Patent application number | Description | Published |
20110186829 | Surface Treated Substrates for Top Gate Organic Thin Film Transistors - A method of forming a top gate transistor comprising the steps of providing a substrate carrying source and drain electrodes defining a channel region therebetween; treating at least part of the surface of the channel region to reduce its polarity; and depositing a semiconductor layer in the channel. | 08-04-2011 |
20110186830 | Method of Making Organic Thin Film Transistors Using a Laser Induced Thermal Transfer Printing Process - The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ. | 08-04-2011 |
20110227048 | Organic Electroluminescent Device - An organic electroluminescent device comprising: a substrate; a first electrode disposed over the substrate for injecting charge of a first polarity; a second electrode disposed over the first electrode for injecting charge of a second polarity opposite to said first polarity; an organic electroluminescent layer disposed between the first and the second electrode; and a layer of polymer dispersed liquid crystals (PDLC), wherein said layer of PDLC does not have its own associated electrodes and drive circuitry forming a switchable PDLC cell. | 09-22-2011 |
20130168662 | Method of Forming a Semiconductor Device - Method for producing a semiconductor device such as an organic thin film transistor, and a device produced by the method, the method including the steps of forming conducting electrodes over a substrate, treating a surface of the electrodes with an arene substituted with an electron-withdrawing group to form an electrode contact layer over the electrodes, and forming an organic semiconductor layer over the substrate and electrodes, in which the substrate and electrodes are baked before the organic semiconductor layer is formed so as to reduce contaminants on the electrode contact layer and thereby promote improved crystal nucleation on a surface of the electrode. | 07-04-2013 |
20130284984 | SEMICONDUCTOR BLEND - The invention provides an ink comprising a blend of a polymer material and a small molecule semiconductor material dissolved or dispersed in a solvent, said blend comprising at least 70% by weight of said polymer material and wherein the ink concentration is at least 0.4% w/v. The polymer material is preferably TFB [9,9′-dioctylfluorene-co-N-(4-butylphenyl)-diphenylamine] | 10-31-2013 |
20140183516 | ELECTRONIC DEVICE - A method of fabricating an electronic device, such as an organic thin film transistor, is disclosed. A substrate, for example a silicate glass substrate, has a surface which supports at least one metallic electrode comprising at least one metal, for example gold, and at least a portion of the surface of the substrate is exposed. The method comprises selectively forming a self-assembled layer on the exposed portion of the substrate surface such that no self-assembled layer is formed on the at least one metallic electrode and applying a solution or other liquid which is repelled by the self-assembled layer to at least one metal electrode so as to selectively form a layer of further material, such as a charge injection promoting material, on the at least one metallic electrode. | 07-03-2014 |
20140353647 | Organic Thin Film Transistors And Method of Making Them - An organic thin film transistor comprises source and drain electrodes defining a channel between them; a surface-modification layer on at least part of the surface of each of the source and drain electrodes; an organic semiconductor layer extending across the channel and in contact with the surface-modification layers; a gate electrode; and a gate dielectric between the organic semiconductor layer and the gate dielectric. The surface-modification layers consist essentially of a partially fluorinated fullerene. | 12-04-2014 |
Patent application number | Description | Published |
20130149812 | LOW CONTACT RESISTANCE ORGANIC THIN FILM TRANSISTORS - The invention provides the use of a solvent selected from the group consisting of alkoxybenzenes and alkyl substituted alkoxybenzenes in reducing the contact resistance in an organic thin film transistor comprising a semiconductor layer comprising a blend of a small molecule semiconductor material and a polymer material that is deposited from a solution of said small molecule semiconductor material and said polymer material in said solvent and novel semiconductor blend formulations that are of particular use in preparing organic thin film transistors. Said solvents yield devices with lower absolute contact resistance, lower absolute channel resistance, and lower proportion of contact resistance to the total channel resistance. | 06-13-2013 |
20150188053 | METHOD FOR PREPARING A SEMICONDUCTING LAYER - A method for preparing a semiconducting layer of an organic electronic device comprising: (i) depositing said semiconducting layer from a solution comprising a polymeric semiconductor, a non-polymeric semiconductor, a first aromatic solvent and a second aromatic solvent, wherein said second aromatic solvent has a boiling point that is at least 15° C. higher than the boiling point of said first aromatic solvent; and (ii) heating said deposited layer to evaporate said solvent, wherein said first aromatic solvent is of formula (I): wherein R | 07-02-2015 |
20160035987 | ORGANIC SEMICONDUCTING BLEND - A blend for preparing a semiconducting layer an organic electronic device comprises a polymer, a first non-polymeric semiconductor, a second non-polymeric semiconductor and a third non-polymeric semiconductor. The blend enables higher concentration solutions of semiconductor and a broader solution processing window as compared to blends comprising one polymer and one non-polymeric semiconductor. For example, a blend comprising F8-TFB and three different substituted benzothiophene derivatives shows three-fold higher average saturation mobility in OTFTs as compared to a blend of one polymer and one of these benzo thiophene derivatives and consistent peak saturation mobilities after drying at 60° C., 80° C. and 100° C. even after a 2 minute delay. | 02-04-2016 |