Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Niira
Koichiro Niira, Higashiomi-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090272423 | Multi-Junction Type Solar Cell Device - In a photoelectric conversion device, in a contact between a p-type semiconductor | 11-05-2009 |
| 20110135843 | Deposited Film Forming Device and Deposited Film Forming Method - In order to form a high-quality Si-based film at high speed, for example, a deposited film forming device according to one aspect of the present invention includes: a chamber; a first electrode arranged in the chamber; and a second electrode arranged in the chamber and spaced a certain distance from the first electrode. The second electrode includes first and second supplying parts. The first supplying part supplies a first material gas and generates hollow cathode discharge. The second supplying part supplies a second material gas higher in decomposition rate than the first material gas. | 06-09-2011 |
Koichiro Niira, Shiga JP
| Patent application number | Description | Published |
|---|---|---|
| 20090266396 | Polycrystalline Silicon Substrate, Method for Producing Same, Polycrystalline Silicon Ingot, Photoelectric Converter and Photoelectric Conversion Module - Disclosed is a polycrystalline silicon substrate having a region wherein concentrations of impurities contained therein satisfy the following relations: [Oi]≧2E17 [atoms/cm | 10-29-2009 |
| 20110000532 | Solar Cell Device and Method of Manufacturing Solar Cell Device - A high-efficiency solar cell device producible in a simplified manner, and a method of manufacturing the same are provided. An insulation layer is formed on the back surface side of a semiconductor substrate of a first conductivity type. Removing part of the insulation layer exposes part of the semiconductor substrate to form a plurality of first through holes. A first layer of the first conductivity type is formed on the insulation layer and on the part of the semiconductor substrate exposed in the plurality of first through holes, whereby first junction regions are formed. Removing part of the first layer and the insulation layer exposes part of the semiconductor substrate to form a plurality of second through holes. A second layer of an opposite conductivity type is formed on the first layer and on the part of the semiconductor substrate exposed in the plurality of second through holes, whereby second junction regions are formed. A first conductive section for connecting the first junction regions to each other is formed on the first layer. A second conductive section for connecting the second junction regions to each other is formed on the second layer. The first through holes and the second through holes are formed by irradiation with a laser beam. | 01-06-2011 |
Koichiro Niira, Higashiomi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090211635 | Photovoltaic Conversion Element and Manufacturing Method Therefor, and Photovoltaic Conversion Module Using Same - A photovoltaic conversion element includes a one conductivity-type crystalline Si semiconductor; an opposite conductivity-type semiconductor which is joined to the crystalline Si semiconductor to form a pn junction therebetween; an electrode provided on the opposite conductivity-type semiconductor; and a depletion region formed from the side of the one conductivity-type crystalline Si semiconductor to the side of the opposite conductivity-type semiconductor across the pn junction formed therebetween. The depletion region has a first depletion region located inside the crystalline Si semiconductor and under the electrode, and the first depletion region has an oxygen concentration of 1E18 [atoms/cm | 08-27-2009 |