| Patent application number | Description | Published |
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| 20100164055 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND WAFER - A deep isolation trench extending from the main surface of a substrate to a desired depth is formed on the substrate with an insulating film in buried in it to form a through isolation portion. Subsequently, after a MOSFET is formed on the main surface of the substrate, an interlayer insulating film is deposited on the main surface of the substrate. Then, a deep conduction trench extending from the upper surface of the interlayer insulating film to a depth within the thickness of the substrate is formed in a region surrounded by the through isolation potion. Subsequently, a conductive film is buried in the deep conduction trench to form through interconnect portion. Then, after the undersurface of the substrate is ground and polished to an extent not to expose the through isolation portion and the through interconnect portion, wet etching is performed to an extent to expose parts of the lower portion of each of the through isolation portion and the through interconnect portion. | 07-01-2010 |
| 20100167495 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND WAFER - A deep isolation trench extending from the main surface of a substrate to a desired depth is formed on the substrate with an insulating film in buried in it to form a through isolation portion. Subsequently, after a MOSFET is formed on the main surface of the substrate, an interlayer insulating film is deposited on the main surface of the substrate. Then, a deep conduction trench extending from the upper surface of the interlayer insulating film to a depth within the thickness of the substrate is formed in a region surrounded by the through isolation potion. Subsequently, a conductive film is buried in the deep conduction trench to form through interconnect portion. Then, after the undersurface of the substrate is ground and polished to an extent not to expose the through isolation portion and the through interconnect portion, wet etching is performed to an extent to expose parts of the lower portion of each of the through isolation portion and the through interconnect portion. | 07-01-2010 |
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| 20090160050 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND WAFER - A deep isolation trench extending from the main surface of a substrate to a desired depth is formed on the substrate with an insulating film in buried in it to form a through isolation portion. Subsequently, after a MOSFET is formed on the main surface of the substrate, an interlayer insulating film is deposited on the main surface of the substrate. Then, a deep conduction trench extending from the upper surface of the interlayer insulating film to a depth within the thickness of the substrate is formed in a region surrounded by the through isolation portion. Subsequently, a conductive film is buried in the deep conduction trench to form through interconnect portion. Then, after the undersurface of the substrate is ground and polished to an extent not to expose the through isolation portion and the through interconnect portion, wet etching is performed to an extent to expose parts of the lower portion of each of the through isolation portion and the through interconnect portion. | 06-25-2009 |
| 20090174080 | SEMICONDUCTOR DEVICE - In order to improve the manufacturing yield of a semiconductor device having a three-dimensional structure in which a plurality of chips are stacked and attached to each other, the opening shape of each of conductive grooves ( | 07-09-2009 |
| 20100015797 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - When a tungsten film ( | 01-21-2010 |
| 20100090307 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A structure obtaining a desired integrated circuit by sticking together a plurality of semiconductor substrates and electrically connecting integrated circuits formed on semiconductor chips of the respective semiconductor substrates is provided, and a penetrating electrode penetrating between a main surface and a rear surface of each of the semiconductor substrates and a penetrating separation portion separating the penetrating electrode are separately arranged. Thereby, after forming an insulation trench portion for formation of the penetrating separation portion on the semiconductor substrate, a MIS·FET is formed, and then, a conductive trench portion for formation of the penetrating electrode can be formed. Therefore, element characteristics of a semiconductor device having a three-dimensional structure can be improved. | 04-15-2010 |
| Patent application number | Description | Published |
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| 20090057890 | SEMICONDUCTOR DEVICE - In this semiconductor device, connection parts between wafers are electrically insulated from each other, and a junction face shape of second electrical signal connection parts is larger than the shape of a positioning margin face that is formed by an outer shape when the periphery of a minimum junction face, which has half the area of a junction area of the first electrical signal connection part, is enclosed by a same width dimension as a positioning margin dimension between the first wafer and the second wafer. | 03-05-2009 |
| 20090206469 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device has a plurality of wafers which are laminated to each other, wherein: each wafer includes an lamination surface to which another wafer is laminated and a substrate having an element formed thereon; the lamination surface is provided with an electric signal connecting portion that electrically connects to said another wafer so as to form a semiconductor circuit; at least one of the electrical signal connecting portions facing each other is a protruding connection portion that protrudes from a region which exposes the substrate on the lamination surface; and a reinforcing protruding portion that is insulated from the semiconductor circuit, and is formed of the same material as the substrate to protrude from the lamination surface with a height equal to the length of a gap between the lamination surfaces of wafers facing each other is provided in an area where the protruding connection portion is not disposed on the lamination surface formed with the protruding connection portion. | 08-20-2009 |
| 20090206477 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device has a plurality of wafers which are laminated to each other, wherein: each wafer comprises an lamination surface to which another wafer is laminated; the lamination surface is provided with an electric signal connecting portion that electrically connects to said another surface so as to form a semiconductor circuit; at least one of the electrical signal connecting portions facing each other is a protruding connection portion that protrudes from the lamination surface; and a reinforcing protruding portion that is insulated from the semiconductor circuit and is provided in an area where the protruding connection portion is not disposed on the lamination surface formed with the protruding connection portion so as to protrude from the lamination surface with a height equal to or larger than that of the protruding connection portion. | 08-20-2009 |
