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Nayfeh, US
Ali Hasan Nayfeh, Blacksburg, VA US
| Patent application number | Description | Published |
|---|---|---|
| 20100321027 | Methods and Systems for Detection Using Threshold-Type Electrostatic Sensors - Methods, apparatus and systems are described as relating to electrostatic sensors for detection in micro or nano electromechanical systems. In exemplary embodiments, a sensor for detecting a threshold value of is provided. The sensor includes a deformable member with a mass detection area, an electrostatic actuator having first and second plates, the first plate being connected to the mass detection area, and a voltage source connected to each of the first and second plate. The operating voltage being proximate to a local bifurcation point of the electrostatic sensor for the first and second plates to pull-in together. Upon an external mass having the threshold value appearing on the mass detection area, the local bifurcation point of the electrostatic sensor is shifted such that the first and second plates will pull in to contact each other by movement of the deformable member to signal detection. | 12-23-2010 |
Ammar Munir Nayfeh, Stanford, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090061604 | GERMANIUM SUBSTRATE-TYPE MATERIALS AND APPROACH THEREFOR - Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices. | 03-05-2009 |
| 20100159678 | GERMANIUM SUBSTRATE-TYPE MATERIALS AND APPROACH THEREFOR - Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices. | 06-24-2010 |
Hasan M. Nayfeh, Hopewell Junction, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20100330763 | METHOD OF CREATING ASYMMETRIC FIELD-EFFECT-TRANSISTORS - The present invention provides a method of forming asymmetric field-effect-transistors. The method includes forming at least a first and a second gate-mask stack on top of a semiconductor substrate, wherein the first and second gate-mask stacks include at least, respectively, a first and a second gate conductor of a first and a second transistor and have, respectively, a top surface, a first side, and a second side with the second side being opposite to the first side; performing a first halo implantation from the first side of the first and second gate-mask stacks at a first angle while applying the first gate-mask stack in preventing the first halo implantation from reaching a first source/drain region of the second transistor, wherein the first angle is equal to or larger than a predetermined value; and performing a second halo implantation from the second side of the first and second gate-mask stacks at a second angle, thereby creating halo implant in a second source/drain region of the second transistor, wherein the first and second angles are measured against a normal to the substrate. | 12-30-2010 |
| 20110089499 | STRUCTURE AND METHOD FOR MANUFACTURING ASYMMETRIC DEVICES - A plurality of gate structures are formed on a substrate. Each of the gate structures includes a first gate electrode and source and drain regions. The first gate electrode is removed from each of the gate structures. A first photoresist is applied to block gate structures having source regions in a source-down direction. A first halo implantation is performed in gate structures having source regions in a source-up direction at a first angle. The first photoresist is removed. A second photoresist is applied to block gate structures having source regions in a source-up direction. A second halo implantation is performed in gate structures having source regions in a source-down direction at a second angle. The second photoresist is removed. Replacement gate electrodes are formed in each of the gate structures. | 04-21-2011 |
| 20110254059 | STRUCTURE AND METHOD FOR MANUFACTURING ASYMMETRIC DEVICES - A plurality of gate structures are formed on a substrate. Each of the gate structures includes a first gate electrode and source and drain regions. The first gate electrode is removed from each of the gate structures. A first photoresist is applied to block gate structures having source regions in a source-down direction. A first halo implantation is performed in gate structures having source regions in a source-up direction at a first angle. The first photoresist is removed. A second photoresist is applied to block gate structures having source regions in a source-up direction. A second halo implantation is performed in gate structures having source regions in a source-down direction at a second angle. The second photoresist is removed. Replacement gate electrodes are formed in each of the gate structures. | 10-20-2011 |
Hasan M. Nayfeh, Poughkeepsie, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20120112280 | BUTTED SOI JUNCTION ISOLATION STRUCTURES AND DEVICES AND METHOD OF FABRICATION - A structure, a FET, a method of making the structure and of making the FET. The structure including: a silicon layer on a buried oxide (BOX) layer of a silicon-on-insulator substrate; a trench in the silicon layer extending from a top surface of the silicon layer into the silicon layer, the trench not extending to the BOX layer, a doped region in the silicon layer between and abutting the BOX layer and a bottom of the trench, the first doped region doped to a first dopant concentration; a first epitaxial layer, doped to a second dopant concentration, in a bottom of the trench; a second epitaxial layer, doped to a third dopant concentration, on the first epitaxial layer in the trench; and wherein the third dopant concentration is greater than the first and second dopant concentrations and the first dopant concentration is greater than the second dopant concentration. | 05-10-2012 |
Hasan Munir Nayfeh, Poughkeepsie, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20100090288 | METHOD OF FORMING SOURCE AND DRAIN OF A FIELD-EFFECT-TRANSISTOR AND STRUCTURE THEREOF - A semiconductor fabrication method involving the use of eSiGe is disclosed. The eSiGe approach is useful for applying the desired stresses to the channel region of a field effect transistor, but also can introduce complications into the semiconductor fabrication process. Embodiments of the present invention disclose a two-step fabrication process in which a first layer of eSiGe is applied using a low hydrogen flow rate, and a second eSiGe layer is applied using a higher hydrogen flow rate. This method provides a way to balance the tradeoff of morphology, and fill consistency when using eSiGe. Embodiments of the present invention promote a pinned morphology, which reduces device sensitivity to epitaxial thickness, while also providing a more consistent fill volume, amongst various device widths, thereby providing a more consistent eSiGe semiconductor fabrication process. | 04-15-2010 |
Munir Nayfeh, Urbana, IL US
| Patent application number | Description | Published |
|---|---|---|
| 20110229995 | Silicon Nanoparticle White Light Emitting Device - Multiple films of red-green-blue (RGB) luminescent silicon nanoparticles are integrated in a cascade configuration as a top coating in an ultraviolet/blue light emitting diode (LED) to convert it to a white LED. The configuration of RGB luminescent silicon nanoparticle films harnesses the short wavelength portion of the light emitted from the UV/blue LED while transmitting efficiently the longer wavelength portion. The configuration also reduces damaging heat and/or ultraviolet effects to both the device and to humans. | 09-22-2011 |
Samir Nayfeh, Shrewsbury, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20090273878 | GAS BEARING ELECTROSTATIC CHUCK - An electrostatic clamp is provided having a clamping plate, wherein the clamping plate has a central region and an annulus region. A plurality of gas supply orifices are defined in the central region of the clamping plate, wherein the plurality of gas supply orifices are in fluid communication with a pressurized gas supply, and wherein the pressurized gas supply is configured to provide a cushion of gas between the clamping surface and the workpiece in the central region of the clamping plate via the plurality of gas supply orifices. One or more gas return orifices defined in one or more of the central region and annulus region of the clamping plate, wherein the one or more gas return orifices are in fluid communication with a vacuum source, therein generally defining an exhaust path for the cushion of gas. A seal is disposed in the annulus region of the clamping plate, wherein the seal is configured to generally prevent a leakage of the cushion of gas from the central region to an environment external to the annulus region. One or more electrodes are further electrically connected to a first voltage potential to provide a first clamping force. | 11-05-2009 |
Samir Nayfeh, Cambridge, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20090275893 | INSTRUMENT PORT FOR MINIMALLY INVASIVE CARDIAC SURGERY - An instrument port for introducing instruments into a surgical site, including a port body having a channel running therethrough from a proximal end to a distal end, an instrument sleeve in slidable contact with the channel, creating a gap therebetween, and fluid flow for removing emboli efficiently from the instrument port, wherein the fluid flow includes the gap is provided. A fluid flow system for use in an instrument port is provided. A method of removably securing an instrument sleeve to a port body by anchoring the instrument port to heart tissue, making at least one flood line in a channel, flushing out emboli, and performing surgery with the instrument port. | 11-05-2009 |
Samir A. Nayfeh, Shrewsbury, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20110013164 | Shear-Layer Chuck for Lithographic Apparatus - A lithographic apparatus is described that comprises a support structure ( | 01-20-2011 |
| 20120026474 | Reticle Cooling in a Lithographic Apparatus - An apparatus and method reduce temperature variation across a reticle so as to reduce the expansion variation of the reticle. One method for realizing reduced temperature variation is to fill an inner space with backfill gas under pressure, using distribution trenches and walls (e.g., flow restriction dams), rather than providing uniform backfill gas pressure across the entire reticle. In another method, the perimeter of inner space can be chosen to reduce the expansion variation across the reticle based on the functional relationship between expansion and temperature for the reticle material. In an optional or alternative approach, reduced temperature variation across the reticle can be obtained by selectively filling cavities in the interior of the fluid cooled chuck with backfill gas. | 02-02-2012 |
Taysir H. Nayfeh, Cleveland, OH US
| Patent application number | Description | Published |
|---|---|---|
| 20080245930 | HIGH INTENSITY LASER POWER BEAMING RECEIVER FOR SPACE AND TERRESTRIAL APPLICATIONS - Systems and methods are described that facilitate refueling a vehicle with electrical energy by targeting receiver thereon and pointing a high-intensity laser source at the receiver. Vertical multi-junction (VMJ) photocells receive the laser energy and convert the laser energy into electrical energy. The laser source can operate at a range of output power levels depending on the vehicle's energy needs. The laser source can be pulsed or continuous near-infrared laser source. A heat exchanger can be coupled to the receiver to dissipate laser energy not converted into electrical energy. If the vehicle has a propeller, the heat exchanger can be mounted to the vehicle in the propeller wash path. | 10-09-2008 |
| 20090171477 | LASER GENERATED SYNTHETIC MEGA SCALE APERTURE FOR SOLAR ENERGY CONCENTRATION AND HARNESSING - Systems and methods are described that employ high-intensity lasers to set up a thin plasma sheet, also called a waveguide or “hot shell”, in the atmosphere as a function of beam intensity and geometry. A laser beam can be spread and directed with physical optics (e.g., lenses, mirrors, other optical elements, etc.) to generate a thin inverted cone-shaped hot shell waveguide in the atmosphere. The hot shell of the waveguide has a different index of refraction (n) from that of the surrounding air layers and as such serves to internally reflect portions of the entering solar rays entering an aperture in the hot shell, toward the tip of the cone and a solar energy storage component positioned there, thus providing a virtual solar energy concentration system. In another embodiment, the solar energy storage component shuts down or otherwise rejects incoming solar energy when fully charged, to mitigate damage to system components. | 07-02-2009 |
| 20100203351 | HIGH STRENGTH COMPOSITE MATERIALS AND RELATED PROCESSES - Composite materials exhibiting very high strength properties and other characteristics are disclosed. The materials comprise one or more nanomaterials dispersed within one or more matrix materials. The nanomaterials can be in a variety of forms, such as for example, carbon nanotubes and/or nanofibers. The matrix material can be glass, fused silicas, or metal. Also disclosed are various processes and operations to readily disperse and uniformly align the nanotubes and/or nanofibers in the flowing matrix material, during production of the composite materials. | 08-12-2010 |