Patent application number | Description | Published |
20090108387 | Semiconductor Device And Method For Strain Controlled Optical Absorption - A semiconductor device which has controlled optical absorption includes a substrate, and a semiconductor layer supported by the substrate. The semiconductor has variable optical absorption at a predetermined optical frequency in relationship to a bandgap of the semiconductor layer. Also included is a strain application structure coupled to the semiconductor layer to create a strain in the semiconductor layer to change the semiconductor bandgap. | 04-30-2009 |
20090189144 | Device For Absorbing Or Emitting Light And Methods Of Making The Same - A device disclosed herein includes a first layer, a second layer, and a first plurality of nanowires established between the first layer and the second layer. The first plurality of nanowires is formed of a first semiconductor material. The device further includes a third layer, and a second plurality of nanowires established between the second and third layers. The second plurality of nanowires is formed of a second semiconductor material having a bandgap that is the same as or different from a bandgap of the first semiconductor material. | 07-30-2009 |
20090238511 | Nanoparticle-based Quantum Confined Stark Effect Modulator - An optical modulator includes a first layer that is transparent or semitransparent over a range of optical wavelengths; a modulation layer made from nanoparticles embedded in a matrix; a first electrode and a second electrode that create an electrical field that passes through the modulation layer. A method for forming a nanoparticle modulator includes obtaining and preparing a substrate; forming sub-layers on the substrate; forming a nanoparticle modulator layer, where the nanoparticle modulator layer is an electrical insulator and has a thickness of less than the wavelength of light the nanoparticle QCSE modulator is designed to modulate. | 09-24-2009 |
20090246460 | Structure And Method For Forming Crystalline Material On An Amorphous Structure - A structure includes a first amorphous layer and a second amorphous layer established on the first amorphous layer such that at least an edge of the first amorphous layer or the second amorphous having a predetermined geometry is exposed. A material having a controlled crystal orientation is selectively formed adjacent the exposed edge of the first amorphous layer or the second amorphous having the predetermined geometry. | 10-01-2009 |
20100003462 | Structure Including A Graphene Layer And Method For Forming The Same - A method for forming a graphene layer is disclosed herein. The method includes establishing an insulating layer on a substrate such that at least one seed region, which exposes a surface of the substrate, is formed. A seed material in the seed region is exposed to a carbon-containing precursor gas, thereby initiating nucleation of the graphene layer on the seed material and enabling lateral growth of the graphene layer along at least a portion of a surface of the insulating layer. | 01-07-2010 |
20100019355 | Multi-Level Nanowire Structure And Method Of Making The Same - A method for making a multi-level nanowire structure includes establishing a first plurality of nanowires on a substrate surface, wherein at least some of the nanowires are i) aligned at a predetermined crystallographically defined angle with respect to the substrate surface, ii) aligned substantially perpendicular with respect to the substrate surface, or iii) combinations of i and ii. An insulating layer is established between the nanowires of the first plurality such that one of two opposed ends of at least some of the nanowires positioned i) at the predetermined crystallographically defined angle, ii) substantially perpendicular with respect to the substrate surface, or iii) combinations of i and ii is exposed. Regions are grown from each of the exposed ends, and such regions coalesce to form a substantially continuous layer on the insulating layer. A second plurality of nanowires is established on the substantially continuous layer. | 01-28-2010 |
20110006348 | ROUNDED THREE-DIMENSIONAL GERMANIUM ACTIVE CHANNEL FOR TRANSISTORS AND SENSORS - A process is provided for fabricating rounded three-dimensional germanium active channels for transistors and sensors. For forming sensors, the process comprises providing a crystalline silicon substrate; depositing an oxide mask on the crystalline silicon substrate; patterning the oxide mask with trenches to expose linear regions of the silicon substrate; epitaxially grow germanium selectively in the trenches, seeded from the silicon wafer; optionally etching the SiO | 01-13-2011 |