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Neumayer
Christoph Alexander Neumayer, Bern CH
| Patent application number | Description | Published |
|---|---|---|
| 20110223282 | NUTRITIONAL COMPOSITION WITH ANTI-REGURGITATION PROPERTIES - A nutritional composition for the management of regurgitation in infants which composition includes which composition includes a protein source consisting essentially of partially hydrolysed proteins, a lipid source and a carbohydrate source comprising a starch selected from cereal starch or potato starch wherein the starch amounts to between 18 to 25% of the nutritional composition on a dry weight basis. | 09-15-2011 |
Deborah Neumayer, Danbury, CT US
| Patent application number | Description | Published |
|---|---|---|
| 20090278114 | CONTROL OF CARBON NANOTUBE DIAMETER USING CVD OR PECVD GROWTH - The diameter of carbon nanotubes grown by chemical vapor deposition is controlled independent of the catalyst size by controlling the residence time of reactive gases in the reactor. | 11-12-2009 |
Deborah A. Neumayer, Yorktown Heights, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20110074044 | PATTERNABLE LOW-K DIELECTRIC INTERCONNECT STRUCTURE WITH A GRADED CAP LAYER AND METHOD OF FABRICATION - An interconnect structure is provided that includes at least one patterned and cured low-k material located on a surface of a patterned graded cap layer. The at least one cured and patterned low-k material and the patterned graded cap layer each have conductively filled regions embedded therein. The patterned and cured low-k material is a cured product of a functionalized polymer, copolymer, or a blend including at least two of any combination of polymers and/or copolymers having one or more acid-sensitive imageable groups, and the graded cap layer includes a lower region that functions as a barrier region and an upper region that has antireflective properties of a permanent antireflective coating. | 03-31-2011 |
Deborah Ann Neumayer, Danbury, CT US
| Patent application number | Description | Published |
|---|---|---|
| 20080258194 | FLIP FERAM CELL AND METHOD TO FORM SAME - A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present invention includes separately forming a CMOS structure and a ferroelectric delivery wafer. These separate structures are then brought into contact with each and the ferroelectric film of the delivery wafer is bonded to the upper conductive electrode layer of the CMOS structure by using a low temperature anneal step. A portion of the delivery wafer is then removed providing an integrated FE/CMOS structure wherein the ferroelectric capacitor is formed on top of the CMOS structure. The capacitor is in contact with the transistor of the CMOS structure through all the wiring levels of the CMOS structure. | 10-23-2008 |
| 20080286494 | ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS - A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa. | 11-20-2008 |
| 20090239097 | Fabrication of Heterojunction Structures - A method is disclosed for preparing a surface of a Group III-Group V compound semiconductor for epitaxial deposition. The III-V semiconductor surface is treated with boron (B) at a temperature of between about 250° C. and about 350° C. A suitable form for supplying B for the surface treatment is diborane. The B treatment can be followed by epitaxial growth, for instance by a Group IV semiconductor, at temperatures similar to those of the B treatment. The method yields high quality heterojunction, suitable for fabricating a large variety of device structures. | 09-24-2009 |
| 20090304951 | ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS - A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than | 12-10-2009 |
Harald Neumayer, Vienna AT
| Patent application number | Description | Published |
|---|---|---|
| 20090001735 | Mechanism for Securing the Handle of a Door or Window - In a device for securing the handle or knob ( | 01-01-2009 |
| 20090013734 | Safety Mechanism for Locks - In a security device for locks comprising a grip portion or knob ( | 01-15-2009 |
| 20090275229 | DEVICE FOR ELECTRICAL CONNECTION OF ELECTRICAL OR ELECTRONIC COMPONENTS - In a device for the electrical connection of electrical or electronic components which are arranged on different sides of an electronic lock in pivotable or rotational operating members for the lock, which are connectable in a rotationally fast manner with a locking nose ( | 11-05-2009 |
Roland Neumayer, Linz Oesterreich AT
| Patent application number | Description | Published |
|---|---|---|
| 20110138779 | Determination of the Linear Correlation Between Signals, Which are Determined by Means of NOx Sensors, in an SCR Exhaust Gas Aftertreatment System - A measurement method is provided for an SCR exhaust gas aftertreatment system of a vehicle, where the SCR exhaust gas aftertreatment system includes a first NO | 06-16-2011 |
Wolfgang Neumayer, Wien AT
| Patent application number | Description | Published |
|---|---|---|
| 20100224047 | CHAINSAW - The invention relates to a chainsaw having chain links ( | 09-09-2010 |