Patent application number | Description | Published |
20090001478 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A GaN layer and an n-type AlGaN layer are formed over an insulating substrate, and thereafter, a gate electrode, a source electrode and a drain electrode are formed on them. Next, an opening reaching at least a surface of the insulating substrate is formed in the source electrode, the GaN layer and the n-type AlGaN layer. Then, a nickel (Ni) layer is formed in the opening. Thereafter, by conducting dry etching from the back side while making the nickel (Ni) layer serve as an etching stopper, a via hole reaching the nickel (Ni) layer is formed in the insulating substrate. Then, a via wiring is formed extending from an inside the via hole to the back surface of the insulating substrate. | 01-01-2009 |
20090061576 | MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR DEVICE AND ETCHING SOLUTION - After an n-type AlGaN barrier layer ( | 03-05-2009 |
20090140262 | FIELD-EFFECT TRANSISTOR - A field-effect transistor includes a carrier transport layer made of nitride semiconductor, a gate electrode having first and second sidewall surfaces on first and second sides, respectively, an insulating film formed directly on the gate electrode to cover at least one of the first and second sidewall surfaces, first and second ohmic electrodes formed on the first and second sides, respectively, a passivation film including a first portion extending from the first ohmic electrode toward the gate electrode to cover a surface area between the first ohmic electrode and the gate electrode and a second portion extending from the second ohmic electrode toward the gate electrode to cover a surface area between the second ohmic electrode and the gate electrode, wherein the insulating film is in direct contact with at least the first and second passivation film portions, and has a composition different from that of the passivation film. | 06-04-2009 |
20100052176 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a first wiring extending in a first direction and a second wiring extending in a second direction which crosses the first direction and being disposed with a space interposed between the first wiring and the second wiring, and including a tantalum layer, a tantalum nitride layer formed over the tantalum layer, and a metal layer formed over the tantalum nitride layer. | 03-04-2010 |
20100320505 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND AMPLIFIER - A semiconductor device includes a nitride semiconductor layer having a (0001) face and a (000-1) face, formed above a common substrate; a (0001) face forming layer provided partially between the substrate and the nitride semiconductor layer; a source electrode, a drain electrode, and a gate electrode, provided on the nitride semiconductor layer having the (0001) face; and a hole extracting electrode provided on the nitride semiconductor layer having the (000-1) face. | 12-23-2010 |
20110115025 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a compound semiconductor layer provided over a substrate, a plurality of source electrodes and a plurality of drain electrodes provided over the compound semiconductor layer, a plurality of first vias each of which is configured to pass through the compound semiconductor layer and be coupled to a corresponding one of the plurality of source electrodes, a plurality of second vias each of which is configured to pass through the compound semiconductor layer and be coupled to a corresponding one of the plurality of drain electrodes, a common source wiring line configured to be coupled to the plurality of first vias and be buried in the substrate, and a common drain wiring line configured to be coupled to the plurality of second vias and be buried in the substrate. | 05-19-2011 |
20110241074 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A GaN layer and an n-type AlGaN layer are formed over an insulating substrate, and thereafter, a gate electrode, a source electrode and a drain electrode are formed on them. Next, an opening reaching at least a surface of the insulating substrate is formed in the source electrode, the GaN layer and the n-type AlGaN layer. Then, a nickel (Ni) layer is formed in the opening. Thereafter, by conducting dry etching from the back side while making the nickel (Ni) layer serve as an etching stopper, a via hole reaching the nickel (Ni) layer is formed in the insulating substrate. Then, a via wiring is formed extending from an inside the via hole to the back surface of the insulating substrate. | 10-06-2011 |
20120074426 | FIELD-EFFECT TRANSISTOR - A field-effect transistor includes a carrier transport layer made of nitride semiconductor, a gate electrode having first and second sidewall surfaces on first and second sides, respectively, an insulating film formed directly on the gate electrode to cover at least one of the first and second sidewall surfaces, first and second ohmic electrodes formed on the first and second sides, respectively, a passivation film including a first portion extending from the first ohmic electrode toward the gate electrode to cover a surface area between the first ohmic electrode and the gate electrode and a second portion extending from the second ohmic electrode toward the gate electrode to cover a surface area between the second ohmic electrode and the gate electrode, wherein the insulating film is in direct contact with at least the first and second passivation film portions, and has a composition different from that of the passivation film. | 03-29-2012 |
20120218796 | COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING THE SAME, AND POWER SUPPLY - A compound semiconductor device includes: a substrate; a first compound semiconductor layer formed over the substrate; a second compound semiconductor layer formed over the first compound semiconductor layer; and an upper electrode formed over the first compound semiconductor layer, wherein two-dimensional hole gas is generated in a region of the first compound semiconductor layer, the region being located at an interface between the first compound semiconductor layer and the second compound semiconductor layer, so as to have a hole concentration that decreases with increasing distance from the upper electrode. | 08-30-2012 |