Patent application number | Description | Published |
20090205565 | APPARATUS FOR MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE - The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide. | 08-20-2009 |
20100295059 | SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRYSTAL SUBSTRATE - The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm | 11-25-2010 |
20140319539 | SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND SEMICONDUCTOR WAFER - A method for manufacturing a semiconductor wafer includes a carbon layer formation step, a through hole formation step, a feed layer formation step, and an epitaxial layer formation step. In the carbon layer formation step, a carbon layer ( | 10-30-2014 |
Patent application number | Description | Published |
20080302981 | Light-transmitting electromagnetic wave-shielding material - The present invention provides a light-transmitting electromagnetic wave-shielding material for use in displays or in-vehicle panels each having a polarizing plate or a retardation plate, wherein the light-transmitting electromagnetic wave-shielding material undergoes no generation of light interference fringes and is satisfactory in visibility even through sunglasses, goggles, glare-proof panels or glare-proof window materials having polarizing capability. By using unstretched light-transmitting organic polymer materials low in molecular orientation or small in molecular orientation unevenness as the base substrate of an electromagnetic wave-shielding layer, the light-transmitting electromagnetic wave-shielding material excellent in light interference fringe prevention capability can be obtained. | 12-11-2008 |
20100080956 | Low resistivity single crystal silicon carbide wafer - The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less. | 04-01-2010 |
20100147578 | LIGHT-TRANSMITTING ELECTROMAGNETIC-SHIELDING LAMINATE AND METHOD FOR PRODUCING THE SAME, LIGHT-TRANSMITTING RADIO WAVE ABSORBER, AND ADHESIVE COMPOSITION - Disclosed is a light-transmitting electromagnetic-shielding laminate, which is characterized in that two or more layers including an electromagnetic-shielding layer are arranged in layers using a (meth)acrylate adhesive composition which contains a (meth)acrylate monomer, a (meth)acrylate oligomer and at least one member selected from the group consisting of acrylic amide derivatives, silane compounds and organophosphorus compounds. Also disclosed is a light-transmitting radio wave absorber which is characterized in that a resistive layer, a dielectric spacer and a reflective layer are arranged in layers using a (meth)acrylate adhesive composition which contains a (meth)acrylate monomer, a (meth)acrylate oligomer and at least one member selected from the group consisting of acrylic amide derivatives, silane compounds and organophosphorus compounds. | 06-17-2010 |
Patent application number | Description | Published |
20080220232 | Silicon Carbide Single Crystal, Silicon Carbide Single Crystal Wafer, and Method of Production of Same - The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1×10 | 09-11-2008 |
20100083897 | Seed crystal consisting of silicon carbide single crysatal and method for producing ingot using the same - The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a <0001> direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application. | 04-08-2010 |
20100089311 | Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the same - The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a <0001> direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application. | 04-15-2010 |