Patent application number | Description | Published |
20080233753 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR MANUFACTURING EQUIPMENT - A method of manufacturing a semiconductor device has polishing a film, and cleaning a polished surface by carrying out a first exposing the polished surface to an acidic first cleaning fluid having an effect of etching at least a partial region of the polished surface, and a second exposing the polished surface to an alkaline second cleaning fluid after the first exposing. | 09-25-2008 |
20080242081 | POLISHING METHOD, POLISHING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A polishing method includes a first polishing step of halfway polishing a film to be polished formed on a substrate, and a second polishing step of further polishing the polished film, wherein a first film thickness profile showing an in-plane distribution of a film thickness of the polished film after the second polishing step for a first substrate is measured, and the first polishing step for a second substrate is executed to obtain a second film thickness profile which has a size relation in a film thickness opposite to the first film thickness profile. | 10-02-2008 |
20090056102 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes (a) depositing an insulating film on a semiconductor substrate; (b) forming a recess in the insulating film; (c) depositing a conductive film on the insulating film while filling the recess with the conductive film; and (d) polishing the conductive film. Step (d) includes a first polishing substep of using a first polisher pad conditioned with a first dresser and a second polishing substep of using a second polisher pad conditioned with a second dresser different from the first dresser. | 03-05-2009 |
20090075477 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to an aspect of an embodiment, a method of manufacturing a semiconductor device has forming a silicon-containing layer over a semiconductor substrate, forming a metal layer over the semiconductor substrate and the silicon-containing layer, forming a silicide-containing layer over the semiconductor substrate and the silicon-containing layer by heat treatment of the semiconductor substrate and the silicon-containing layer, and applying flash annealing to the silicide-containing layer. | 03-19-2009 |
20090215267 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: polishing a semiconductor substrate to expose a polysilicon film on the semiconductor substrate using a chemical mechanical polishing method; cleaning the semiconductor substrate using a first acid cleaning solution; cleaning the semiconductor substrate with an ultrasonic wave using a second cleaning solution after cleaning the semiconductor substrate with said first acid cleaning solution; and cleaning the semiconductor substrate using a third cleaning solution, which is alkaline, after cleaning the semiconductor substrate with an ultrasonic wave. | 08-27-2009 |
20110138553 | Cleaning apparatus and cleaning method for wafer - A wafer on which a CMP processing is completed is rotated. A front surface cleaning brush and a rear surface cleaning brush are made contact both surfaces of the wafer while being rotated. After the front surface cleaning brush and the rear surface cleaning brush are made to contact the wafer, both end portions of the front surface cleaning brush and the rear surface cleaning brush are deformed by means of pressurizing both ends of the front surface cleaning brush and the rear surface cleaning brush by pressure portions. That is, the both end portions of the front surface cleaning brush and the rear surface cleaning brush are compressed to enlarge diameters in the both end portions. As a consequence, the entire front surface of the wafer is made to contact the front surface cleaning brush substantially evenly, even if the wafer is warped into a shape of a mound. Therefore, a cleaning efficiency of the outer peripheral portion of the wafer improves. | 06-16-2011 |
20120171931 | POLISHING METHOD, POLISHING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A polishing method includes a first polishing step of halfway polishing a film to be polished formed on a substrate, and a second polishing step of further polishing the polished film, wherein a first film thickness profile showing an in-plane distribution of a film thickness of the polished film after the second polishing step for a first substrate is measured, and the first polishing step for a second substrate is executed to obtain a second film thickness profile which has a size relation in a film thickness opposite to the first film thickness profile. | 07-05-2012 |
20130012019 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes (a) depositing an insulating film on a semiconductor substrate; (b) forming a recess in the insulating film; (c) depositing a conductive film on the insulating film while filling the recess with the conductive film; and (d) polishing the conductive film. Step (d) includes a first polishing substep of using a first polisher pad conditioned with a first dresser and a second polishing substep of using a second polisher pad conditioned with a second dresser different from the first dresser. | 01-10-2013 |