Patent application number | Description | Published |
20100038712 | POWER SEMICONDUCTOR DEVICE - A semiconductor device according to an embodiment of the present invention includes a device part and a terminal part. The device includes a first semiconductor layer, and second and third semiconductor layers formed on the first semiconductor layer, and alternately arranged along a direction parallel to a surface of the first semiconductor layer, wherein the device part is provided with a first region and a second region, each of which includes at least one of the second semiconductor layers and at least one of the third semiconductor layers, and with regard to a difference value ΔN (=N | 02-18-2010 |
20100102381 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device according to an embodiment of the present invention includes a first semiconductor layer of a first conductivity type, second semiconductor layers of the first conductivity type and third semiconductor layers of a second conductivity type, which are formed on the first semiconductor layer, have stripe shapes extending in a first horizontal direction, and are alternately arranged along a second horizontal direction orthogonal to the first horizontal direction, a fourth semiconductor layer of the second conductivity type, selectively formed on a surface of one of the third semiconductor layers, a fifth semiconductor layer of the first conductivity type, selectively formed on a surface of the fourth semiconductor layer, and formed into a stripe shape extending in the first horizontal direction without being formed into a stripe shape extending in the second horizontal direction, and a control electrode formed on the second, third, fourth, and fifth semiconductor layers via an insulating layer, and having a plane pattern periodical in the first horizontal direction and the second horizontal direction. | 04-29-2010 |
20100187604 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed separately in the first semiconductor region. A difference between a charge quantity expressed by an integral value of a net activated doping concentration in the second semiconductor regions in the surface direction of the semiconductor substrate and a charge quantity expressed by an integral value of a net activated doping concentration in the first semiconductor region in the surface direction of the semiconductor substrate is always a positive quantity and becomes larger from the depth of the first junction plane to a depth of a second junction plane on an opposite side from the first junction plane. | 07-29-2010 |
20100230745 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device according to an embodiment of the present invention includes a first semiconductor layer of a first or second conductivity type, a second semiconductor layer of the first conductivity type formed on the first semiconductor layer, a third semiconductor layer of the second conductivity type selectively formed on a surface of the second semiconductor layer, at least one trench formed in a periphery of the third semiconductor layer on the surface of the second semiconductor layer, a depth of a bottom surface of the at least one trench being deeper than a bottom surface of the third semiconductor layer, and shallower than a top surface of the first semiconductor layer, and some or all of the at least one trench being in contact with a side surface of the third semiconductor layer, at least one insulator buried in the at least one trench, a first main electrode electrically connected to the first semiconductor layer, and a second main electrode electrically connected to the third semiconductor layer. | 09-16-2010 |
Patent application number | Description | Published |
20150189744 | THERMOSETTING RESIN COMPOSITION AND USAGE THEREOF - The present invention relates to a thermosetting resin composition, wherein the resin composition comprises of: (A) epoxy resin; (B) active ester curing agent; (C) poly-phosphonate ester and/or phosphonate-carbonate copolymer. The prepreg and copper clad laminate prepared with the thermosetting resin composition mentioned above has excellent dielectric performance, wet-heat resistance performance, and a flame resistance performance of UL 94 V-0 level. | 07-02-2015 |
20150189745 | EPOXY RESIN COMPOSITION, AND, PREPREG AND COPPER CLAD LAMINATE MANUFACTURED USING THE COMPOSITION - The present invention relates to an epoxy resin composition and a prepreg and a copper-clad laminate made by using same. The epoxy resin composition comprises components as follows: an epoxy resin containing 3 or more epoxy groups and containing nitrogen in the molecular chain, a phosphorus-containing halogen-free flame retardant compound and an active ester hardener; the amount of the epoxy resin containing 3 or more epoxy groups and containing nitrogen in the molecular chain is 100 parts by weight, the amount of the phosphorus-containing halogen-free flame retardant compound is 10-150 parts by weight. The equivalent ratio of the amount of the active ester hardener, based on the ratio between epoxy equivalent and active ester equivalent, is 0.85-1.2. The prepreg and the copper-clad laminate made by using the epoxy resin composition have excellent dielectric performance, moisture-heat resistant performance, simultaneously have a high glass transition temperature and a lower water absorption rate and simultaneously realize halogen-free flame retardancy, achieving UL-94V-0. | 07-02-2015 |
20150189747 | THERMOSETTING RESIN COMPOSITION AND USE THEREOF - The present invention relates to a thermosetting resin composition, which comprises: (A) cyanate ester compound and/or cyanate ester prepolymer; and (B) polyphosphonate ester and/or phosphonate-carbonate copolymer. The thermosetting resin composition provided by the present invention has low dielectric constant and dielectric loss tangent. The prepreg and copper clad laminate made from the above-mentioned thermosetting resin composition have excellent dielectric properties and wet-heat resistance, UL94 V-0 flame resistance, and good processability. | 07-02-2015 |
20150240055 | EPOXY RESIN COMPOUND AND PREPREG AND COPPER-CLAD LAMINATE MANUFACTURED USING THE COMPOUND - The present invention relates to an epoxy resin composition and a prepreg and a copper-clad laminate made by using same. The epoxy resin composition comprises components as follows: an epoxy resin containing 3 or more epoxy groups and containing nitrogen in the molecular chain, a phosphate salt compound and an active ester hardener; the amount of the epoxy resin containing 3 or more epoxy groups and containing nitrogen in the molecular chain is 100 parts by weight, the amount of the phosphate salt compound is 5˜50 parts by weight. The equivalent ratio of the amount of the active ester hardener, based on the ratio between epoxy equivalent and active ester equivalent, is 0.85˜1.2. The prepreg and the copper-clad laminate made by using the epoxy resin composition have excellent dielectric performance, moisture-heat resistant performance, simultaneously have a high glass transition temperature and a lower water absorption rate and simultaneously realize halogen-free flame retardancy, and achieve UL-94V-0. | 08-27-2015 |
Patent application number | Description | Published |
20140141704 | POLISHING PAD - A polishing pad includes at least a polishing layer including a groove, on a polishing surface, having side surfaces, wherein at least one of the side surfaces includes a first side surface that extends continuously to the polishing surface and forms an angle α with the polishing surface, and a second side surface that extends continuously to the first side surface and forms an angle β with a plane parallel to the polishing surface, the angle α is larger than 95 degrees, the angle β is larger than 95 degrees, and the angle β is smaller than the angle α, and a bending point depth from the polishing surface to a bending point between the first side surface and the second side surface is more than 0.2 mm and not more than 3.0 mm. | 05-22-2014 |
20140154962 | POLISHING PAD - A polishing pad includes at least a cushion layer and a polishing layer including a groove, on a polishing surface, having side surfaces and a bottom surface, wherein at least one of the side surfaces includes a first side surface that extends continuously to the polishing surface and forms an angle α with the polishing surface, and a second side surface that extends continuously to the first side surface and forms an angle β with a plane parallel to the polishing surface, the angle α is larger than 90 degrees, the angle β is not smaller than 85 degrees, and the angle β is smaller than the angle α, a bending point depth is not less than 0.4 mm and not more than 3.0 mm, and the cushion layer has a distortion constant of not less than 7.3×10 | 06-05-2014 |
20140170943 | POLISHING PAD - A polishing pad comprising at least a polishing layer and a cushion layer, wherein a groove is formed on a polishing surface of the polishing pad, at least one of angles formed by the polishing surface and a side surface of the groove which continues to the polishing surface is 105-150° inclusive, and the cushion layer has a strain constant of 7.3×10 | 06-19-2014 |