Patent application number | Description | Published |
20080196743 | CLEANING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - A cleaning method includes: producing an oxidizing solution by electrolysis of sulfuric acid; and cleaning a workpiece with the oxidizing solution. The oxidizing solution is heated by heat of mixing to clean the workpiece. A method for manufacturing an electronic device includes: producing a workpiece; producing an oxidizing solution by electrolysis of sulfuric acid; and cleaning the workpiece with the oxidizing solution. The oxidizing solution is heated by heat of mixing to clean the workpiece. | 08-21-2008 |
20080233452 | POLYELECTROLYTE MATERIAL, METHOD FOR PRODUCING POLYELECTROLYTE MATERIAL, POLYELECTROLYTE COMPONENT, FUEL CELL, AND METHOD FOR PRODUCING FUEL CELL - A polyelectrolyte material includes as a main chain: a benzene ring; an ether; and a carbonyl group. A part of the benzene ring is sulfonated. A method for manufacturing a polyelectrolyte material includes: synthesizing disulfonyl difluorobenzophenone; and polymerizing the disulfonyl difluorobenzophenone, 4,4′-difluorobenzophenone, and phenolphthalein with a crown ether as a catalyst. The synthesizing is performed by reacting 4,4′-difluorobenzophenone with fuming sulfuric acid, performing salting-out the reaction product, and recrystallizing the salting-out product. | 09-25-2008 |
20090000640 | SURFACE TREATMENT METHOD, ETCHING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by successively etching the layers of the workpiece. The method further includes after removing the reaction product, removing an oxide-containing reaction product from the surface of the workpiece using hydrogen fluoride gas. | 01-01-2009 |
20090081510 | SUPPORTED CATALYST, METHOD FOR MANUFACTURING SUPPORTED CATALYST, FUEL CELL, AND METHOD FOR MANUFACTURING FUEL CELL - A supported catalyst includes: a catalyst; and a carbon body. The catalyst is supported on the carbon body, and the carbon body is linear. | 03-26-2009 |
20090081515 | SUPPORTED CATALYST, METHOD FOR MANUFACTURING SUPPORTED CATALYST, FUEL CELL, AND METHOD FOR MANUFACTURING FUEL CELL - A supported catalyst includes: a particulate first carbon material; and a particulate second carbon material supporting a catalyst, having a smaller center particle diameter than the first carbon material, and adsorbed on a surface of the first carbon material. | 03-26-2009 |
20090084754 | METHOD AND SYSTEM FOR MANUFACTURING MICROSTRUCTURE - A method for manufacturing a microstructure includes treating a surface of the microstructure having a wall body with a liquid, supplying a material activating the surface of the liquid to the surface of the microstructure, and drying the surface of the microstructure. | 04-02-2009 |
20090165819 | METHOD FOR TREATING FINE STRUCTURE, SYSTEM FOR TREATING FINE STRUCTURE, AND METHOD FOR PRODUCING ELECTRONIC DEVICE - A method for treating a fine structure, includes supplying a liquid to a surface of the fine structure having protrusions on the surface thereof; and thereby treating the surface of the fine structure. The liquid has a smaller surface tension than that of water and is not substantially compatible with water. | 07-02-2009 |
20100248431 | METHOD FOR MANUFACTURING NONVOLATILE STORAGE DEVICE - A method for manufacturing a nonvolatile storage device including: a plurality of first electrodes aligning in a first direction; a plurality of second electrodes aligning in a second direction nonparallel to the first direction and provided above the first electrodes; and a first storage unit provided between the first electrode and the second electrode and including a first storage layer, a resistance of the first storage layer changing by at least one of an applied electric field and an applied current, the method includes: stacking a first electrode film forming a first electrode and a first storage unit film forming a first storage unit on a major surface of a substrate; processing the first electrode film and the first storage unit film into a strip shape aligning in the first direction; burying a sacrifice layer between the processed first electrode films and between the processed first storage unit films; forming a second electrode film forming a second electrode on the first storage unit film and the sacrifice layer; forming a mask layer having a lower etching rate than the sacrifice layer on the second electrode film; processing the second electrode film into a strip shape aligning in the second direction nonparallel to the first direction by using the mask layer as a mask; removing a portion of the first storage unit film exposed from the sacrifice layer by using the mask layer as a mask to process the first storage unit film into a columnar shape including a side wall along the first direction and a side wall along the second direction; removing the sacrifice layer to expose the first storage unit film having been covered with the sacrifice layer; and removing the exposed first storage unit film. | 09-30-2010 |
20110037045 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, and a memory. The first electrode is provided on the substrate. The second electrode crosses on the first electrode. The memory portion is provided between the first electrode and the second electrode. At least one of an area of a first memory portion surface of the memory portion opposed to the first electrode and an area of a second memory portion surface of the memory portion opposed to the second electrode is smaller than an area of a cross surface of the first electrode and the second electrode opposed to each other by the crossing. | 02-17-2011 |
20110073489 | CLEANING LIQUID, CLEANING METHOD, CLEANING SYSTEM, AND METHOD FOR MANUFACTURING MICROSTRUCTURE - According to embodiments, a cleaning liquid includes an oxidizing substance and hydrofluoric acid and exhibiting acidity. A cleaning method is disclosed. The method includes producing an oxidizing solution including an oxidizing substance by one selected from electrolyzing a sulfuric acid solution, electrolyzing hydrofluoric acid added to a sulfuric acid solution, and mixing a sulfuric acid solution with aqueous hydrogen peroxide. The method includes supplying the oxidizing solution and hydrofluoric acid to a surface of an object to be cleaned. | 03-31-2011 |
20110073490 | CLEANING METHOD, CLEANING SYSTEM, AND METHOD FOR MANUFACTURING MICROSTRUCTURE - According to one embodiment, a cleaning method is disclosed. The method can produce an oxidizing solution including an oxidizing substance by electrolyzing a dilute sulfuric acid solution. In addition, the method can supply a highly concentrated inorganic acid solution individually, sequentially, or substantially simultaneously with the oxidizing solution to a surface of an object to be cleaned. | 03-31-2011 |
20110143549 | ETCHING METHOD, METHOD FOR MANUFACTURING MICROSTRUCTURE, AND ETCHING APPARATUS - In one embodiment, an etching method is disclosed. The method can include producing an oxidizing substance by electrolyzing a sulfuric acid solution, and producing an etching solution having a prescribed oxidizing species concentration by controlling a produced amount of the produced oxidizing substance. The method can include supplying the produced etching solution to a surface of a workpiece. | 06-16-2011 |
20140061023 | TREATMENT APPARATUS AND TREATMENT METHOD - According to one embodiment, a treatment apparatus includes a treatment liquid storage unit and a supply unit. The treatment liquid storage unit is configured to store a treatment liquid containing an acid and an oxidizing substance. The supply unit is configured to supply the treatment liquid stored in the treatment liquid storage unit to a fluid extracted via a production well. | 03-06-2014 |