Patent application number | Description | Published |
20090294912 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region. | 12-03-2009 |
20090317945 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - Size of a chipping is made small, suppressing blinding of a blade, when performing dicing of a wafer. | 12-24-2009 |
20100109148 | SEMICONDUCTOR DEVICE - When a second semiconductor chip is mounted onto a first semiconductor chip, collision of the first semiconductor chip with a lead frame is to be prevented. The lead frame has a die pad and suspending leads for supporting the die pad. A joining portion is provided over the lead frame. The first semiconductor chip is provided over the lead frame through the joining portion. The second semiconductor chip is provided over the first semiconductor chip. A resin member covers the die pad and the first and second semiconductor chips. The joining portion is positioned over each of the die pad and the suspending leads. | 05-06-2010 |
20100164077 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - To provide a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device. | 07-01-2010 |
20100167468 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes a bonding step of bonding a chip on a wiring board by means of a bonding layer, and a wire bonding step of bonding a wire to a pad on the chip while applying ultrasonic vibration after the bonding step. A material having an elastic modulus of 100 MPa or higher at a process temperature in the wire bonding step is used as the bonding layer. | 07-01-2010 |
20100261334 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region. | 10-14-2010 |
20110266657 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region. | 11-03-2011 |
20120267793 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region. | 10-25-2012 |
20120309131 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - To provide a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device. | 12-06-2012 |