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Ng, NJ
Charlene Ng, Scotch Plains, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20080220029 | Fast-dissolving/disintegrating film preparation having high proportion of active - The invention provides a fast-dissolving or fast-disintegrating film preparation having a high proportion (i.e., at least about 40%) of active agent(s) and related methods for its preparation. In one embodiment, the active agent is a pharmaceutical and the film comprises between about 10% and about 40% pullulan as a primary or sole water-soluble polymer. | 09-11-2008 |
Charlene Cheuk Ng, Scotch Plains, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20090324713 | SPRAY-ON, NON-WOVEN FABRIC SYSTEM AND MULTILAYER WOUND COVERINGS - The invention is directed to a spray-on, non-woven fabric system and multilayer wound coverings for promoting wound healing, where the fabric system includes a first spray-on composition including a non-volatile carrier for keeping the wound moist and a second spray-on composition for covering the first composition and protecting the wound which includes fibers, a volatile carrier, and a binding agent, and where the multilayer wound covering includes a first layer formed from the first spray-on composition and a second layer covering the first layer, the second layer formed from the second spray-on composition. | 12-31-2009 |
Charlene Cheuk Ling Ng, Scotch Plains, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20110311611 | WATER DISSOLVABLE ADHERENT ARTICLE FOR TOPICAL APPLICATION - An adherent article with a first substrate, soluble or dispersible in aqueous solutions, with a first and second side, and an aqueous-insoluble second substrate disposed on at least a portion of the second side of the first substrate, optionally, with an adhesive applied to at least a portion of the first side of the first substrate, and a release liner positioned over a portion of the first substrate or adhesive to cover and protect at least a portion of the adhesive. | 12-22-2011 |
Edward Ng, Belle Mead, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20110076626 | Positive-Working Photoimageable Bottom Antireflective Coating - The invention relates to a photoimageable antireflective coating composition capable of forming a pattern by development in an aqueous alkaline solution, comprising, (i) a polymer A soluble in a coating solvent and comprises a chromophore, a crosslinking moiety, and optionally a cleavable group which under acid or thermal conditions produces a functionality which aids in the solubility of the polymer in an aqueous alkaline solution and; (ii) at least one photoacid generator; (iii) a crosslinking agent; (iv) optionally, a thermal acid generator; (v) a polymer B which is soluble in an aqueous alkaline solution prior to development, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (vi) a coating solvent composition, and (vii) optionally, a quencher. The invention also relates to a process for imaging the antireflective coating. | 03-31-2011 |
Edward W. Ng, Belle Mead, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20100136477 | Photosensitive Composition - The present invention relates to a novel photosensitive composition comprising a) an organic polymer, b) a photobase generator of structure (1), and c) optionally a photoacid generator, | 06-03-2010 |
| 20110086312 | Positive-Working Photoimageable Bottom Antireflective Coating - The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent of structure (7), and optionally, a photoacid generator and/or an acid and/or a thermal acid generator, where structure (7) is | 04-14-2011 |
Hock Ng, Westfield, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20090139957 | Group III-Nitride layers with patterned surfaces - A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer. | 06-04-2009 |
Hock M. Ng, Westfield, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20110254914 | IMMERSIVE VIEWER, A METHOD OF PROVIDING SCENES ON A DISPLAY AND AN IMMERSIVE VIEWING SYSTEM - An apparatus, a method of providing scenes on a display and an immersive viewing system is disclosed. In one embodiment, the apparatus includes: (1) a movement detector configured to monitor movement of a user with respect to a display, wherein the movement detector is disengaged from the user and includes a distance sensor configured to detect a distance of the user from the display and (2) an active screen displayer configured to navigate an active scene on the display based on changes in the distance and dynamically provide an updated view of the active scene on the display based thereon. | 10-20-2011 |
Hock Min Ng, Westfield, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20080197358 | WIDE-BANDGAP SEMICONDUCTOR DEVICES | 08-21-2008 |
| 20100105197 | WIDE-BANDGAP SEMICONDUCTOR DEVICES | 04-29-2010 |
| 20100304516 | LIGHT-EMITTING CRYSTAL STRUCTURES - A method of manufacturing an apparatus, comprising forming a light-emitting crystalline structure. Forming the light-emitting crystalline structure includes forming a first barrier region on a substrate, the first barrier region having one or more inclined surfaces relative to a planar surface of the substrate. Forming the light-emitting crystalline structure also includes forming a second barrier region over the first barrier region, to form a junction at the inclined surfaces, wherein the first barrier region comprises one of an n-type or p-type semiconductor crystal, and the second barrier region comprises the other of the n-type or p-type semiconductor crystal. | 12-02-2010 |
Howard Ng, Summit, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20110319417 | METHODS AND COMPOSITIONS FOR TREATING ANXIETY - Methods of treating a TRPC5 mediated disorder in a subject by administering an effective amount of a TRPC5 antagonist, such as a compound disclosed herein, are described. | 12-29-2011 |
Howard Ng, Towaco, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20090216382 | Direct Load Control System and Method with Comfort Temperature Setting | 08-27-2009 |
Hung Ng, New Milford, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20080220581 | OPTO-THERMAL ANNEALING METHODS FOR FORMING METAL GATE AND FULLY SILICIDED GATE-FIELD EFFECT TRANSISTORS - An opto-thermal annealing method for forming a field effect transistor uses a reflective metal gate so that electrical properties of the metal gate and also interface between the metal gate and a gate dielectric are not compromised when opto-thermal annealing a source/drain region adjacent the metal gate. Another opto-thermal annealing method may be used for simultaneously opto-thermally annealing: (1) a silicon layer and a silicide forming metal layer to form a fully silicided gate; and (2) a source/drain region to form an annealed source/drain region. An additional opto-thermal annealing method may use a thermal insulator layer in conjunction with a thermal absorber layer to selectively opto-thermally anneal a silicon layer and a silicide forming metal layer to form a fully silicide gate. | 09-11-2008 |
Hung Y. Ng, New Milford, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20080283934 | SUBSTANTIALLY L-SHAPED SILICIDE FOR CONTACT AND RELATED METHOD - A structure, semiconductor device and method having a substantially L-shaped silicide element for a contact are disclosed. The substantially L-shaped silicide element, inter alia, reduces contact resistance and may allow increased density of CMOS circuits. In one embodiment, the structure includes a substantially L-shaped silicide element including a base member and an extended member, wherein the base member extends at least partially into a shallow trench isolation (STI) region such that a substantially horizontal surface of the base member directly contacts a substantially horizontal surface of the STI region; and a contact contacting the substantially L-shaped silicide element. The contact may include a notch region for mating with the base member and a portion of the extended member, which increases the silicide-to-contact area and reduces contact resistance. Substantially L-shaped silicide element may be formed about a source/drain region, which increases the silicon-to-silicide area, and reduces crowding and contact resistance. | 11-20-2008 |
| 20090039461 | FORMATION OF IMPROVED SOI SUBSTRATES USING BULK SEMICONDUCTOR WAFERS - The present invention relates to a semiconductor-on-insulator (SOI) substrate having one or more device regions. Each device region comprises at least a base semiconductor substrate layer and a semiconductor device layer with a buried insulator layer located therebetween, while the semiconductor device layer is supported by one or more vertical insulating pillars. The vertical insulating pillars each preferably has a ledge extending between the base semiconductor substrate layer and the semiconductor device layer. The SOI substrates of the present invention can be readily formed from a precursor substrate structure with a “floating” semiconductor device layer that is spaced apart from the base semiconductor substrate layer by an air gap and is supported by one or more vertical insulating pillars. The air gap is preferably formed by selective removal of a sacrificial layer located between the base semiconductor substrate layer and the semiconductor device layer. | 02-12-2009 |
| 20090242989 | COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE WITH EMBEDDED STRESSOR - In one embodiment, the invention is a complementary metal-oxide-semiconductor device with an embedded stressor. One embodiment of a field effect transistor includes a silicon on insulator channel, a gate electrode coupled to the silicon on insulator channel, and a stressor embedded in the silicon on insulator channel and spaced laterally from the gate electrode, where the stressor is formed of a silicon germanide alloy whose germanium content gradually increases in one direction. | 10-01-2009 |
| 20110147885 | FORMATION OF IMPROVED SOI SUBSTRATES USING BULK SEMICONDUCTOR WAFERS - The present invention relates to a semiconductor-on-insulator (SOI) substrate having one or more device regions. Each device region comprises at least a base semiconductor substrate layer and a semiconductor device layer with a buried insulator layer located therebetween, while the semiconductor device layer is supported by one or more vertical insulating pillars. The vertical insulating pillars each preferably has a ledge extending between the base semiconductor substrate layer and the semiconductor device layer. The SOI substrates of the present invention can be readily formed from a precursor substrate structure with a “floating” semiconductor device layer that is spaced apart from the base semiconductor substrate layer by an air gap and is supported by one or more vertical insulating pillars. The air gap is preferably formed by selective removal of a sacrificial layer located between the base semiconductor substrate layer and the semiconductor device layer. | 06-23-2011 |
Jenny Ng, Hoboken, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20090249234 | SYSTEM AND METHOD FOR EFFICIENTLY DISPLAYING SCORE INFORMATION RELATED TO ENTITIES - A system and method for graphically presenting profile data includes providing a plurality of fields on a display, each field representing a different trait. The fields are populated with a representative shape. Each shape represents a trait or sub trait where the shape represents a magnitude of the trait or sub trait. The traits and sub traits collectively provide an entity profile. Graphic modification to the representative shape permits a comparison with another entity profile with graphically depicted traits in accordance with the graphic modification. | 10-01-2009 |
Man Kit Ng, Annandale, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20100170829 | POLYALKYL SUCCINIC ANHYDRIDE DERIVATIVES AS ADDITIVES FOR FOULING MITIGATION IN PETROLEUM REFINERY PROCESSES - The present invention provides a method for reducing fouling, including particulate-induced fouling, in a hydrocarbon refining process including the steps of providing a crude hydrocarbon for a refining process; adding at least one polyalkyl succinic anhydride derivative additive disclosed herein. The additive can be complexed with a boronating agent, such as boric acid, to yield a boron-containing polyalkyl succinic anhydride derivative. | 07-08-2010 |
| 20110147275 | POLYALKYLENE EPOXY POLYAMINE ADDITIVES FOR FOULING MITIGATION IN HYDROCARBON REFINING PROCESSES - The present invention provides a method for reducing fouling, including particulate-induced fouling, in a hydrocarbon refining process including the steps of providing a crude hydrocarbon for a refining process and adding an antifouling agent containing a polymer base unit and a polyamine group to the crude hydrocarbon. The antifouling agent can be obtained by reacting an epoxidation reagent with a vinyl-terminated polymer, such as polypropylene or poly(ethylene-co-propylene), to form a terminal epoxy group, followed by reacting a polyamine with the epoxy group. | 06-23-2011 |
| 20110160107 | Lubricant Base Stocks Based on Block Copolymers and Processes For Making - Provided is a block copolymer having an “A” block of a functionalized hydrocarbon moiety including one or more functional end groups selected from the group consisting of: epoxides, amines, acids, acid chlorides, acid anhydrides, halogens, vinyl or vinylidene double bond, aromatic rings and thiols, and a “B” block of a functionalized polyether moiety including one or more functional end groups selected from the group consisting: epoxides, amines, acids, acid chlorides, acid anhydrides, halogens, vinyl or vinylidene double bond, aromatic rings and thiols. The end group of the polyether moiety is different than the end group of the hydrocarbon moiety, and the hydrocarbon moiety and the polyether moiety are copolymerizable therewith. Preferably, the hydrocarbon moiety is a poly-α-olefin and the polyether moiety is a polyalkylene glycol. | 06-30-2011 |
Shirley Mei-King Ng, Bridgewater, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20100273838 | STABLE TOPICAL COMPOSITIONS FOR 1,2,4-THIADIAZOLE DERIVATIVES - The present application provides a stable topical composition comprising a compound of 1,2,4-thiadiazole derivatives and the related thiourea derivatives. The stable topical composition may be present in various forms, including aqueous gel, cream, and emulsion. The stable topical composition may be stored at refrigerated or ambient condition for a reasonable shelf-life. The present application also provides a method of treating dermatologic disorders mediated by a melanocortin receptor using the stable topical composition. The stable composition may be delivered using a single chamber or dual chamber device. A method of preparing and delivering the stable composition is also provided. | 10-28-2010 |
Tony Ng, East Brunswick, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20100022980 | WRAPPER SEALING PROCESS AND ARTICLE - A process for overwrapping a catamenial device such as a tampon includes the steps of providing a substantially cylindrical overwrapper material, inserting a catamenial device into the overwrap material, and closing the open end of the overwrapper material. The overwrapper material has an open end, a closed end, and a first length. The catamenial device has a tapered insertion end, a longitudinal axis, and a length less than the first length, such that the open end of the overwrapper material extends beyond the insertion end of the inserted catamenial device. Concave clamping jaws are applied to the open end of the overwrapper material to urge it toward the longitudinal axis of the catamenial device; to conform portions of the overwrapper material to the insertion end of the catamenial device; and to fold overwrapper material between adjacent clamping jaws to form fins extending outwardly from the conformed portions. | 01-28-2010 |
Tony C. Ng, East Brunswick, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20090260205 | Methods of Packaging Intravaginal Device - A method of folding a plurality of flexible elements about a central fluid storage element includes of urging an intravaginal device into a folding device; imparting relative rotation between at least a portion of the folding device and the intravaginal device; and contacting the plurality of flexible extensions with the folding device. Wherein the intravaginal device includes a fluid storage element and a plurality of flexible extensions extending therefrom, and the flexible extensions are folded about the fluid storage element in a uniform direction. Alternatively, in place of relative rotation, the flexible extensions are folded by means of guide rails of the folding device. Several apparatus may be employed in this and related methods. | 10-22-2009 |
| 20100069866 | Intravaginal Device with Fluid Transport Plates And Methods of Making - An intravaginal device has a fluid storage element and at least one fluid transport element in fluid communication with the fluid storage element. The at least one fluid transport element has a first plate and a second plate coupled to the first plate. The second plate is capable of separating from the first plate sufficiently to provide inter-plate capillary action. The at least one fluid transport element is bendable about an axis substantially parallel to the longitudinal axis of the fluid storage element. The invention also includes methods and apparatus useful in the production of an intravaginal device. | 03-18-2010 |
| 20100168645 | INTRAVAGINAL DEVICE WITH FLUID TRANSPORT PLATES - An intravaginal device has a fluid storage element and at least one fluid transport element in fluid communication with the fluid storage element. The at least one fluid transport element has a first plate and a second plate coupled to the first plate. The second plate is capable of separating from the first plate sufficiently to provide inter-plate capillary action. The at least one fluid transport element is bendable about an axis substantially parallel to the longitudinal axis of the fluid storage element. | 07-01-2010 |
| 20100192339 | INTRAVAGINAL DEVICE WITH FLUID TRANSPORT PLATES - An intravaginal device has a fluid storage element and at least one fluid transport element in fluid communication with the fluid storage element. The at least one fluid transport element has a first plate and a second plate coupled to the first plate. The second plate is capable of separating from the first plate sufficiently to provide inter-plate capillary action. The at least one fluid transport element is bendable about an axis substantially parallel to the longitudinal axis of the fluid storage element. | 08-05-2010 |
| 20100194110 | KNOTTER - Apparatus for knotting at least one string of material has a fixed knotter plate, a primary knotter plate, a secondary knotter plate, means to apply tension to the string, and means for threading the string through the knotter plates. | 08-05-2010 |
Wai-Leung Ng, Lawrenceville, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20100273890 | IDENTIFICATION OF BACTERIAL AUTOINDUCER AND USE IN TREATING BACTERIAL PATHOGENICITY - A bacterial autoinducer, CAI-1, was purified and its structure identified. Methods for synthesis of the autoinducer and its analogues were elucidated. Methods of using the autoinducer or its analogues for treating bacterial pathogenicity and bio film formation are described. Methods for prevention and treatment of cholera are described. Synthetic (S)-3-hydroxytridecan-4-one functions as well as natural CAI-1 in repressing production of the virulence factor toxin co-regulated pilus (TCP). Strategies are described to manipulate bacterial quorum sensing in the clinical arena. | 10-28-2010 |
