Patent application number | Description | Published |
20110051508 | MULTILEVEL PROGRAMMING OF PHASE CHANGE MEMORY - A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined programming scheme to achieve a target resistance level of the PCM cell, wherein the programming scheme is operable to perform in a first programming mode one or more annealing steps to approach the target resistance, wherein the programming scheme is operable to perform in a second programming mode one or more melting steps, wherein the programming scheme is operable to start in the first programming mode and to switch to the second programming mode if the target resistance level of the PCM cell has been undershot in the first programming mode. | 03-03-2011 |
20110069539 | PROGRAMMING MULTI-LEVEL PHASE CHANGE MEMORY CELLS - A method and a feedback controller for programming at least one multi-level phase-change memory cell with a programming signal. The method and feedback controller include a sequence of write pulses applied to the multi-level phase change memory cell, wherein the feedback controller adjusts in real time at least one parameter of each write pulse as a function of a determined resistance error of the phase-change memory cell with respect to a desired reference resistance level. | 03-24-2011 |
20120230081 | CELL-STATE MEASUREMENT IN RESISTIVE MEMORY - Apparatus and method for measuring the state of a resistive memory cell. A bias voltage controller applies a bias voltage to the cell and controls the level of the bias voltage. A feedback signal generator senses cell current due to the bias voltage and generates a feedback signal (S | 09-13-2012 |
20120230097 | DETERMINING CELL-STATE IN PHASE-CHANGE MEMORY - A method, an apparatus, and a device for determining the state of a phase-change memory cell. The method includes the steps of: biasing a cell with a time-varying read voltage (V | 09-13-2012 |
20120230098 | PROGRAMMING OF PHASE-CHANGE MEMORY CELLS - A method and apparatus for programming a phase-change memory cell. A bias voltage signal (V | 09-13-2012 |
20120254693 | ENCODING A DATA WORD FOR WRITING THE ENCODED DATA WORD IN A MULTI-LEVEL SOLID STATE MEMORY - A method for encoding a data word for writing an encoded data word in N cells of a solid state memory. Each of the N cells can be programmed in one of q nominal levels. The method includes encoding the data word as a codeword of a first codeword type having q symbol values or as a codeword of a second codeword type having (q-d) symbol values, d ε [1, . . . , q−1], depending on a state of the N cells. | 10-04-2012 |
20120307554 | DETERMINING CELL-STATE IN PHASE-CHANGE MEMORY - A method, an apparatus, and a device for determining the state of a phase-change memory cell. The method includes the steps of: biasing a cell with a time-varying read voltage (V | 12-06-2012 |
20120314481 | CELL-STATE MEASUREMENT IN RESISTIVE MEMORY - Apparatus and method for measuring the state of a resistive memory cell. A bias voltage controller applies a bias voltage to the cell and controls the level of the bias voltage. A feedback signal generator senses cell current due to the bias voltage and generates a feedback signal (S | 12-13-2012 |
20120324313 | ENCODING A DATA WORD FOR WRITING THE ENCODED DATA WORD IN A MULTI-LEVEL SOLID STATE MEMORY - A method for encoding a data word for writing an encoded data word in N cells of a solid state memory. Each of the N cells can be programmed in one of q nominal levels. The method includes encoding the data word as a codeword of a first codeword type having q symbol values or as a codeword of a second codeword type having (q-d) symbol values, d ε [1, . . . , q-1], depending on a state of the N cells. | 12-20-2012 |
20120327709 | PROGRAMMING OF PHASE-CHANGE MEMORY CELLS - A method and apparatus for programming a phase-change memory cell. A bias voltage signal (V | 12-27-2012 |
20130077394 | MULTILEVEL PROGRAMMING OF PHASE CHANGE MEMORY - A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined programming scheme to achieve a target resistance level of the PCM cell, wherein the programming scheme is operable to perform in a first programming mode one or more annealing steps to approach the target resistance, wherein the programming scheme is operable to perform in a second programming mode one or more melting steps, wherein the programming scheme is operable to start in the first programming mode and to switch to the second programming mode if the target resistance level of the PCM cell has been undershot in the first programming mode. | 03-28-2013 |
20130083594 | MULTILEVEL PROGRAMMING OF PHASE CHANGE MEMORY - A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined programming scheme to achieve a target resistance level of the PCM cell, wherein the programming scheme is operable to perform in a first programming mode one or more annealing steps to approach the target resistance, wherein the programming scheme is operable to perform in a second programming mode one or more melting steps, wherein the programming scheme is operable to start in the first programming mode and to switch to the second programming mode if the target resistance level of the PCM cell has been undershot in the first programming mode. | 04-04-2013 |