Patent application number | Description | Published |
20100168883 | AUDIO REPRODUCING APPARATUS - An audio reproducing apparatus includes: a decoding module configured to perform a decoding process on a digital broadcast signal demodulated by a demodulating module and generate an audio signal; a generating module configured to generate suspension audio data based on the audio signal of a first given time period, the audio signal being output from the decoding module; a switching module configured to switch a source of the audio signal to be output from the audio output module between the decoding module and a storage module; and a control module configured to control the switching module to switch the source to the storage module for causing an audio output module to output selected suspension audio data to be faded-out when a suspension of the decoding by the decoding module is occurred, the selected suspension audio data being the suspension audio data stored immediately before the suspension. | 07-01-2010 |
20100328441 | VIDEO DISPLAY DEVICE - A video display device includes: a connection detecting module configured to detect whether a shutter glasses is connected to the device; a generation module configured to generate a second frame, which is alternately displayed with a first frame included in a video content, by adding an irregular pattern to an image viewed in a predetermined color when the connection detecting module detects that the shutter glasses is connected; a display unit configured to display the video content; a video display controller configured to control the display unit to alternately display the first frame and the second frame; and a shutter glasses controller configured to control the shutter glasses to close shutters in synchronization with the time for displaying the second frame. | 12-30-2010 |
20110158431 | Electronic Apparatus - According to one embodiment, an electronic apparatus includes a speaker, a terminal, an amplifier, a power supply circuit, and a first controller. The terminal is configured to input an audio signal from an external apparatus. The amplifier is configured to amplify the audio signal which is input from the terminal, and to output sound from the speaker. The power supply circuit is configured to supply power to the amplifier. The first controller is configured to control the power supply circuit in order to continue the supply of power to the amplifier, if the external apparatus is connected to the terminal when the electronic apparatus transitions from a operative state to a non-operative state. | 06-30-2011 |
Patent application number | Description | Published |
20080199768 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY - In a nonaqueous electrolyte secondary battery in which an electrode plate group including a positive electrode plate and a negative electrode plate which have a positive electrode mixture layer formed on a positive electrode current collector to contain a positive electrode active material and a negative electrode mixture layer formed on a negative electrode current collector to contain a negative electrode active material, respectively, and are spirally wound or stacked with a separator interposed therebetween is encapsulated in a battery exterior packaging body with an electrolyte, the battery exterior packaging body includes a gas releasing valve for releasing gas in the battery exterior packaging body to the outside when a gas pressure in the battery exterior packaging body reaches a working pressure and is formed to be deformable where the gas pressure in the battery exterior packaging body is lower than the working pressure of the gas releasing valve. | 08-21-2008 |
20080241684 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND METHOD FOR MANUFACTURING THE SAME - A lithium ion secondary battery includes a positive electrode, a negative electrode, a porous insulating layer and a nonaqueous electrolyte. The porous insulating layer is provided between the positive electrode material mixture layer and the negative electrode material mixture layer and contains a material which does not have a shutdown function. The positive electrode is provided with a PTC layer extending substantially parallel to the positive electrode collector and the negative electrode is provided with a PTC layer extending substantially parallel to the negative electrode collector. Each of the PTC layers contains a material having a positive temperature coefficient of resistance. | 10-02-2008 |
20080254355 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY - A lithium ion secondary battery includes a positive electrode, a negative electrode, a porous insulating layer and a nonaqueous electrolyte. The porous insulating layer is provided between the positive electrode and the negative electrode and contains a material which does not have a shutdown function. Each of the positive electrode and the negative electrode includes an expandable element. | 10-16-2008 |
20090286164 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - A non-aqueous electrolyte secondary battery includes a positive electrode, a negative electrode, a non-aqueous electrolyte, and an insulating layer formed on a surface of the positive electrode. The positive electrode includes a lithium nickel composite oxide having a layer structure, and the lithium nickel composite oxide is represented by the general formula: Li | 11-19-2009 |
20090305123 | SECONDARY BATTERY AND METHOD FOR PRODUCING THE SAME - A secondary battery includes an electrode group | 12-10-2009 |
20100310938 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - The present invention mainly relates to non-aqueous electrolyte secondary batteries. The present invention intends to provide a non-aqueous electrolyte secondary battery having excellent cycle characteristics and excellent storage characteristics. | 12-09-2010 |
Patent application number | Description | Published |
20090205562 | METHOD FOR MANUFACTURING EPITAXIAL WAFER - In a method for manufacturing an epitaxial wafer by which an epitaxial layer is formed on a surface of a silicon wafer arranged in a reactor by distributing a raw material gas in the reactor, a temperature of a susceptor at the time of carrying the silicon wafer into the reactor is adjusted in accordance with a resistivity of the silicon wafer. There is provided the method for manufacturing an epitaxial wafer, the method enabling reduction in generation of particles from friction of a back surface edge portion and the susceptor due to warpage of the wafer caused at the time of carriage into the reactor and occurrence of scratches on the silicon wafer back surface edge portion without requiring a complicated apparatus. | 08-20-2009 |
20100003811 | METHOD FOR MANUFACTURING EPITAXIAL WAFER - A method for manufacturing an epitaxial wafer is provided, which can alleviate distortions on a back surface of the epitaxial wafer. The method for manufacturing an epitaxial wafer using a susceptor for a vapor phase growth system having a concave shaped wafer placement portion on an upper face thereof, on which a semiconductor wafer is placed, includes: an oxide film forming step in which an oxide film Ox is formed on a back surface of the semiconductor wafer; a wafer placing step in which, after the oxide film forming step, the semiconductor wafer is placed on a wafer placement portion so that the back surface of the semiconductor wafer faces downward; and an epitaxial growth step in which, after the wafer placing step, an epitaxial layer is grown on a main surface of the semiconductor wafer. | 01-07-2010 |
20100159679 | MANUFACTURING METHOD FOR EPITAXIAL WAFER - To provide a manufacturing method for an epitaxial wafer that alleviates distortions on a back surface thereof due to sticking between a wafer and a susceptor, thereby preventing decrease in flatness thereof due to a lift pin. A manufacturing method for an epitaxial wafer according to the present invention includes: an oxide film forming step in which an oxide film is formed on a back surface thereof; an etching step in which a hydrophobic portion exposing a back surface of the semiconductor wafer is provided by partially removing the oxide film; a wafer placing step in which the semiconductor wafer is placed; and an epitaxial growth step in which an epitaxial layer is grown on a main surface of the semiconductor wafer; and the diameter of the lift pin installation circle provided on a circle on a bottom face of a susceptor is smaller than that of the hydrophobic portion. | 06-24-2010 |
20110132255 | METHOD FOR PRODUCING EPITAXIAL SILICON WAFER - Since vapor-phase growth of an epitaxial film is performed on the surface of a mirror surface silicon wafer which is not subjected to final polishing, and the surface of the epitaxial film is thereafter subjected to HCl gas etching, the mirror polishing step is simplified, and the productivity is improved, that enables a reduction in cost, and it is possible to suppress the surface roughness of the epitaxial film as well. | 06-09-2011 |
20120104565 | EPITAXIAL WAFER AND METHOD FOR PRODUCING THE SAME - When a mixed gas of trichlorosilane and dichlorosilane is used as source gas, a silicon layer is epitaxially grown on a surface of a silicon wafer within a temperature range of 1000 to 1100° C., preferably, 1040 to 1080° C. When dichlorosilane is used as source gas, a silicon layer is epitaxially grown on a surface of a silicon wafer within a temperature range of 900 to 1150° C., preferably, 1000 to 1150° C. According to this, a silicon epitaxial wafer, which has low haze level, excellent flatness (edge roll-off), and reduced orientation dependence of epitaxial growth rate, and is capable of responding to the higher integration of semiconductor devices, can be obtained, and this epitaxial wafer can be used widely in production of semiconductor devices. | 05-03-2012 |