance layer than is the first region, the second ratio is larger than the first ratio. | 01-23-2014 |
20140347911 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device according to an embodiment comprises a memory cell block that includes a memory cell array, the memory cell array including: a plurality of first lines; a plurality of second lines intersecting the plurality of first lines; and a memory cell that is provided at each of intersections of the plurality of first lines and the plurality of second lines and includes a variable resistance element, the memory cell array further including a protective resistance film that is provided respectively at each of the intersections of the plurality of first lines and the plurality of second lines and that is connected in series with the memory cell and ohmically contacts the memory cell, and the protective resistance film being configured from a material having a resistivity of 1˜100 Ω·cm. | 11-27-2014 |