| Patent application number | Description | Published |
|---|
| 20090035920 | PROCESS FOR FABRICATING A SUBSTRATE OF THE SILICON-ON-INSULATOR TYPE WITH REDUCED ROUGHNESS AND UNIFORM THICKNESS - A process for fabricating a silicon on insulator (SOI) substrate by co-implanting atomic or ionic species into a semiconductor donor substrate to form a weakened zone therein, the weakened zone forming a boundary between a thin silicon active layer and the remainder of the donor substrate. The donor substrate is then bonded to a semiconductor receiver substrate by molecular adhesion, resulting in a layer of buried silicon interposed between the donor substrate and the receiver substrate. The remainder of the donor substrate is detached along the weakened zone to obtain a SOI substrate with the receiver substrate covered with the buried oxide layer and the thin silicon active layer. The silicon active layer is then thermally annealed for at least 10 minutes in a gaseous atmosphere containing hydrogen, argon or both at a temperature of at least 950° C. but not exceeding 1100° C. The annealing step minimizes roughness of the surface of the silicon active layer, prevents reduction in thickness of the buried oxide layer, and achieves uniform thickness of the thin silicon active layer and the buried oxide layer. | 02-05-2009 |
| 20100052092 | METHOD FOR FABRICATING A SEMICONDUCTOR ON INSULATOR SUBSTRATE WITH REDUCED SECCO DEFECT DENSITY - The invention relates to a method for fabricating a semiconductor on insulator substrate, in particular a silicon on insulator substrate by providing a source substrate, providing a predetermined splitting area inside the source substrate by implanting atomic species, bonding the source substrate to a handle substrate, detaching a remainder of the source substrate from the source-handle component at the predetermined splitting area to thereby transfer a device layer of the source substrate onto the handle substrate, and thinning of the device layer. To obtain semiconductor on insulator substrates with a reduced Secco defect density of less than 100 per cm | 03-04-2010 |
| 20110097871 | Process for the transfer of a thin layer formed in a substrate with vacancy clusters - Methods for forming semiconductor structures comprising a layer transferred from a donor substrate are provided in which the resulting structure has improved quality with respect of defects, and resulting structures therefrom. For example, a semiconductor on insulator (SeOI) structure can be formed by a method comprising: —providing a donor substrate ( | 04-28-2011 |
| 20110097874 | PROGRESSIVE TRIMMING METHOD - The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming step carried out over a first depth that includes at least the thickness of the first wafer and over a first width determined from the edge of the first wafer. A second trimming step is then carried out over a second depth that includes at least the thickness of the first wafer and over a second width that is less than the first width. | 04-28-2011 |
| 20110117691 | MIXED TRIMMING METHOD - The invention relates to a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first step of trimming the edge of the first wafer by mechanical machining over a predetermined depth in the first wafer. This first trimming step is followed by a second step of non-mechanical trimming over at least the remaining thickness of the first wafer. | 05-19-2011 |
| 20110233720 | TREATMENT FOR BONDING INTERFACE STABILIZATION - A method and/or system are provided for producing a structure comprising a thin layer of semiconductor material on a substrate. The method includes creating an area of embrittlement in the thickness of a donor substrate, bonding the donor substrate with a support substrate and detaching the donor substrate at the level of the area of embrittlement to transfer a thin layer of the donor substrate onto the support substrate. The method also includes thermal treatment of this resulting structure to stabilize the bonding interface between the thin layer and the substrate support. The invention also relates to the structures obtained by such a process. | 09-29-2011 |
