| Patent application number | Description | Published |
|---|
| 20090022448 | Optical device including waveguide grating structure - Optical devices including waveguide grating structures are described. In accordance with one embodiment, an optical device is provided comprising a horizontal waveguide grating structure having at least one waveguiding layer and at least one subwavelength periodic grating layer. The optical device further comprises upper and lower cladding layers immediately adjoining respective upper and lower surfaces of the waveguide grating structure and having refractive indices lower than a lowest-index one of the waveguiding layers, incident radiation propagating through one of the upper and lower cladding layers toward the waveguide grating structure. The waveguide grating structure is configured for peak reflection of the incident radiation at a peak reflection frequency. A cumulative thickness of the waveguiding layers is less than one tenth of a free space wavelength of the incident radiation at the peak reflection frequency divided by an average refractive index of the waveguiding layers. | 01-22-2009 |
| 20090028493 | Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same - Various embodiments of the present invention are directed to surface-plasmon-enhanced electromagnetic-radiation-emitting devices and to methods of fabricating these devices. In one embodiment of the present invention, an electromagnetic-radiation-emitting device comprises a multilayer core, a metallic device layer, and a substrate. The multilayer core has an inner layer and an outer layer, wherein the outer layer is configured to surround at least a portion of the inner layer. The metallic device layer is configured to surround at least a portion of the outer layer. The substrate has a bottom conducting layer in electrical communication with the inner layer and a top conducting layer in electrical communication with the metallic device layer such that the exposed portion emits surface-plasmon-enhanced electromagnetic radiation when an appropriate voltage is applied between the bottom conducting layer and the top conducting layer. | 01-29-2009 |
| 20110014457 | Graphene Layer With An Engineered Stress Supported On A Substrate - A structure comprising a layer of graphene supported on a substrate wherein the substrate is pre-selected to have a coefficient of thermal expansion that is either matched within about 10% of that of graphene or mis-matched, thereby inducing controlled stress in the graphene layer to control electrical and/or mechanical properties of devices fabricated in the graphene layer. | 01-20-2011 |
| 20110083739 | ENERGY COLLECTION SYSTEMS AND METHODS - An energy collection system is provided. The system can include an energy collection device and an energy concentration device disposed proximate at least a portion of the energy collection device. The energy concentration device includes a non-periodic, sub-wavelength, dielectric grating. | 04-14-2011 |
| 20110221027 | Using Alloy Electrodes to Dope Memristors - Various embodiments of the present invention are direct to nanoscale, reconfigurable, memristor devices. In one aspect, a memristor device comprises an electrode ( | 09-15-2011 |
| 20110248381 | Multilayer Memristive Devices - A multilayer memristive device includes a first electrode ( | 10-13-2011 |
| 20110266510 | Controlled Placement of Dopants in Memristor Active Regions - Various embodiments of the present invention are direct to nanoscale, reconfigurable memristor devices. In one aspect, a memristor device ( | 11-03-2011 |
| 20120025343 | THERMOELECTRIC DEVICE HAVING A VARIABLE CROSS-SECTION CONNECTING STRUCTURE - A thermoelectric device having a variable cross-section connecting structure includes a first electrode, a second electrode, and a connecting structure connecting the first electrode and the second electrode. The connecting structure has a first section and a second section. The width of the second section is greater than the width of the first section, and the width of the first section is less than a width that is approximately equivalent to a phonon mean free path through the first section. | 02-02-2012 |
