Patent application number | Description | Published |
20100124229 | FORWARDING PACKETS USING NEXT-HOP INFORMATION - A method may include receiving a packet associated with a flow of packets, the packet including a destination address; selecting one of a plurality of memory banks, the selected memory bank being associated with the flow of packets, wherein each of the plurality of memory banks stores the same next-hop information for forwarding the packet to the destination address; accessing, in the selected memory bank, the next-hop information for forwarding the packet to the destination address; and forwarding the packet to the destination address based on the next-hop information. | 05-20-2010 |
20100175715 | Combinatorial Approach to the Development of Cleaning Formulations For Wet Removal of High Dose Implant Photoresist - Embodiments of the current invention describe a cleaning solution for the removal of high dose implanted photoresist, along with methods of applying the cleaning solution to remove the high dose implanted photoresist and combinatorially developing the cleaning solution. | 07-15-2010 |
20100288725 | Acid Chemistries and Methodologies for Texturing Transparent Conductive Oxide Materials - Surface texturing of the transparent conductive oxide (TCO) front contact of a thin film photovoltaic (TFPV) solar cell is needed to enhance the light-trapping capability of the TFPV solar cells and thus improving the solar cell efficiency. Embodiments of the current invention describe chemical formulations and methods for the wet etching of the TCO. The formulations and methods may be optimized to tune the surface texturing of the TCO as desired. | 11-18-2010 |
20110020971 | Combinatorial Screening of Transparent Conductive Oxide Materials for Solar Applications - Embodiments of the current invention include methods of improving a process of forming a textured TCO film by combinatorial methods. The combinatorial method may include depositing a TCO by physical vapor deposition or sputtering, annealing the TCO, and etching the TCO where at least one of the depositing, the annealing, or the etching is performed combinatorially. Embodiments of the current invention also include improved methods of forming the TCO based on the results of combinatorial testing. | 01-27-2011 |
20110151105 | High-Throughput Combinatorial Dip-Coating Apparatus and Methodologies - Embodiments of the current invention describe a high performance combinatorial method and apparatus for the combinatorial development of coatings by a dip-coating process. The dip-coating process may be used for multiple applications, including forming coatings from varied sol-gel formulations, coating substrates uniformly with particles to combinatorially test particle removal formulations, and the dipping of substrates into texturing formulations to combinatorially develop the texturing formulations. | 06-23-2011 |
20110164872 | FAST CONVERGENCE ON CHILD LINK FAILURES AND WEIGHTED LOAD BALANCING OF AGGREGATE ETHERNET/SONET BUNDLES - A network device provides a selector list that includes indices of child nexthops associated with the network device, where each of the child nexthops is associated with a corresponding child link provided in an aggregated bundle of child links. The network device also receives an indication of a failure of a child link in the aggregated bundle of child links, and removes, from the selector list, an index of a child nexthop associated with the failed child link. The network device further receives probabilities associated with the child links of the aggregated bundle of child links. Each of the probabilities indicates a probability of a packet exiting the network device on a child link. The network device also creates a distribution table based on the probabilities associated with the child links, and rearranges values provided in the distribution table. | 07-07-2011 |
20110194557 | DATA STRUCTURE-LESS DISTRIBUTED FABRIC MULTICAST - A network device receives a packet with a multicast nexthop identifier, and creates a mask that includes addresses of egress packet forwarding engines, of the network device, to which to provide the packet. The network device divides the mask into two portions, generates two copies of the packet, provides a first portion of the mask in a first copy of the packet, and provides a second portion of the mask in a second copy of the packet. The network device also forwards the first copy of the packet to an address of a first egress packet forwarding engine provided in the first portion of the mask, and forwards the second copy of the packet to an address of a second egress packet forwarding engine provided in the second portion of the mask. | 08-11-2011 |
20110199853 | Combinatorial Processing Including Stirring - Combinatorial processing including stirring is described, including defining multiple regions of a substrate, processing the multiple regions of the substrate in a combinatorial manner, introducing a fluid into a first aperture at a first end of a body to dispense the fluid out of a second aperture at a second end of the body and into one of the multiple regions, and agitating the fluid using an impeller at a second end of the body to facilitate interaction of the fluid with a surface of the substrate. | 08-18-2011 |
20110201149 | METHODS FOR FORMING RESISTIVE SWITCHING MEMORY ELEMENTS - Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication. | 08-18-2011 |
20110228793 | CUSTOMIZED CLASSIFICATION OF HOST BOUND TRAFFIC - A network device component receives traffic, determines whether the traffic is host bound traffic or non-host bound traffic, and classifies, based on a user-defined classification scheme, the traffic when the traffic is host bound traffic. The network device component also assigns, based on the classification, the classified host bound traffic to a queue associated with network device component for forwarding the classified host bound traffic to a host component of the network device. | 09-22-2011 |
20110268115 | MULTICAST OVER LAG AND IRB IN A ROUTING DEVICE - Techniques for handling multicast over link aggregated (LAG) interfaces and integrated routing and bridging (IRB) interfaces in a network device are described in which interfaces, at which a data unit is to be transmitted, may be represented hierarchically in which the LAG interfaces and IRB interfaces are represented as pointers. In one implementation, a device may determine routes for data units, where a route for a multicast data unit is represented as a set of interfaces of the device at which the data unit is to be output. Entries in the set of interfaces may include physical interfaces of the device and pointers to LAG interfaces or pointers to the IRB interfaces. The device may generate tokens to represent routes for data units and resolve the pointers to the LAG interfaces or the IRB interfaces to obtain physical interfaces of the router corresponding to a LAG or an IRB. | 11-03-2011 |
20110280245 | NEXT HOP CHAINING FOR FORWARDING DATA IN A NETWORK SWITCHING DEVICE - A route for a data unit through a network may be defined based on a number of next hops. Exemplary embodiments described herein may implement a router forwarding table as a chained list of references to next hops. In one implementation, a device includes a forwarding table that includes: a first table configured to store, for each of a plurality of routes for data units in a network, a chain of links to next hops for the routes; and a second table configured to store the next hops. The device also includes a forwarding engine configured to assemble the next hops for the data units based on using the chain of links in the first table to retrieve the next hops in the second table and to forward the data units in the network based on the assembled next hops. | 11-17-2011 |
20120001320 | SUBSTRATE PROCESSING INCLUDING A MASKING LAYER - Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer. | 01-05-2012 |
20120074376 | NONVOLATILE MEMORY ELEMENTS WITH METAL DEFICIENT RESISTIVE SWITCHING METAL OXIDES - Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal. | 03-29-2012 |
20120156498 | High-Throughput Combinatorial Dip-Coating Apparatus and Methodologies - Embodiments of the current invention describe a high performance combinatorial method and apparatus for the combinatorial development of coatings by a dip-coating process. The dip-coating process may be used for multiple applications, including forming coatings from varied sol-gel formulations, coating substrates uniformly with particles to combinatorially test particle removal formulations, and the dipping of substrates into texturing formulations to combinatorially develop the texturing formulations. | 06-21-2012 |
20120196397 | Methods of Building Crystalline Silicon Solar Cells For Use In Combinatorial Screening - Embodiments of the current invention describe methods of forming different types of crystalline silicon based solar cells that can be combinatorially varied and evaluated. Examples of these different types of solar cells include front and back contact silicon based solar cells, all-back contact solar cells and selective emitter solar cells. These methodologies all incorporate the formation of site-isolated regions using a combinatorial processing tool and the use of these site-isolated regions to form the solar cell area. Therefore, multiple solar cells may be rapidly formed on a single crystalline silicon substrate for use in combinatorial methodologies. Any of the individual processes of the methods described may be varied combinatorially to test varied process conditions or materials. | 08-02-2012 |
20120237676 | SOL-GEL BASED FORMULATIONS AND METHODS FOR PREPARATION OF HYDROPHOBIC ULTRA LOW REFRACTIVE INDEX ANTI-REFLECTIVE COATINGS ON GLASS - Embodiments of the invention relate generally to methods and compositions for forming porous low refractive index coatings on substrates. In one embodiment, a method of forming a porous coating on a substrate is provided. The method comprises coating a substrate with a sol-gel composition comprising at least one self assembling molecular porogen and annealing the coated substrate to remove the at least one self assembling molecular porogen to form the porous coating. Use of the self assembling molecular porogens leads to the formation of stable pores with larger volume and an increased reduction in the refractive index of the coating. Further, the size and interconnectivity of the pores may be controlled via selection of the self assembling molecular porogens structure, the total porogen fraction, polarity of the molecule and solvent, and other physiochemical properties of the gel phase. | 09-20-2012 |
20120251718 | SOL-GEL TRANSITION CONTROL OF COATINGS BY ADDITION OF SOLIDIFIERS FOR CONFORMAL COATINGS ON TEXTURED GLASS - Embodiments of the invention generally relate to methods and compositions for forming conformal coatings on textured substrates. More specifically, embodiments of the invention generally relate to sol-gel processes and sol-gel compositions for forming low refractive index conformal coatings on textured transparent substrates. In one embodiment a method of forming a conformal coating on a textured glass substrate is provided. The method comprises coating the textured glass substrate with a sol-gel composition comprising a solidifier. It is believed that use of the solidifier expedites the sol-gel transition point of the sol-gel composition leading to more conformal deposition of coatings on textured substrates. | 10-04-2012 |
20120300674 | FAST CONVERGENCE ON CHILD LINK FAILURES AND WEIGHTED LOAD BALANCING OF AGGREGATE ETHERNET/SONET BUNDLES - A network device provides a selector list that includes indices of child nexthops associated with the network device, where each of the child nexthops is associated with a corresponding child link provided in an aggregated bundle of child links. The network device also receives an indication of a failure of a child link in the aggregated bundle of child links, and removes, from the selector list, an index of a child nexthop associated with the failed child link. The network device further receives probabilities associated with the child links of the aggregated bundle of child links. Each of the probabilities indicates a probability of a packet exiting the network device on a child link. The network device also creates a distribution table based on the probabilities associated with the child links, and rearranges values provided in the distribution table. | 11-29-2012 |
20130034653 | ANTIREFLECTIVE SILICA COATINGS BASED ON SOL-GEL TECHNIQUE WITH CONTROLLABLE PORE SIZE, DENSITY, AND DISTRIBUTION BY MANIPULATION OF INTER-PARTICLE INTERACTIONS USING PRE-FUNCTIONALIZED PARTICLES AND ADDITIVES - Methods and compositions for forming durable porous low refractive index coatings on substrates are provided. In one embodiment, a method of forming a porous coating on a substrate is provided. The method comprises coating a substrate with a sol-formulation comprising a silane-based binder, silica-based nanoparticles, and an inter-particle interaction modifier for regulating interactions between the silica-based nanoparticles and annealing the coated substrate. Porous coatings formed according to the embodiments described herein demonstrate good optical properties (e.g., a low refractive index) while maintaining good mechanical durability due to the presence of the inter-particle interaction modifier. The inter-particle interaction modifier increases the strength of the particle network countering capillary forces produced during drying to maintain the porosity structure. | 02-07-2013 |
20130034722 | SOL-GEL BASED ANTIREFLECTIVE COATINGS USING PARTICLE-BINDER APPROACH WITH HIGH DURABILITY, MOISTURE RESISTANCE, CLOSED PORE STRUCTURE AND CONTROLLABLE PORE SIZE - Durable porous low refractive index coatings, methods and compositions for forming the porous low refractive index coatings are provided. The method comprises coating a substrate with a sol formulation comprising a silane-based binder having one or more reactive groups and silica based nanoparticles and annealing the coated substrate. The silane-based binder comprises from about 30 wt. % to about 70 wt. % ash contribution in the total ash content of the sol formulation. Porous coatings formed according to the embodiments described herein demonstrate good optical properties (e.g., a low refractive index) while maintaining good mechanical durability due to the presence of a high amount of binder and a closed pore structure. | 02-07-2013 |
20130071982 | Nonvolatile Memory Elements with Metal-Deficient Resistive-Switching Metal Oxides - Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal. | 03-21-2013 |
20130156032 | DATA STRUCTURE-LESS DISTRIBUTED FABRIC MULTICAST - A network device receives a packet with a multicast nexthop identifier, and creates a mask that includes addresses of egress packet forwarding engines, of the network device, to which to provide the packet. The network device divides the mask into two portions, generates two copies of the packet, provides a first portion of the mask in a first copy of the packet, and provides a second portion of the mask in a second copy of the packet. The network device also forwards the first copy of the packet to an address of a first egress packet forwarding engine provided in the first portion of the mask, and forwards the second copy of the packet to an address of a second egress packet forwarding engine provided in the second portion of the mask. | 06-20-2013 |
20130217238 | Substrate Processing Including A Masking Layer - Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer. | 08-22-2013 |
20130260508 | Methods for forming resistive switching memory elements - Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication. | 10-03-2013 |
20130329603 | NEXT HOP CHAINING FOR FORWARDING DATA IN A NETWORK SWITCHING DEVICE - A route for a data unit through a network may be defined based on a number of next hops. Exemplary embodiments described herein may implement a router forwarding table as a chained list of references to next hops. In one implementation, a device includes a forwarding table that includes: a first table configured to store, for each of a plurality of routes for data units in a network, a chain of links to next hops for the routes; and a second table configured to store the next hops. The device also includes a forwarding engine configured to assemble the next hops for the data units based on using the chain of links in the first table to retrieve the next hops in the second table and to forward the data units in the network based on the assembled next hops. | 12-12-2013 |
20130338305 | Methods for Coating a Substrate with an Amphiphilic Compound - Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process. | 12-19-2013 |
20130340805 | Methods of Building Crystalline Silicon Solar Cells for Use in Combinatorial Screening - Embodiments of the current invention describe methods of forming different types of crystalline silicon based solar cells that can be combinatorially varied and evaluated. Examples of these different types of solar cells include front and back contact silicon based solar cells, all-back contact solar cells and selective emitter solar cells. These methodologies all incorporate the formation of site-isolated regions using a combinatorial processing tool and the use of these site-isolated regions to form the solar cell area. Therefore, multiple solar cells may be rapidly formed on a single crystalline silicon substrate for use in combinatorial methodologies. Any of the individual processes of the methods described may be varied combinatorially to test varied process conditions or materials. | 12-26-2013 |
20140231704 | Silicon Texturing Formulations - The present disclosure includes a texture formulation that includes an aliphatic diol, an alkaline compound and water which provides a consistent textured region across a silicon surface suitable for solar cell applications. The current invention describes silicon texturing formulations that include at least one high boiling point additive. The high boiling point additive may be a derivative compound of propylene glycol or a derivative compound of ethylene glycol. Processes for texturing a crystalline silicon substrate using these formulations are also described. Additionally, a combinatorial method of optimizing the textured surface of a crystalline silicon substrate is described. | 08-21-2014 |
20140231744 | Methods for forming resistive switching memory elements - Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication. | 08-21-2014 |