Nam-Young
Nam Young Cho, Seoul KR
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20100095517 | METHOD AND APPARATUS FOR MANUFACTURING METAL SEPARATOR FOR FUEL CELL - The present invention provides an apparatus and method for manufacturing a metal separator for a fuel cell, which can manufacture large-sized metal separators in large quantities using metal plates such as stainless steel by thermoplastic deformation using an incremental and synchronized rubber molding process. | 04-22-2010 |
20120291513 | METHOD AND APPARATUS FOR MANUFACTURING METAL SEPARATOR FOR FUEL CELL - The present invention provides an apparatus and method for manufacturing a metal separator for a fuel cell, which can manufacture large-sized metal separators in large quantities using metal plates such as stainless steel by thermoplastic deformation using an incremental and synchronized rubber molding process. | 11-22-2012 |
Nam Young Kim, Gunpo-Si KR
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20130126260 | POWER STEERING SYSTEM FOR VEHICLE - A power steering device of a vehicle is provided to minimize a rattle noise and improve a steering feel. The power steering device of a vehicle may include a worm gear that is rotated by a motor, a worm wheel that is connected to a steering wheel to be rotated by the rotation of the worm gear, an elastic member that applies a load to the worm gear such that the worm gear contacts the worm wheel, and an operating portion that selectively varies the load of the elastic member that is applied to the worm gear. | 05-23-2013 |
20130151077 | SYSTEM AND METHOD FOR CONTROLLING ELECTRICALLY-POWERED STEERING APPARATUS OF VEHICLE - A system and a method for controlling an electrically-powered steering apparatus of a vehicle may include a selection switch adapted to select any of a plurality of steering modes, a control switch adapted to change a current for controlling the steering force, a control portion adapted to determine the current according to a signal received from at least one of the selection switch and the control switch and to transmit a control signal according to the determined current, and a drive portion adapted to control the steering force according to the control signal received from the control portion. | 06-13-2013 |
Nam Young Kim, Daejeon KR
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20110142005 | METHOD AND SYSTEM FOR FAST LAYER 3 HAND-OVER - The present invention relates to a method of seamlessly providing a satellite multimedia Internet service to a fixed subscriber belonging to a lower user network even in a satellite shadow environment and shortening a hand-over processing time between heterogeneous networks by applying a fast layer 3 hand-over technology between satellite and wireless networks in a mobile satellite terminal device. | 06-16-2011 |
Nam Young Lee, Gyeonggi-Do KR
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20140151991 | BOLTING STRUCTURE OF SUB-FRAME - A bolting structure of a sub-frame includes a reinforcer mounting the sub-frame through a side member. The reinforcer includes: a reinforcing member disposed to intersect with the side member in a cross shape and bolted, together with the side member, to a lower panel; an inner pipe disposed at the side member from surfaces interfacing between the reinforcing member and the side member; an outer pipe disposed at the reinforcing member from the surfaces interfacing between the reinforcing member and the side member and inserted into the sub-frame; and a bolt bolted to the inner pipe through the outer pipe and fixing the sub-frame. | 06-05-2014 |
Nam Young Ryu, Seoul KR
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20130237153 | MOBILE DEVICE AND MANAGING METHOD THEREOF - A mobile device and a method for managing the power consumption of the mobile device use geomagnetic sensors to determine if an external object is present. If an external object is approaching the mobile device, a near field communication unit is powered on and may communicate with the external object. Additional sensors may determine if the external object may be capable of NFC. Other components of the device may be powered on or off according to the presence of the external device. | 09-12-2013 |
Nam-Young Cho, Suwon-Si KR
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20100009097 | Deposition Apparatus and Deposition Method Using the Same - A deposition apparatus includes a gas inflow tube, a plasma electrode, a substrate support functioning as an opposite electrode to the plasma electrode and mounting a substrate thereon, a plasma connector terminal connected to the plasma electrode, a first voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a continuous mode, and a second voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a pulse mode. The voltage applied by the first voltage application unit is an RF voltage of about 13.56 MHz, and the voltage applied by the second voltage application unit is a VHF voltage ranged from about 27 MHz to about 100 MHz. | 01-14-2010 |
Nam-Young Kim, Gyeonggi-Do KR
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20110015926 | WORD DETECTION FUNCTIONALITY OF A MOBILE COMMUNICATION TERMINAL - Voice communication by first and second users in a voice communication session that facilitates communication between a first device through which a first user communicates and a second device through which a second user communicates is enabled. Words spoken in the voice communication session between the first device and the second device are monitored. Presence of one or more key words as a subset of less than all of the monitored spoken in the voice communication session is determined from the monitored words spoken in the voice communication session. The one or more key words are displayed on a display screen. | 01-20-2011 |
20110053552 | PROVIDING ROUTING TO A MOBILE TERMINAL - A selection associated with a service provider is received at a user device, the service provider being associated with a first location. A second location that is associated with the user is determined at the user device. A service request and the determined second location associated with the user are sent from the user device and to a destination associated with the service provider. A route between the first and second locations to be used by the service provider is received from the service provider. A map including the route between the first and second locations to be used by the service provider is rendered on the user device. | 03-03-2011 |
Nam-Young Kim, Seoul KR
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20090179219 | SIDE VIEW TYPE LED PACKAGE - In a side view type light emitting diode (LED) package, a lead frame portion and lead frame electrical contact portions are exposed outside a package body to serve as an additional heat dissipation path. The side view type LED package includes an LED chip, a package body having a side surface with an opening for receiving the LED chip, and lead frames for applying a current to the LED chip. The lead frames include inner leads electrically connected to the LED chip within the package body; electrical contact lower legs extending from the inner leads to a lower portion of the package body and exposed outside the package body in the vicinity of a lower surface of the package body perpendicular to the side surface; and a heat dissipation means extending, separately from the electrical contact lower legs, from at least one of the inner leads outside the package body. | 07-16-2009 |
20100301376 | SIDE VIEW TYPE LED PACKAGE - In a side view type light emitting diode (LED) package, a lead frame portion and lead frame electrical contact portions are exposed outside a package body to serve as an additional heat dissipation path. The side view type LED package includes an LED chip, a package body having a side surface with an opening for receiving the LED chip, and lead frames for applying a current to the LED chip. The lead frames include inner leads electrically connected to the LED chip within the package body; electrical contact lower legs extending from the inner leads to a lower portion of the package body and exposed outside the package body in the vicinity of a lower surface of the package body perpendicular to the side surface; and a heat dissipation means extending, separately from the electrical contact lower legs, from at least one of the inner leads outside the package body. | 12-02-2010 |
20110088066 | NAVIGATION METHOD OF MOBILE TERMINAL AND APPARATUS THEREOF - A method of controlling a television receiver, and which includes receiving, via an input unit, an automatic channel setting command for automatically setting channels; searching, via a processor, television broadcast channels including television airwave and cable channels and media sources different than the television airwave and cable channels; and assigning, via the processor, preset channels to the television broadcast channels and assigning non-preset channels to the media sources found in the searching step. | 04-14-2011 |
20130206514 | WORMGEAR SHAPED DRIVING PART, ELEVATOR USING WORMGEAR SHAPED DRIVING PART AND ELEVATING SYSTEM - An elevator moving along an elevator shaft in a building, comprises a car for transport, a worm driving part moving together with the car, a rotating axis of which is parallel to a moving path of the car, and a worm support part including supporting teeth installed in the elevator shaft along the moving path of the car in accordance with worm teeth of the worm driving part. Using the worm driving part and the worm support part mutually interacting, the elevator can go up and down, and the worm driving part and the worm support part keep low frictional resistance to improve an efficiency of lifting. | 08-15-2013 |
Nam-Young Kim, Busan KR
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20090317890 | FIBRIONOLYTIC METALLOPROTEASE AND COMPOSITION COMPRISING THE SAME - The present invention relates to a novel protease, a polynucleotide encoding the protease, and a fibrinolytic agent comprising the same. The protease is obtained from a new gene source by using metagenomic library technology, and can replace the conventional fibrinolytic agent. | 12-24-2009 |
Nam-Young Lee, Hwaseong-Si US
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20140084332 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - According to example embodiments of inventive concepts: a semiconductor device includes: first and second trench gates extending long in one direction in a substrate; third and fourth trench gates in the substrate, the third and fourth trench gates connecting the first and second trench gates with each other; a first region defined in the substrate by the first to fourth trench gates and surrounded by the first to fourth trench gates; and a second region and a third region defined in the substrate. The second region is in surface contact with the first region. The third region is in point contact with the first region. The first region includes a first high-voltage semiconductor device including a body of a first conduction type and an emitter of a second conduction type in the body. Floating wells of the first conduction type are in the second region and the third region. | 03-27-2014 |
Nam-Young Lee, Hwaseong-Si KR
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20120286324 | MANUFACTURING METHOD FOR INSULATED-GATE BIPOLAR TRANSITOR AND DEVICE USING THE SAME - Provided is a manufacturing method for an insulated-gate bipolar transistor (IGBT). The manufacturing method includes providing a structure including a substrate, a first conductivity type epitaxial layer formed on the substrate, a gate electrode formed on a first surface of the epitaxial layer, a second conductivity type body region formed at opposite sides of the gate electrode in the first surface of the epitaxial layer, and a first conductivity type source region formed within the body region; removing a portion of the substrate by back grinding; and removing the other portion of the substrate by etching until the second surface of the epitaxial layer is exposed. | 11-15-2012 |
20130200427 | TRANSISTORS AND METHODS OF MANUFACTURING THE SAME - A transistor includes a device portion and a collector layer. The device portion is in a first side of a semiconductor substrate, and includes a gate and an emitter. The collector layer is on a second side of the semiconductor substrate, which is opposite to the first side. The collector layer is an impurity-doped epitaxial layer and has a doping profile with a non-normal distribution. | 08-08-2013 |
20140252368 | HIGH-ELECTRON-MOBILITY TRANSISTOR - A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern. | 09-11-2014 |
20140252369 | NITRIDE-BASED SEMICONDUCTOR DEVICE - A nitride-based semiconductor device including a substrate; a GaN-containing layer on the substrate; a nitride-containing layer on the GaN layer; a channel blocking layer on the nitride-containing layer, the channel blocking layer including a nitride-based semiconductor; a gate insulation layer on the channel blocking layer; and a gate electrode on the gate insulation layer. | 09-11-2014 |
20140253241 | HIGH ELECTRON MOBILITY TRANSISTOR DEVICE - A high electron mobility transistor (HEMT) device includes a buffer layer on a substrate; a face-inversion layer on a part of the buffer layer; a plurality of semiconductor layers on the face-inversion layer and on the buffer layer; and a source electrode, a drain electrode, and a gate electrode on the plurality of semiconductor layers. The HMT device has a stable, normally Off characteristic. | 09-11-2014 |
Nam-Young Lee, Yongin-Si KR
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20100258867 | Semiconductor device - A semiconductor device comprises a substrate and a gate which extends on the substrate in a first horizontal direction. A source region is positioned at a first side of the gate and extends in the first direction. A body region of a first conductivity type is under the source region and extends in the first direction. A drain region of a second conductivity type is at a second side of the gate and extends in the first direction. A drift region of the second conductivity type extends between the body region and the drain region in the substrate in a second horizontal direction. A first buried layer is under the drift region in the substrate, the first buried layer extending in the first and second directions. A plurality of second buried layers is between the first buried layer and the drift region in the substrate. The second buried layers extend in the second direction and are spaced apart from each other in the first direction. | 10-14-2010 |