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Ngai, US
Douglas Ngai, Amarillo, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20100243672 | METHOD AND DEVICE FOR PREVENTING LIQUID DISPENSATION FROM AN AEROSOL SPRAY CAN - An aerosol spray can is provided. The aerosol spray can includes but is not limited to a housing forming a storage chamber, an initial amount of chemical stored in a compressed liquid state within the storage chamber, a valve assembly attached to the housing, and an extension tube connected with the valve assembly at a first end and extending into the storage chamber at a second end. The initial amount of chemical forms a top surface. The general direction of the top surface is perpendicular to the direction of gravity. The valve assembly including a stem forming a central passage through which the chemical dispenses from the storage chamber. The second end of the extension tube remains a distance away from the top surface of the initial amount of chemical regardless of the position of the aerosol spray can. | 09-30-2010 |
Douglas Ngai, Amerillo, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20100243761 | METHOD AND DEVICE FOR PREVENTING LIQUID DISPENSATION FROM AN AEROSOL SPRAY CAN - An aerosol spray can is provided. The aerosol spray can includes but is not limited to a housing, an initial amount of a chemical within the housing in both liquid and gaseous states, a valve assembly attached to the housing, an extension tube connected with the valve assembly, and a flotation device connected with the extension tube. The chemical in a liquid state forms a top surface above which there is the chemical in a gaseous state. The extension tube is connected with the valve assembly at a first end and extends into the housing at a second end. The second end of the extension tube forms an opening. The flotation device floats on the chemical in a liquid state. | 09-30-2010 |
Francis M. Ngai, Louisville, CO US
| Patent application number | Description | Published |
|---|---|---|
| 20100234021 | Scanning Channels While a Device is Out of Service - A channel scanning order is dynamically created, modified, selectively ignored, or combinations thereof based on historical data, motion information, context information, alert message systems, network reselection, or combinations thereof. If a less preferred network has served a mobile device longer than a threshold amount of time, acquisition of the less preferred network is attempted before attempting acquisition of a more preferred network. | 09-16-2010 |
| 20110021197 | APPARATUS AND METHOD FOR FACILITATING TRANSFER TO A SECONDARY CELL - A method and apparatus facilitating access to a communication session for a client is provided. The method may comprise obtaining, by a wireless communications device (WCD), reverse link transmit power to a primary cell, detecting if the transmit power to the primary cell exceeds a first threshold, locating one or more secondary cells when the detected transmit power exceeds the first threshold, obtaining reverse link transmit power to the one or more located secondary cells, and initiating a session transfer to a secondary cell when the secondary cell estimated transmit power is less than the transmit power to the primary cell. | 01-27-2011 |
Hing On Ngai, Plano, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20090311966 | METHODS AND APPARATUS TO ANALYZE COMMUNICATION SYSTEM TRANSCEIVERS - Methods and apparatus to monitor communication system transceivers are disclosed. For example, the disclosed system may determine the number and locations of available cellular stations. An example method includes receiving a first message from a base station, receiving a second message from the base station, extracting a first parameter from the first message, extracting a second parameter different from first parameter from the second message, determining if the first message and the second message were received from the same base station based on the first parameter and the second parameter, and reporting that the first message and the second message were from the same base station if the first message and the second message were received from the same base station. Some implementations of the disclosed methods and apparatus enable pseudorandom number codes received over-the-air from base stations to be grouped by base station. | 12-17-2009 |
Kenneth Mon Ngai, Essex, VT US
| Patent application number | Description | Published |
|---|---|---|
| 20100042960 | Structure for Couple Noise Characterization Using a Single Oscillator - A design structure for a computer-aided design system for generating a functional design model of an integrated circuit design (having nets comprising wires) determines critical parameters for coupling noise between the wires of the nets and acceptable limits for the critical parameters. Further, methods herein include designing a ring oscillator to have stages, each of the stages measuring only one of the critical parameters. This ring oscillator is then included within an integrated circuit design and associated design structure. The embodiments herein produce an integrated circuit according to this integrated circuit design and operate the ring oscillator within the integrated circuit to measure the critical parameters of the integrated circuit and produce test results. These test results are output to determine whether the test results are within the acceptable limits. | 02-18-2010 |
| 20100042962 | Structure for Couple Noise Characterization Using a Single Oscillator - A design structure for a computer-aided design system for generating a functional design model of an integrated circuit design (having nets comprising wires) determines critical parameters for coupling noise between the wires of the nets and acceptable limits for the critical parameters. Further, methods herein include designing a ring oscillator to have stages, each of the stages measuring only one of the critical parameters. This ring oscillator is then included within an integrated circuit design and associated design structure. The embodiments herein produce an integrated circuit according to this integrated circuit design and operate the ring oscillator within the integrated circuit to measure the critical parameters of the integrated circuit and produce test results. These test results are output to determine whether the test results are within the acceptable limits. | 02-18-2010 |
Tat Ngai, Austin, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20100059797 | (110)-ORIENTED P-CHANNEL TRENCH MOSFET HAVING HIGH-K GATE DIELECTRIC - A method of forming a field effect transistor having a heavily doped p-type (110) semiconductor layer over a metal substrate starts with providing a heavily doped p-type (110) silicon layer, and forming a lightly doped p-type (110) silicon layer on the P heavily doped-type (110) silicon layer. The method also includes forming a p-channel MOSFET which has a channel region along a (110) crystalline plane in the lightly doped p-type (110) silicon layer to allow a current conduction in a <110> direction. The p-channel MOSFET also includes a gate dielectric layer having a high dielectric constant material lining the (110) crystalline plane. The method further includes forming a top conductor layer overlying the lightly doped p-type (110) silicon layer and a bottom conductor layer underlying the heavily doped p-type (110) silicon layer. A current conduction from the top conductor layer to the bottom conductor layer is characterized by a hole mobility along a <110> crystalline orientation and on a (110) crystalline plane. | 03-11-2010 |
| 20100078682 | POWER MOSFET HAVING A STRAINED CHANNEL IN A SEMICONDUCTOR HETEROSTRUCTURE ON METAL SUBSTRATE - A field effect transistor device having a strained semiconductor channel region overlying a heterostructure-semiconductor on a metal substrate includes a first semiconductor layer overlying a first metal layer. The first semiconductor layer has a first semiconductor material and a second semiconductor material in a relaxed heterostructure and is heavily doped. A second semiconductor layer overlies the first semiconductor layer and has a first semiconductor material and a second semiconductor material in a relaxed heterostructure. The second semiconductor layer is more lightly doped than the first semiconductor layer. A trench extends into the second semiconductor layer and a channel region has a strained layer of the first semiconductor material adjacent a trench sidewall. The strained channel region provides enhanced carrier mobility and improves performance of the field effect transistor. | 04-01-2010 |