| Patent application number | Description | Published |
|---|
| 20080210923 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor device including a heater electrode formed in a contact hole formed in an interlayer insulation film to expose a lower electrode, the heater electrode includes at least three heater electrode layers which are successively laminated and successively increased in specific resistivity in a direction from the lower electrode towards a phase change film in this order. The interlayer insulation film is formed on a semiconductor substrate to cover the lower electrode. The phase change film is formed in contact with an upper surface of the heater electrode. An upper electrode is formed on an upper surface of the phase change film. | 09-04-2008 |
| 20090101885 | Method of producing phase change memory device - An area where a lower electrode is in contact with a variable resistance material needs to be reduced in order to lower the power consumption of a variable resistance memory device. The present invention provides a method of producing a variable resistance memory element whereby the lower electrode can be more finely formed. The method of producing a semiconductor device according to the present invention includes forming a small opening by utilizing cubical expansion due to the oxidation of silicon. Thereby forming the lower electrode smaller than that can be formed by lithography techniques. | 04-23-2009 |
| 20090104779 | Method of producing phase change memory device - An area where a lower electrode is in contact with a variable resistance material needs to be reduced to lower the power consumption of a variable resistance memory device. The present invention is to provide a method of producing a variable resistance memory element whereby the lower electrode can be formed smaller. Combining an anisotropic etching process with an isotropic etching process enables the lower electrode to be formed smaller. | 04-23-2009 |
| 20090218557 | Phase change memory device and fabrication method thereof - A phase change memory device is provided in which the area of contact between phase change material and heater electrode is reduced to suppress current required for heating and a phase change region is formed directly on a contact to raise the degree of integration. The device comprises a heater electrode in which the lower part thereof is surrounded by a side wall of a first insulating material and the upper part thereof protruding from the side wall has a sharp configuration covered by a second insulating material except for a part of the tip end thereof, and the exposed tip end is coupled to the phase change material layer. | 09-03-2009 |
| 20090221146 | Nonvolatile memory device and manufacturing method for the same - The object of the present invention is to provide a manufacturing method for a nonvolatile memory device including a variable resistance having a constricted shape. The nonvolatile memory device of the present invention has a storage section composed of two electrodes and a variable resistance sandwiched between the electrodes. The variable resistance is formed to a constricted shape between the electrodes. | 09-03-2009 |
| 20100078616 | NONVOLATILE MEMORY DEVICE AND MANUFACTURING PROCESS THEREOF - A nonvolatile memory device has a first insulating layer, a variable resistance layer provided on the first insulating layer and having a variable resistance material, and a first electrode and second electrode electrically connected with the variable resistance layer. The variable resistance layer has a variable resistance region as a data storing region and a thickness-changing region continuously extending from the variable resistance region and gradually becoming thicker from the variable resistance region. | 04-01-2010 |
| 20100123114 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device ( | 05-20-2010 |
