Patent application number | Description | Published |
20080224271 | Semiconductor Device and Method of Manufacturing Same, Wiring Board and Method of Manufacturing Same, Semiconductor Package, and Electronic Device - Passivation films | 09-18-2008 |
20090174052 | ELECTRONIC COMPONENT, SEMICONDUCTOR PACKAGE, AND ELECTRONIC DEVICE - In a conventional UBM made of, for example, Cu, Ni, or NiP, there has been a problem that when an electronic component is held in high-temperature conditions for an extended period, the barrier characteristic of the UBM is lost and the bonding strength decreases due to formation of a brittle alloy layer at a bonding interface. The present invention improves the problem of decrease in long-term connection reliability of a solder connection portion after storage at high temperatures. An electronic component comprises the electronic component includes an electrode pad formed on a substrate or a semiconductor element and a barrier metal layer formed to cover the electrode pad and the barrier metal layer comprises a CuNi alloy layer on the side opposite the side in contact with the electrode pad, the CuNi alloy layer containing 15 to 60 at % of Cu and 40 to 85 at % of Ni. | 07-09-2009 |
20090302430 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In this semiconductor device, the through-hole is formed in the substrate, and is located under the conductive pattern. The insulating layer is located at the bottom surface of the through-hole. The conductive pattern is located on one surface side of the substrate. The opening pattern is formed in the insulating layer which is located between the through-hole and the conductive pattern, where the distance r | 12-10-2009 |
20100048019 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device | 02-25-2010 |
20100144091 | Semiconductor device and method of manufacturing the same - A method of manufacturing a semiconductor device includes forming an interconnect member, mounting a first semiconductor chip having a semiconductor substrate in a face-down manner on the interconnect member, forming a resin layer on the interconnect member to cover a side surface of the first semiconductor chip, thinning the first semiconductor chip and the resin layer, forming an inorganic insulating layer on a back surface of the first semiconductor chip so as to be in contact with the back surface and to extend over the resin layer, and forming a through electrode so as to penetrate the inorganic insulating layer and the semiconductor substrate. | 06-10-2010 |
20110027987 | Method and apparatus for manufacturing semiconductor device - A method for manufacturing a semiconductor device includes forming a laminated structure of a plurality of metal films on a semiconductor substrate using an electroless plating method. The forming of the metal films includes: performing an electroless plating process including a reduction reaction using a first plating tank; and performing an electroless plating process by only a substitution reaction using a second plating tank. The electroless plating process including the reduction reaction that is performed using the first plating tank is performed in a shading environment, and the electroless plating process performed by only the substitution reaction using the second plating tank is performed in a non-shading environment. | 02-03-2011 |
20110101541 | SEMICONDUCTOR DEVICE - A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device | 05-05-2011 |
20120100715 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE - The present invention provides a semiconductor device including at least one of an insulating layer and a semiconductor layer each including a hole formed therein, and a through electrode provided in the hole. In the semiconductor device, the side wall of the hole is constituted of a first region from the opening of the hole to a predetermined position between the opening of the hole and the bottom surface of the hole, and a second region from the predetermined position to the bottom surface of the hole. The through electrode includes a seed layer and a plating layer. The seed layer covers the second region and the bottom surface of the hole without covering the first region. In addition, the plating layer covers the seed layer and at least a part of the first region. | 04-26-2012 |
20120211872 | SEMICONDUCTOR DEVICE - A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device | 08-23-2012 |
20120248602 | SEMICONDUCTOR DEVICE - In this semiconductor device, the through-hole is formed in the substrate, and is located under the conductive pattern. The insulating layer is located at the bottom surface of the through-hole. The conductive pattern is located on one surface side of the substrate. The opening pattern is formed in the insulating layer which is located between the through-hole and the conductive pattern, where the distance r | 10-04-2012 |
20130234295 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME, WIRING BOARD AND METHOD OF MANUFACTURING SAME, SEMICONDUCTOR PACKAGE, AND ELECTRONIC DEVICE - Passivation films | 09-12-2013 |
20140231669 | MICROWAVE ION SOURCE AND METHOD FOR STARTING SAME - A microwave ion source includes a plasma chamber, a magnetic field generator that generates a magnetic field in the plasma chamber, and a control unit that controls the magnetic field generator to apply an initial magnetic field for plasma ignition to the plasma chamber and change the initial magnetic field to a normal magnetic field after the plasma ignition. The plasma chamber may have a vacuum window that receives a microwave, and an ion extraction opening. The initial magnetic field may have a flat magnetic field distribution from the vacuum window to the ion extraction opening. | 08-21-2014 |