Patent application number | Description | Published |
20090294653 | ION CONCENTRATION TRANSISTOR AND DUAL-MODE SENSORS - An ion concentration sensor produces a signal reflective of the ion concentration within a solution. The ion concentration sensor is based on an ion sensitive transistor having a solution input, a reference input, a diffusion input, and a diffusion output. The ion sensitive transistor is connected as a pass transistor, such that the diffusion output provides an electrical signal indicating an ion concentration in a solution contacting the solution input. | 12-03-2009 |
20110204231 | THERMAL DETECTION AND IMAGING OF ELECTROMAGNETIC RADIATION - The current invention provides a method for improving the sensitivity of bolometric detection by providing improved electromagnetic power/energy absorption. In addition to its role in significantly improving the performance of conventional conducting-film bolometric detection elements, the method suggests application of plasmon resonance absorption for efficient thermal detection and imaging of far-field radiation using the Surface Plasmon Resonance (SPR) and the herein introduced Cavity Plasmone Resonance (CPR) phenomena. The latter offers detection characteristics, including good frequency sensitivity, intrinsic spatial (angular) selectivity without focusing lenses, wide tunability over both infrared and visible light domains, high responsivity and miniaturization capabilities. As compared to SPR, the CPR-type devices offer an increased flexibility over wide ranges of wavelengths, bandwidths, and device dimensions. Both CPR and SPR occur in metallic films, which are characterized by high thermal diffusivity essential for fast bolometric response. | 08-25-2011 |
20110315880 | TERAMOS-TERAHERTZ THERMAL SENSOR AND FOCAL PLANE ARRAY - A TeraMOS sensor based on a CMOS-SOI-MEMS transistor, thermally isolated by the MEMS post-processing, designed specifically for the detection of THz radiation which may be directly integrated with the CMOS-SOI readout circuitry, in order to achieve a breakthrough in performance and cost. The TeraMOS sensor provides a low-cost, high performance THz passive or active imaging system (roughly in the range of 0.5-1.5 THz) by combining several leading technologies: Complementary Metal Oxide Semiconductor (CMOS)-Silicon on Insulator (SOI), Micro Electro Mechanical Systems (MEMS) and photonics. An array of TeraMOS sensors, integrated with readout circuitry and driving and supporting circuitry provides a monolithic focal plane array or imager. This imager is designed in a commercial CMOS-SOI Fab and the MEMS micromachining is provided as post-processing step in order to reduce cost. Thus the CMOS transistors and technology provide the sensors as well as the signal processing and additional readout circuitry both in the pixels as well as around the sensor array. | 12-29-2011 |
20130056353 | ION SENSITIVE DETECTOR - An ISFET detector for determining concentration of a target ion in a fluid, the apparatus comprising: a semiconducting substrate comprising a source and a drain having source and drain electrodes respectively and a channel region between them in the substrate; an insulating material overlying the channel region; a gate electrode formed on the insulating material; a reference electrode electrifiable to establish an electric field in the channel region; an accumulator comprising a layer of material of thickness less than or equal to about 2 nm (nanometers) that accumulates a quantity of target ions responsive to concentration of the target ions in the fluid; a layer of a conducting material on which the accumulator is formed that is separate from the gate electrode; and a conducting element that electrically connects the layer of conducting material to the gate electrode. | 03-07-2013 |
20130099091 | DEVICE HAVING AN AVALANCHE PHOTO DIODE AND A METHOD FOR SENSING PHOTONS - A semiconductor device that may include an avalanche photodiode (APD), the APD may include: a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region. | 04-25-2013 |
20130142215 | Sensing device having a thermal antenna and a method for sensing electromagnetic radiation - A method and a sensing device are provided. The sensing device may include: a thermal antenna that includes a resistive material and has a cross section that has dimensions that are of an order of a micron or of a sub-micron. The thermal antenna may receive electromagnetic radiation and directly convert it to heat. The sensing device may also include a supporting element, a thermal sensor arranged to generate detection signals responsive to a temperature of a sensed area of the thermal sensor, a holding element that may support and thermally isolate the thermal antenna and the thermal sensor and thermally isolate, and a readout circuit that may process the detection signals to provide information about the electromagnetic radiation that is directly converted to heat by the thermal antenna. The thermal antenna and the thermal sensor are spatially separated from the supporting element. | 06-06-2013 |
20140151581 | TERAHERTZ SOURCE - A TeraHertz radiating system that may include a blackbody arranged to emit blackbody radiation that comprises a TeraHertz component, a visible light component and an infrared component; and a filtering module that is arranged to pass the TeraHertz component and to reject the visible light component and the infrared component to provide filtered radiation. | 06-05-2014 |
20140312209 | MUZZLE FLASH DETECTION - A device that may include a narrowband filter that is arranged to pass radiation within a main signal waveband in which a muffle flash is expected to include energy above a first energy threshold; a first single photon avalanche diode (SPAD) arranged to detect photons of the main signal waveband during different points in time and to output first digital detection signals representative of the photons of the main signal waveband; and a signal processor that is arranged to receive the first digital detection signals and to detect, in response to at least the first digital detection signals, the muffle flash. | 10-23-2014 |