Patent application number | Description | Published |
20090104528 | Electrode for Lithium Secondary Battery, Lithium Secondary Battery and Method for Producing the Same - An electrode for a lithium secondary battery including a sheet-like current collector and an active material layer carried on the current collector. The active material layer is capable of absorbing and desorbing lithium, and the active material layer includes a plurality of columnar particles having at least one bend. An angle θ | 04-23-2009 |
20110148284 | LIGHT-EMITTING DIODE ELEMENT AND METHOD FOR FABRICATING THE SAME - A substrate for semiconductor device includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate and an AlN layer formed on the amorphous carbon layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate. | 06-23-2011 |
20110174626 | SUBSTRATE AND METHOD FOR FABRICATING THE SAME - A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate. | 07-21-2011 |
20110203651 | SOLAR CELL AND METHOD FOR FABRICATING THE SAME - A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate. | 08-25-2011 |
20110298006 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor light emitting device includes a nitride semiconductor layer including a first cladding layer, an active layer, and a second cladding layer, and a current blocking layer configured to selectively inject a current into the active layer. The second cladding layer has a stripe-shaped ridge portion. The current blocking layer is formed in regions on both sides of the ridge portion, and is made of zinc oxide having a crystalline structure. | 12-08-2011 |
20120027919 | ELECTRODE FOR LITHIUM SECONDARY BATTERY, LITHIUM SECONDARY BATTERY AND METHOD FOR PRODUCING THE SAME - An electrode for a lithium secondary battery including a sheet-like current collector and an active material layer carried on the current collector. The active material layer is capable of absorbing and desorbing lithium, and the active material layer includes a plurality of columnar particles having at least one bend. An angle θ | 02-02-2012 |
20120043524 | LIGHT-EMITTING DIODE - An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer. | 02-23-2012 |
20120104354 | LIGHT-EMITTING DIODE - A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm. | 05-03-2012 |
20120211073 | SOLAR CELL - A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode. | 08-23-2012 |
20120273038 | SOLAR CELL AND METHOD FOR FABRICATING THE SAME - A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate. | 11-01-2012 |
20120305401 | SUBSTRATE AND METHOD FOR FABRICATING THE SAME - A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate. | 12-06-2012 |
20140071683 | WAVELENGTH CONVERSION ELEMENT, METHOD OF MANUFACTURING THE SAME, AND LED ELEMENT AND SEMICONDUCTOR LASER LIGHT EMITTING DEVICE USING WAVELENGTH CONVERSION ELEMENT - A wavelength conversion element disclosed in the present application includes a phosphor layer including a plurality of phosphor particles and a matrix that is located among the plurality of phosphor particles and is formed of zinc oxide. The zinc oxide is columnar crystals or a single crystal in a c-axis orientation. | 03-13-2014 |
20140072812 | WAVELENGTH CONVERSION ELEMENT INCLUDING PHOSPHOR PARTICLES, AND LED ELEMENT AND SEMICONDUCTOR LASER LIGHT EMITTING DEVICE USING WAVELENGTH CONVERSION ELEMENT - A wavelength conversion element includes: a plurality of phosphor particles; a first matrix located among a part of the plurality of phosphor particles and formed of zinc oxide in a c-axis orientation; and a second matrix located among a remaining part of the plurality of phosphor particles and formed of a material having a refractive index that is lower than a refractive index of the zinc oxide. | 03-13-2014 |
20140353702 | WAVELENGTH CONVERSION ELEMENT, LIGHT EMITTING DEVICE INCLUDING WAVELENGTH CONVERSION ELEMENT, AND VEHICLE INCLUDING LIGHT EMITTING DEVICE - A wavelength conversion element includes a phosphor layer including phosphor particles configured to be excited by light from a light source and a matrix located among the phosphor particles; and a column-shaped structural body including at least two kinds of column-shaped bodies periodically arranged and in contact with the phosphor layer. The column-shaped bodies have different heights and/or different thicknesses. The column-shaped structural body is a photonic crystal. | 12-04-2014 |