Patent application number | Description | Published |
20090058894 | LIQUID EJECTING DEVICE - A liquid ejecting device is provided. The liquid ejecting device includes: a liquid ejecting head configured to eject a liquid; a liquid supply channel configured to supply the liquid to the liquid ejecting head; a discharge channel communicating with the liquid supply channel through a communicating portion; a suction unit connected to the discharge channel so as to perform a suction operation of suctioning gas from the discharge channel; a gas permeable film disposed in the communicating portion between the liquid supply channel and the discharge channel; a vibration driving unit configured to vibrate the gas permeable film; and a controller configured to control the suction unit and the vibration driving unit. | 03-05-2009 |
20100128084 | Suction Cap Device and Liquid Jetting Apparatus Provided with the Same - A suction cap device includes a cap member which is formed of an elastic member, which is formed to have a recessed portion, and which has a suction port formed in a bottom surface of the cap member to be located inside of the recessed portion; a suction mechanism which communicates with the suction port; and a cap protector which is accommodated in the recessed portion of the cap member, and which prevents the cap member from being deformed when a pressure inside the recessed portion is decreased. In a liquid flow passage formed in the cap protector, a lead-in port formed in the cap protector has a diameter which is greater than a diameter of a lead-out port formed in the cap protector. With this, it is possible to quickly discharge a liquid received in the cap member. | 05-27-2010 |
20110242207 | LIQUID-DROPLET JETTING APPARATUS - A liquid-droplet jetting apparatus which jets a liquid droplet of a liquid, includes: a liquid-droplet jetting head which has a nozzle for jetting the liquid droplet of the liquid; a maintenance mechanism which includes: a suction cap which comes into contact with and separates from the liquid-droplet jetting head and which faces the nozzle; a suction pump which sucks a fluid in a space defined by the suction cap and the liquid-droplet jetting head in a state that the suction cap comes into contact with the liquid-droplet jetting head; and a discharge tube which is connected to the suction pump and discharges the fluid flowing through the suction pump; and a maintenance controller which controls the maintenance mechanism. | 10-06-2011 |
20120075364 | INK-JET PRINTER AND METHOD FOR REPLACING FILLING LIQUID IN INK-JET HEAD - There is provided an ink-jet printer including: an ink supply source; an ink-jet head in which a plurality of nozzle groups corresponding to a plurality of color inks are formed; a maintenance mechanism; a controller which controls the ink-jet head and the maintenance mechanism; and a filling liquid filled in the ink jet head in a state before the ink-jet printer is used for the first time, wherein, in the state before the ink-jet primer is used for the first time, the controller controls the maintenance mechanism and the ink-jet head to perform an initial discharge operation; and an amount of a liquid discharged from the ink-jet head during the initial discharge operation is adjusted based on a color difference between one of the plurality of color inks and a replaced-ink. | 03-29-2012 |
20130033542 | LIQUID JETTING APPARATUS AND CAP MEMBER - A liquid jetting apparatus includes: a liquid jetting head which has a liquid jetting surface including a nozzle placement region at which a plurality of nozzles are open; a cap member which covers the nozzles and which includes a bottom wall and a loop-shaped lip portion provided upright on an outer peripheral portion of the bottom wall to come into close contact with the liquid jetting surface, the bottom wall having a first region which covers the nozzle placement region and a second region which extends out from the first region and does not face the nozzle placement region; a cap driving mechanism which moves the cap member to make contact with or separate from the liquid jetting surface; and a recovery mechanism which is connected to the cap member and performs a recovery operation in a state in which the cap member makes contact with the liquid jetting surface. | 02-07-2013 |
Patent application number | Description | Published |
20090184340 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - A semiconductor device is provided in which a semiconductor substrate can be prevented from being broken while elements can be prevented from being destroyed by a snap-back phenomenon. After an MOS gate structure is formed in a front surface of an FZ wafer, a rear surface of the FZ wafer is ground. Then, the ground surface is irradiated with protons and irradiated with two kinds of laser beams different in wavelength simultaneously to thereby form an N | 07-23-2009 |
20090206398 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE - A semiconductor device including an n-type semiconductor substrate, a p-type channel region and a junction layer provided between the n-type semiconductor substrate and the p-type channel region is disclosed. The junction layer has n-type drift regions and p-type partition regions alternately arranged in the direction in parallel with the principal surface of the n-type semiconductor substrate. The p-type partition region forming the junction layer is made to have a higher impurity concentration than the n-type drift region. This enables the semiconductor device to have an enhanced breakdown voltage and, at the same time, have a reduced on-resistance. | 08-20-2009 |
20100173476 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device according to the invention irradiates a first pulse laser beam with an irradiation energy density of 1.0 J/cm | 07-08-2010 |
20110318910 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device that sufficiently activates a deep ion injection layer and fully recovers lattice defects generated in the ion injection process. Laser light pulses are successively emitted to form substantially CW (continuous wave) laser light. This feature of the invention stably performs activation of a deep ion injection layer at about 2 μs with few defects. | 12-29-2011 |
20120064706 | SEMICONDCUTOR DEVICE AND METHOD OF PRODUCING THE SAME - A semiconductor device is provided in which a semiconductor substrate can be prevented from being broken while elements can be prevented from being destroyed by a snap-back phenomenon. After an MOS gate structure is formed in a front surface of an FZ wafer, a rear surface of the FZ wafer is ground. Then, the ground surface is irradiated with protons and irradiated with two kinds of laser beams different in wavelength simultaneously to thereby form an N | 03-15-2012 |
20120098085 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device, and method of manufacturing the device, having a p type diffusion layer; a V-groove including a bottom surface parallel to the rear surface and exposing the p type diffusion layer and a tapered side surface rising from the bottom surface; a p type semiconductor layer on the rear surface surrounded by the tapered side surface of the V-groove; and a p type isolation layer formed on the side surface and electrically connecting the p type diffusion layer on the front surface and the p type semiconductor layer on the rear surface. The V-groove has a chamfered configuration around the intersection between a corner part of the side surface and the bottom surface of the V-groove. An object is to prevent performance degradation due to stress concentration at the corner part of a recessed part caused by thermal history in soldering. | 04-26-2012 |
20120329257 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device, the method including forming a front face structure of a semiconductor device on a first main face of a semiconductor substrate, grinding a second main face of the semiconductor substrate and reducing the semiconductor substrate in thickness to a thickness equal to or less than 100 μm, ion implanting a dopant into the second main face of the semiconductor substrate of reduced thickness, and activating the dopant by irradiating the second main face with laser light and performing laser annealing while the semiconductor substrate of reduced thickness is heated. | 12-27-2012 |
20130196457 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In some aspects of the invention, a circuit pattern of a front surface structure is formed in a front surface of a semiconductor wafer and an alignment mark is formed on the front surface of a semiconductor wafer. A transparent supporting substrate is attached to the front surface of the semiconductor wafer by a transparent adhesive. Then, a resist is applied onto a rear surface of the semiconductor wafer. Then, the semiconductor wafer is mounted on a stage of an exposure apparatus, with the supporting substrate down. Then, the alignment mark formed on the front surface of the semiconductor wafer is recognized by a camera, and the positions of the semiconductor wafer and a photomask are aligned with each other. Then, the resist is patterned. Then, a circuit pattern is formed in the rear surface of the semiconductor wafer. | 08-01-2013 |
20130260540 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A reverse blocking IGBT is manufactured using a silicon wafer sliced from a single crystal silicon ingot which is manufactured by a floating method using a single crystal silicon ingot manufactured by a Czochralski method as a raw material. A separation layer for ensuring a reverse blocking performance of the reverse blocking IGBT is formed by diffusing impurities implanted into the silicon wafer using a thermal diffusion process. The thermal diffusion process for forming the separation layer is performed in an inert gas atmosphere at a temperature equal to or more than 1290° C. and less than the melting point of silicon. In this way, no crystal defect occurs in the silicon wafer and it is possible to prevent the occurrence of a reverse breakdown voltage defect or a forward defect in the reverse blocking IGBT and thus improve the yield of a semiconductor element. | 10-03-2013 |
20130295729 | METHOD FOR MANUFACTURING REVERSE-BLOCKING SEMICONDUCTOR ELEMENT - In a method of manufacturing a reverse-blocking semiconductor element, a tapered groove is formed and ions are implanted into a rear surface and the tapered groove. Then, a furnace annealing process and a laser annealing process are performed to form a rear collector layer and a separation layer on the side surface of the tapered groove. In this way, it is possible to ensure a reverse breakdown voltage and reduce a leakage current when a reverse bias applied, even in a manufacturing method including a process of manufacturing a diffusion layer formed by forming a tapered groove and performing ion implantation and an annealing process for the side surface of the tapered groove as the separation layer for bending the termination of a reverse breakdown voltage pn junction to extend to the surface. | 11-07-2013 |
20140001487 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE | 01-02-2014 |
20140061672 | SEMICONDUCTOR DEVICE - A semiconductor device includes an active region in which current flows when the semiconductor device is in an on state and a breakdown voltage structure portion which surrounds the active region. In the active region, a MOS gate structure includes, a p well region, an n | 03-06-2014 |
20140377938 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A method for producing a semiconductor device is disclosed which includes a diffusion step of forming, on a CZ-FZ silicon semiconductor substrate, a deep diffusion layer involving a high-temperature and long-term thermal diffusion process which is performed at a thermal diffusion temperature of 1290° C. to a melting temperature of a silicon crystal for 100 hours or more; and a giving step of giving a diffusion source for an interstitial silicon atom to surface layers of two main surfaces of the silicon semiconductor substrate before the high-temperature, long-term thermal diffusion process. The step of giving the diffusion source for the interstitial silicon atom to the surface layers of the two main surfaces of the silicon semiconductor substrate is performed by forming thermally-oxidized films on two main surfaces of the silicon semiconductor substrate or by implanting silicon ions into surface layers of the two main surfaces of the silicon semiconductor substrate. | 12-25-2014 |
20150031175 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device, includes providing a silicon semiconductor substrate which is manufactured by a floating zone method; and performing thermal diffusion at a heat treatment temperature that is equal to or higher than 1290° C. and that is lower than a melting temperature of a silicon crystal to form a diffusion layer with a depth of 50 μm or more in the silicon semiconductor substrate, the thermal diffusion including a first heat treatment performed in an oxygen atmosphere or a mixed gas atmosphere of oxygen and inert gas, and a second heat treatment performed in a nitrogen atmosphere or a mixed gas atmosphere of nitrogen and oxygen to form the diffusion layer. The method suppresses the occurrence of crystal defects, reduces the amount of inert gas used, and reduces manufacturing costs. | 01-29-2015 |
Patent application number | Description | Published |
20100264455 | SEMICONDUCTOR DEVICE - On the top surface of a thin semiconductor wafer, top surface structures forming a semiconductor chip are formed. The top surface of the wafer is affixed to a supporting substrate with a double-sided adhesive tape. Then, from the bottom surface of the thin semiconductor wafer, a trench, which becomes a scribing line, is formed by wet anisotropic etching so that side walls of the trench are exposed. On the side walls of the trench with the crystal face exposed, an isolation layer with a conductivity type different from that of the semiconductor wafer for holding a reverse breakdown voltage is formed simultaneously with a collector region of the bottom surface diffused layer by ion implantation, followed by annealing with laser irradiation. The side walls form a substantially V-shaped or trapezoidal-shaped cross section, with an angle of the side wall relative to the supporting substrate being 30-70°. The double-sided adhesive tape is then removed from the top surface to produce semiconductor chips. With such a manufacturing method, a reverse-blocking semiconductor device having high reliability can be formed. | 10-21-2010 |
20110081752 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A thin semiconductor wafer, on which a top surface structure and a bottom surface structure that form a semiconductor chip are formed, is affixed to a supporting substrate by a double-sided adhesive tape. Then, on the thin semiconductor wafer, a trench to become a scribing line is formed by wet anisotropic etching with a crystal face exposed so as to form a side wall of the trench. On the side wall of the trench with the crystal face thus exposed, an isolation layer for holding a reverse breakdown voltage is formed by ion implantation and low temperature annealing or laser annealing so as to be extended to the top surface side while being in contact with a p collector region as a bottom surface diffused layer. Then, laser dicing is carried out to neatly dice a collector electrode, formed on the p collector region, together with the p collector region, without presenting any excessive portions and any insufficient portions under the isolation layer. Thereafter, the double-sided adhesive tape is removed from the collector electrode to produce semiconductor chips. A highly reliable reverse-blocking semiconductor device can thus be formed at a low cost. | 04-07-2011 |
20110207267 | REVERSE BLOCK-TYPE INSULATED GATE BIPOLAR TRANSISTOR MANUFACTURING METHOD - A reverse block-type insulated gate bipolar transistor (IGBT) manufacturing method that, when manufacturing a reverse block-type IGBT having a separation layer formed along tapered surfaces of a V-shaped groove formed using anisotropic etching, can secure a highly reliable reverse pressure resistance, and suppress a leakage current when reverse biasing. When irradiating with a flash lamp for flash lamp annealing after implantation of ions into a second conductivity type separation layer and second conductivity type collector layer to form the second conductivity type collector layer and second conductivity type separation layer, the strongest portion of radiation energy is focused on a depth position from the upper portion to the central portion of a tapered side edge surface. | 08-25-2011 |
20120184083 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A thin semiconductor wafer, on which a top surface structure and a bottom surface structure that form a semiconductor chip are formed, is affixed to a supporting substrate. Then, on the wafer, a trench to become a scribing line is formed with a crystal face exposed so as to form a side wall of the trench. On that side wall, an isolation layer for holding a reverse breakdown voltage is formed by ion implantation and low temperature annealing or laser annealing so as to be extended to the top surface side while being in contact with a p collector region as a bottom surface diffused layer. Then, laser dicing is carried out to dice a collector electrode, formed on the p collector region, together with the p collector region. | 07-19-2012 |
20130344663 | REVERSE BLOCK-TYPE INSULATED GATE BIPOLAR TRANSISTOR MANUFACTURING METHOD - A reverse block-type insulated gate bipolar transistor (IGBT) manufacturing method that, when manufacturing a reverse block-type IGBT having a separation layer formed along tapered surfaces of a V-shaped groove formed using anisotropic etching, can secure a highly reliable reverse pressure resistance, and suppress a leakage current when reverse biasing. When irradiating with a flash lamp for flash lamp annealing after implantation of ions into a second conductivity type separation layer and second conductivity type collector layer to form the second conductivity type collector layer and second conductivity type separation layer, the strongest portion of radiation energy is focused on a depth position from the upper portion to the central portion of a tapered side edge surface. | 12-26-2013 |
20140327041 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A thin semiconductor wafer, on which a top surface structure and a bottom surface structure that form a semiconductor chip are formed, is affixed to a supporting substrate by a double-sided adhesive tape. Then, on the thin semiconductor wafer, a trench to become a scribing line is formed by wet anisotropic etching with a crystal face exposed so as to form a side wall of the trench. On the side wall of the trench with the crystal face thus exposed, an isolation layer for holding a reverse breakdown voltage is formed by ion implantation and low temperature annealing or laser annealing so as to be extended to the top surface side while being in contact with a p collector region as a bottom surface diffused layer. Then, laser dicing is carried out to neatly dice a collector electrode, formed on the p collector region, together with the p collector region, without presenting any excessive portions and any insufficient portions under the isolation layer. Thereafter, the double-sided adhesive tape is removed from the collector electrode to produce semiconductor chips. A highly reliable reverse-blocking semiconductor device can thus be formed at a low cost. | 11-06-2014 |
Patent application number | Description | Published |
20100289210 | IMAGE FORMING APPARATUS - An image forming apparatus includes an image forming unit; a conveyance unit; a motor; a stop order unit that orders stoppage of the motor; a detection unit, which detects a rotated number of the motor or a conveyance distance during a post-order period, and the post-order period being a period from when the stop order unit ordered stoppage of the motor until when the motor stops; a storage unit; a sensor, which detects passage of the recording medium; a timing determination unit, which determines a pre-order period as a appropriate order timing, wherein the pre-order period is calculated from dividing a difference between a first distance and a second distance by a conveyance speed, wherein the first distance is the conveyance distance stored in the storage, and the second distance is a distance between a position where the sensor detects passage of the recording medium and the target stoppage position. | 11-18-2010 |
20110241760 | CONTROL CIRCUIT, CONTROL DEVICE, CONTROL METHOD, AND IMAGE FORMING APPARATUS - A control circuit comprising an input-output unit that is connected to a signal line, which is connected to an external apparatus, and which is connected to a resistor that is one of a pull-up resistor and a pull-down resistor; a switching unit that switches a mode of the input-output unit to one of an input mode and an output mode, wherein the output mode includes an on-voltage output mode and an off-voltage output mode; an acquisition unit that acquires information regarding whether the resistor connected to the signal line is the pull-up resistor or the pull-down resistor, when the input-output unit is in the input mode; and a control unit that controls the input-output unit to switch to one of the on-voltage output mode and the off-voltage output mode based on the acquisition information acquired by the acquisition unit, when the input-output unit is in the output mode. | 10-06-2011 |
Patent application number | Description | Published |
20100225774 | SOLID-STATE IMAGE PICKUP ELEMENT, A METHOD OF MANUFACTURING THE SAME AND ELECTRONIC APPARATUS USING THE SAME - Disclosed herein is a solid-state image pickup element, including a plurality of pixels each having a photoelectric conversion portion for converting a quantity of incident light into an electric signal, and a plurality of pixel transistors; wiring layers formed on one surface side of a semiconductor substrate having the plurality of pixels formed therein, a light made incident from a side opposite to the one surface having the wiring layers formed thereon being received by corresponding one of the photoelectric conversion portions; a scribe line formed in a periphery of a pixel portion composed of the plurality of pixels; and square-shaped termination detecting portions each having higher hardness than that of the semiconductor substrate and formed in the scribe line; wherein each of the square-shaped termination detecting portions has a side parallel with a direction of the scribe line of the semiconductor substrate. | 09-09-2010 |
20100230773 | SOLID-STATE IMAGE PICKUP DEVICE AND A METHOD OF MANUFACTURING THE SAME - A solid-state image pickup device includes: a silicon layer; a pixel portion formed in the silicon layer for processing and outputting signal charges obtained by carrying out photoelectric conversion for incident lights; an alignment mark formed in a periphery of the pixel portion and in the silicon layer; and a contact portion through which a first electrode within a wiring layer formed on a first surface of the silicon layer, and a second electrode formed on a second surface opposite to the first surface of the silicon layer through an insulating film are connected, wherein the alignment mark and the contact portion are formed from conductive layers made of the same conductive material and formed within respective holes each extending completely through the silicon layer through respective insulating layers made of the same material. | 09-16-2010 |
20120313211 | SOLID-STATE IMAGE PICKUP DEVICE AND A METHOD OF MANUFACTURING THE SAME - A solid-state image pickup device includes: a silicon layer; a pixel portion formed in the silicon layer for processing and outputting signal charges obtained by carrying out photoelectric conversion for incident lights; an alignment mark formed in a periphery of the pixel portion and in the silicon layer; and a contact portion through which a first electrode within a wiring layer formed on a first surface of the silicon layer, and a second electrode formed on a second surface opposite to the first surface of the silicon layer through an insulating film are connected, wherein the alignment mark and the contact portion are formed from conductive layers made of the same conductive material and formed within respective holes each extending completely through the silicon layer through respective insulating layers made of the same material. | 12-13-2012 |
Patent application number | Description | Published |
20090036629 | POLYSILAZANE PERHYDRIDE SOLUTION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film. | 02-05-2009 |
20100190317 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILICON OXIDE FILM FORMING METHOD - A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches. | 07-29-2010 |
20100311220 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND NAND-TYPE FLASH MEMORY - A method for manufacturing semiconductor device has forming a plurality of trenches having at least two kinds of aspect ratios on a semiconductor substrate, filling the plurality of trenches with a coating material containing silicon, forming a mask on the coating material in a part of the trenches among the plurality of trenches filled with the coating material, implanting an ion for accelerating oxidation of the coating material into the coating material in the trenches on which the mask is not formed, forming a first insulating film by oxidizing the coating materials into which the ion is implanted, removing the coating material from the part of the trenches after removing the mask and forming a second insulating film in the part of the trenches from which the coating material is removed. | 12-09-2010 |
20120034754 | SEMICONDUCTOR DEVICE MANUFACATURING METHOD AND SILICON OXIDE FILM FORMING METHOD - A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches. | 02-09-2012 |
20120193596 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In accordance with an embodiment, a semiconductor device includes a functional film, first and second trenches, and first and second insulating films. The functional film comprises first and second areas. The first trench is provided in the first area of the functional film and has a first width. The second trench is provided in the second area of the functional film and has a second width larger than the first width. The first insulating film is formed from a polymeric material as a precursor to fill the first trench. The second insulating film has a diameter larger than the first width and is formed from particulates and the polymeric material as precursors. The particulates fill the second trench. The polymeric material fills spaces between the particulates in the second trench and also fills gaps between the particulates and the second trench. | 08-02-2012 |
20130043563 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, there is provided a method of manufacturing a semiconductor device. In the method, a substrate portion and a fin portion on the substrate portion are formed. A first silicon oxide film is formed on each side surface of the fin portion. A polysilazane film having an upper surface lower than the upper surface of the first silicon oxide film is formed on each side surface of the first silicon oxide film. The polysilazane film is converted into a silicon oxynitride film. The first silicon oxide film is etched to make the upper surface of the first silicon oxide film not higher than the upper surface of the silicon oxynitride film. A heavily doped semiconductor layer is formed in the fin portion. | 02-21-2013 |
20130102124 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In one embodiment, a method of manufacturing a semiconductor device includes forming an isolation trench in a substrate, and forming an amorphous layer on a sidewall surface of the isolation trench. The method further includes forming a sacrificial layer in the isolation trench via the amorphous layer, and forming an air gap layer on the sacrificial layer. The method further includes forming an air gap in the isolation trench under the air gap layer by removing the sacrificial layer after forming the air gap layer. | 04-25-2013 |
20130115766 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method, a tunnel insulating film and a first conductive film are formed on a semiconductor layer. A trench is formed. A first sacrifice film is buried in the trench. A second sacrifice film having density higher than that of the first sacrifice film is formed on the first sacrifice film in the trench. An insulating film is formed on the first conductive film and the second sacrifice film. A second conductive film is formed on the insulating film. The second sacrifice film is exposed. The first sacrifice film and the second sacrifice film are removed. | 05-09-2013 |
20140137796 | SPIN COATING METHOD AND SPIN COATING APPARATUS - A spin coating apparatus that supplies a coating liquid to a substrate and rotating the substrate to form a coating film, has a holding part that holds the substrate mounted thereon in a horizontal position; a rotationally driving source that rotationally drives the holding part about a rotational axis parallel with the vertical direction, thereby rotating the substrate; and a coating liquid supplying part that supplies the coating liquid to the substrate held by the holding part. | 05-22-2014 |
Patent application number | Description | Published |
20080218547 | INK JET PRINTING APPARATUS AND INK JET PRINTING METHOD - An ink jet printing apparatus and method are provided which can satisfy in a well-balanced manner both an improvement of image uniformity and a reduction in glossiness variations. A plurality of print modes are prepared which include: a first print mode to perform a printing operation in a way that makes equal print ratios of the plurality of nozzle arrays; and a second print mode to perform a printing operation in a way that makes a print ratio of at least one of nozzle arrays situated at ends of the plurality of nozzle arrays smaller than print ratios of other nozzle arrays. The user selects from the plurality of print modes an appropriate one that strikes a balance between uniformity and glossiness and thereby can achieve a desired quality of image. | 09-11-2008 |
20100156980 | INKJET PRINTING APPARATUS, INKJET PRINTING SYSTEM, AND INKJET PRINTING METHOD - An inkjet printing apparatus, an inkjet printing system and an inkjet printing method are provided in order to correct a print density at a joint (overlapped portion) of nozzle arrays of a print head. The print density at the joint (overlapped portion) of the nozzle arrays is corrected based on a positional deviation between two adjacent nozzle arrays of the print head. | 06-24-2010 |
20100328387 | PRINTING APPARATUS AND PRINTING METHOD - Each of four areas of 2×2 in one pixel has four sub areas and the four sub areas correspond to four nozzle arrays A to D. In the sub area of each area, information showing what nozzle array is used for a print of the area is defined. The sub area filled in black shows performing therein a print of a dot using nozzles in the nozzle array corresponding to the sub area. In this way, the dot arrangement pattern has information showing the nozzle array to which nozzles used for printing an area belong, for each area. Therefore, without executing the particular data allocation processing such as mask processing, the allocation of the dot data to the plurality of nozzle arrays can be carried out with a simple arrangement. | 12-30-2010 |
20110063366 | INK JET RECORDING APPARATUS - An inkjet recording apparatus efficiently recovers defective discharge while reducing the amount of waste ink, acquires position information of a defective discharge nozzle and, based on the position information, determines whether the defective discharge has been caused by a bubble or a dust particle, and selects an ink circulation mode or a wiping mode. | 03-17-2011 |
20110298853 | PRINTING APPARATUS AND PROCESSING METHOD THEREOF - A printing apparatus includes a plurality of full-line type printheads. The printing apparatus holds information relating to overlap nozzles that overlap between a reference printhead and an adjustment printhead, generates discharge data for causing a tilt adjustment pattern to be printed by nozzles disposed in different positions in the overlap nozzles that overlap between the reference printhead and the adjustment printhead, and causes ink to be discharged from the nozzles in the overlap nozzles that overlap between the reference printhead and the adjustment printhead based on the discharge data. In this manner, the tilt adjustment pattern is printed on a printing medium. | 12-08-2011 |
20120243005 | INK JET RECORDING APPARATUS AND RECORDING METHOD - A recording apparatus includes a processing unit configured to convert acquired image information into dot data, and an image forming unit configured to form an image on a recording medium based on the image information converted into dot data by the processing unit, wherein the processing unit enlarges an image of the acquired image information to a size protruding into margins formed at both side ends of the recording medium, then converts the image information into dot data, and then, based on side end position information of the recording medium detected by the detection unit, processes the image information converted into dot data so that image formation is not performed on portions of the enlarged image protruding into the margins. | 09-27-2012 |
20130135371 | INK JET RECORDING APPARATUS - An ink jet recording apparatus includes a recording head and a driving unit. The recording head includes a plurality of element columns. Each element column includes a plurality of recording elements arrayed in a first direction to discharge ink, and is divided into a plurality of groups including a plurality of continuous recording elements. The driving unit drives the recording head and execute control so that the plurality of recording elements in each group is driven in order at a specific time interval. A number of the element columns is equal to or larger than a number of recoding elements in a group. The driving unit controls driving of the plurality of element columns so that recorded data of one column is recorded within a conveyance width of a recording medium to be conveyed within the specific time interval. | 05-30-2013 |
20140176630 | INK JET RECORDING APPARATUS - An ink jet recording apparatus including an ink tank for storing an ink, a flow path member communicating with the ink tank and a recording head for ejecting the ink supplied from the ink tank through the flow path member, wherein the apparatus further includes a light detection unit which applies light to at least one of the ink in the ink tank and the ink in the flow path member and detects the intensity of back-scattered light of the applied light, and an image density correction unit which corrects the density of an image to be recorded on the basis of the intensity of the back-scattered light which has been detected by the light detection unit. | 06-26-2014 |
Patent application number | Description | Published |
20110198235 | WATER ELECTROLYSIS SYSTEM AND METHOD FOR SHUTTING DOWN THE SAME - A water electrolysis system includes a water electrolysis apparatus including an electrolyte membrane. The electrolyte membrane is provided between an anode and a cathode. The water electrolysis apparatus is configured to generate oxygen on a side of the anode and hydrogen on a side of the cathode at a pressure higher than a pressure of the oxygen through electrolysis of water. A gas-liquid separation apparatus separates unreacted water and produced gas discharged from a water outlet of the water electrolysis apparatus. A water circulation apparatus circulates the water between the water electrolysis apparatus and the gas-liquid separation apparatus. The water circulation apparatus includes a return pipe having an on-off valve and connecting the water outlet and the gas-liquid separation apparatus. A hydrogen exhaust pipe is connected to the return pipe between the water outlet and the on-off value and extends upward from the water electrolysis apparatus. | 08-18-2011 |
20120018033 | HYDROGEN FILLING SYSTEM AND METHOD OF OPERATING THE SAME - A hydrogen filling system to fill a hydrogen fuel tank with hydrogen includes a high-pressure water electrolysis device capable of electrolyzing water to produce oxygen and the hydrogen. A hydrogen pipe connects the high-pressure water electrolysis device and a filling mechanism to fill the hydrogen fuel tank with the hydrogen. At least one hydrogen storage tank is provided to the hydrogen pipe to store the hydrogen produced by the high-pressure water electrolysis device at substantially a same pressure as a maximum filling pressure of the hydrogen fuel tank. A first valve mechanism is arranged downstream of the at least one hydrogen storage tank. A bypass pipe is provided to the hydrogen pipe and connects the high-pressure water electrolysis device and the filling mechanism to bypass the at least one hydrogen storage tank and the first valve mechanism. A second valve mechanism is arranged on the bypass pipe. | 01-26-2012 |
20120090989 | WATER ELECTROLYSIS SYSTEM - A water electrolysis system includes a water electrolysis apparatus, a low-pressure gas-liquid separator, a high-pressure gas-liquid separator, water pipe, and a decompression water supply device. The high-pressure gas-liquid separator separates the hydrogen received from a cathode of the water electrolysis apparatus and permeation water that has permeated from the anode. The water pipe connects the high-pressure gas-liquid separator and the low-pressure gas-liquid separator and is used for returning the water from the high-pressure gas-liquid separator to the low-pressure gas-liquid separator. The decompression water supply device is arranged at the water pipe and is to decompress the water discharged from the high-pressure gas-liquid separator. | 04-19-2012 |
20120103796 | WATER ELECTROLYSIS SYSTEM - A water electrolysis system includes a high-pressure water electrolysis apparatus and a gas-liquid separation device. The gas-liquid separation device includes a block member which includes a gas-liquid separation opening and a water-level detection opening. The gas-liquid separation opening and the water-level detection opening extend substantially vertically and includes respective bottom portions which integrally communicate with a discharge pipe. The discharge pipe is disposed at a lower side portion of the block member. The water-level detection opening includes a top portion and a top water-level detection section. The block member further includes an inlet hole in which the hydrogen is introduced from the high-pressure water electrolysis device. The inlet hole is disposed at an upper side portion of the block member. The inlet hole is positioned above the top water-level detection section of the water-level detection opening. | 05-03-2012 |
20120217156 | HIGH-PRESSURE HYDROGEN PRODUCING APPARATUS - A high-pressure hydrogen producing apparatus includes a cell device and a piston member. The piston member is to apply a pressing force to the cell device from an end of the piston member in a stacking direction in which unit cells are stacked. The piston member is provided with a first hydrogen passage, at least one second hydrogen passage, and a hydrogen lead-out passage. The first hydrogen passage and the second hydrogen passage are spaced at substantially equal angular intervals on a virtual circle centered on a center of an end face of the piston member. | 08-30-2012 |
20140151217 | HIGH-PRESSURE WATER ELECTOLYSIS APPARATUS - A high-pressure water electrolysis apparatus includes a solid polymer electrolyte membrane, an anode side separator, a cathode side separator, an anode side element member, a cathode side element member, a high-pressure hydrogen communication hole, a first seal member, and a second seal member. The first seal member is provided between the solid polymer electrolyte membrane and an outer circumference edge portion of the anode side separator. The second seal member has a thickness same as a thickness of the anode side element member at a time of operation of the high-pressure water electrolysis apparatus. The second seal member is disposed in an anode chamber to shield between the anode chamber and the high-pressure hydrogen communication hole. | 06-05-2014 |
Patent application number | Description | Published |
20100213051 | ELECTROCHEMICAL APPARATUS - A hydrogen electrolysis apparatus includes a stack of unit cells each having a membrane electrode assembly sandwiched between an anode separator and a cathode separator. The anode separator has a first flow field which is supplied with water, and the cathode separator has a second flow field which produces high-pressure hydrogen through an electrolysis of the water. The cathode separator also has a first seal groove defined therein which extends around the second flow field and a first seal member inserted in the first seal groove. The first seal groove and the second flow field are held in fluid communication with each other through passageways. The passageways keep the first seal groove and the second flow field in direct fluid communication with each other in bypassing relation to the boundary between the cathode separator and a solid polymer electrolyte membrane. | 08-26-2010 |
20100219066 | WATER ELECTROLYSIS SYSTEM - A water electrolysis system includes a water electrolysis apparatus for electrolyzing pure water supplied from a pure water supply apparatus for manufacturing high-pressure hydrogen. The water electrolysis apparatus has a pipe serving as a hydrogen outlet to which a gas-liquid separator, a cooler, and a water adsorption apparatus are successively connected in this order along the direction in which hydrogen is discharged from the water electrolysis apparatus. A first back-pressure valve is connected between the cooler and the water adsorption apparatus, and a second back-pressure valve is connected downstream of the water adsorption apparatus. | 09-02-2010 |
20100230278 | WATER ELECTROLYSIS SYSTEM - A water electrolysis system has a water electrolysis apparatus for electrolyzing pure water, thereby producing hydrogen, a water storage apparatus for separating between oxygen and residual water discharged from the water electrolysis apparatus, thereby storing the water, a water circulation apparatus for circulating the water stored in the water storage apparatus through the water electrolysis apparatus, and a water supply apparatus for supplying the pure water prepared from city water to the water storage apparatus. An inlet is formed at one end of a return pipe to introduce the oxygen and the residual water discharged from the water electrolysis apparatus into a tank, and the position of the inlet is determined such that the inlet is constantly opened in the water stored in the tank. | 09-16-2010 |
20110132748 | WATER ELECTROLYSIS APPARATUS - A water electrolysis apparatus includes an anode separator having a water flow field held in fluid communication with a water supply passage and a discharge passage. The water flow field includes a plurality of water channels, an arcuate inlet buffer, and an arcuate outlet buffer. The water channels have respective ends connected to the arcuate inlet buffer through respective inlet joint channels. The inlet joint channels are oriented at an angle of 90 degrees or greater with respect to respective tangential lines at the ends of the inlet joint channels which are connected to the arcuate inlet buffer. | 06-09-2011 |
20110147202 | WATER ELECTROLYSIS APPARATUS - A water electrolysis apparatus is formed by stacking a plurality of unit cells. Each unit cell includes a membrane electrode assembly, and an anode separator and a cathode separator which sandwich the membrane electrode assembly therebetween. The anode separator has a plurality of inlet joint channels in fluid communication with a water supply passage, and a plurality of outlet joint channels in fluid communication with a discharge passage. The water supply passage has an inner wall surface at which the inlet joint channels are open, and an outer wall surface which faces the inner wall surface, the inner wall surface and the outer wall surface jointly forming an opening of an oblong cross-sectional shape. | 06-23-2011 |
20110180398 | WATER ELECTROLYSIS APPARATUS - Each unit cell of a water electrolysis apparatus includes a pair of an anode separator and a cathode separator and a membrane electrode assembly interposed between the pair of separators. The anode separator has a first seal groove extending annularly around an anode current collector, a first seal member being disposed in the first seal groove. The cathode separator has a second seal groove extending annularly around a cathode current collector, a second seal member being disposed in the second seal groove. The first seal groove and the second seal groove are located across the solid polymer electrolyte membrane from each other respectively at different positions with respect to a stacking direction of the separators. | 07-28-2011 |
20110198217 | WATER ELECTROLYSIS APPARATUS - Each unit cell of a water electrolysis apparatus includes a pair of an anode separator and a cathode separator and a membrane electrode assembly interposed between the pair of separators. The anode separator has a first flow field to which water is supplied, and the cathode separator has a second flow field for producing high-pressure hydrogen through electrolysis of the water. A second seal groove for receiving a second seal member is disposed annularly around the second flow field. A pressure-releasing chamber is disposed outwardly of the second seal groove, is capable of communicating with the second seal groove and communicates with the outside through a depressurizing channel. | 08-18-2011 |
20110240486 | WATER ELECTROLYSIS SYSTEM AND METHOD OF OPERATING SAME - A water electrolysis system includes a water electrolysis apparatus for producing high-pressure hydrogen by electrolyzing pure water and a casing. The casing defines therein an accommodating chamber accommodating the water electrolysis apparatus etc. therein, first electric component compartments separate from the accommodating chamber and housing a controller and an electrolysis power supply therein, the first electric component compartments having first fans for introducing external air, and a second electric component compartment separate from the accommodating chamber and housing a relay, the second electric component compartment being connected to the first electric component compartments by a pipe. | 10-06-2011 |
20120073962 | HIGH-PRESSURE WATER ELECTROLYSIS APPARATUS - A high-pressure water electrolysis apparatus includes a plurality of unit cells each having an anode separator, a cathode separator, and a membrane electrode assembly which is sandwiched between the anode separator and the cathode separator. The membrane electrode assembly includes a solid polymer electrolyte membrane, and an anode current collector and a cathode current collector which are disposed respectively on opposite sides of the solid polymer electrolyte membrane. An electrically-conductive member is interposed between the cathode separator and disc springs and between a plate member and the cathode current collector so as to integrally extend from a region between the cathode separator and the disc springs to a region between the plate member and the cathode current collector. The electrically-conductive member includes an electrically-conductive path which electrically connects the cathode separator with the cathode current collector. | 03-29-2012 |
20120255868 | WATER ELECTROLYSIS SYSTEM AND METHOD OF OPERATING SAME - A water electrolysis system includes a water electrolysis apparatus for electrically decomposing water to generate oxygen and high-pressure hydrogen having a pressure higher than the oxygen, a gas-liquid separator connected to a hydrogen pipe which discharges the high-pressure hydrogen from the water electrolysis apparatus, for separating water contained in the high-pressure hydrogen, a high-pressure hydrogen outlet pipe for delivering the high-pressure hydrogen separated from water from the gas-liquid separator, a water drainage line for discharging the water from the gas-liquid separator, and a gas depressurizing line connected to the gas-liquid separator, for degassing the gas-liquid separator before the water is discharged from the water drainage line into the water drainage line. | 10-11-2012 |
20130015059 | ELECTROCHEMICAL DEVICEAANM Haryu; EijiAACI Utsunomiya-shiAACO JPAAGP Haryu; Eiji Utsunomiya-shi JPAANM Okabe; MasanoriAACI Nerima-kuAACO JPAAGP Okabe; Masanori Nerima-ku JPAANM Nakazawa; KojiAACI Utsunomiya-shiAACO JPAAGP Nakazawa; Koji Utsunomiya-shi JPAANM Taruya; KenjiAACI Utsunomiya-shiAACO JPAAGP Taruya; Kenji Utsunomiya-shi JP - In a unit cell that forms a water electrolysis device, which is an electrochemical device, an electrolyte membrane/electrode structure is sandwiched between an anode-side separator and a cathode-side separator. A load-applying mechanism is disposed between a cathode-side feeder and the cathode-side separator, while an anode-side feeder is set with a smaller contact area range than the aforementioned cathode-side feeder. The anode-side feeder and the cathode-side feeder are set with a larger contact area range than an anode electrode catalyst layer and a cathode electrode catalyst layer, and a contact surface that touches a solid polymer electrolyte membrane on the aforementioned anode-side feeder is disposed projecting farther to the side of the aforementioned solid polymer electrolyte membrane than a contact surface on the anode-side separator and a contact surface on a frame member. | 01-17-2013 |
Patent application number | Description | Published |
20090053555 | High Corrosion Resistance Hot dip Galvanized Steel Material - The present invention provides a high corrosion resistance hot dip galvannealed steel material comprised of a Zn-based hot dip plated steel material achieving both a higher corrosion resistance of the plated layer itself by the added elements and sacrificial protection of iron metal by the plated layer or workability free of degradation caused of formation of intermetallic compounds by added elements, that is, a high corrosion resistance hot dip Zn plated steel material characterized in that an alloy plated layer containing Zn: 35 mass % or more, preferably 40 mass % or more, contains a non-equilibrium phase having a heat capacity by differential scanning calorimetry of 1 J/g or more. Furthermore, 5% or more, preferably 50% or more in terms of vol % is an amorphous phase. The alloy layer may contain, by mass %, Mg: 1 to 60% and Al: 0.07 to 59%, may further contain one or more elements selected from Cr, Mn, Fe, Co, Ni, and Cu in a total of 0.1 to 10%, and may in addition contain one or more elements of 0.1 to 10% of La, 0.1 to 10% of Ce, 0.1 to 10% of Ca, 0.1 to 10% of Sn, 0.005 to 2% of P, and 0.02 to 7% of Si. | 02-26-2009 |
Patent application number | Description | Published |
20100307808 | WIRING BOARD - A wiring board includes a core substrate having a structure including an insulating base material and a large number of filamentous conductors densely provided in the insulating base material and piercing the insulating base material in a thickness direction thereof. Pads made of portions of wiring layers are oppositely disposed on both surfaces of the core substrate and electrically connected to opposite ends of a plurality of filamentous conductors in such a manner that the pads share the filamentous conductors. A wiring connection between one surface side and the other surface side of the core substrate is made through the pads. The insulating base material is made of an inorganic dielectric. Pads made of portions of the wiring layers are disposed on both surfaces of the core substrate and electrically connected only to corresponding one end sides of different groups each formed of a plurality of filamentous conductors. | 12-09-2010 |
20120064361 | HEAT RADIATING COMPONENT AND METHOD OF PRODUCING SAME - A heat radiating component includes a base including a first metal, a first plating layer formed on the base and including a second metal and carbon material structures dispersed in the second metal, and a second plating layer formed on the first plating layer. The first plating layer includes protruding parts that are parts of the carbon material structures protruding from a surface of the second metal. The second plating layer is formed on the first plating layer to cover surfaces of the protruding parts and the surface of the second metal without filling spaces between the protruding parts. | 03-15-2012 |
20140030504 | ELECTROLESS PLATED FILM INCLUDING PHOSPHORUS, BORON AND CARBON NANOTUBE - A nickel electroless plated film includes phosphorus, boron and carbon nanotube. | 01-30-2014 |
20140034282 | HEAT RADIATION COMPONENT AND METHOD FOR MANUFACTURING HEAT RADIATION COMPONENT - A heat radiation component includes a substrate including a predetermined surface, a plurality of carbon materials arranged with spaces in between, and a plating layer having a surface and including a plating material that fills the spaces between the plurality of carbon materials. At least one of the plurality of carbon materials is oriented orthogonal to the predetermined surface of the substrate. A part of each of the plurality of carbon materials protrudes from the surface of the plating layer in a direction opposite to the substrate. | 02-06-2014 |
Patent application number | Description | Published |
20090125683 | PORTABLE AUXILIARY STORAGE DEVICE - Versatility of a memory card is improved by providing a memory card wherein data protection mode and normal mode can be selected at discretion. | 05-14-2009 |
20120147900 | RECORDING AND REPRODUCING APPARATUS - The present invention includes: a packet selection unit that selects predetermined packets from input transport packets; a packet deletion determination unit that determines whether or not to delete packets not selected by the packet selection unit; and a count unit that counts the predetermined number of the packets selected by the packet selection unit. It is therefore possible to record Null packets, which are not necessary in recording, at a requisite minimum every corresponding mode without deleting the Null packets. As a result, it is possible to maintain the same interval of the TS packets as that applied in receiving them. | 06-14-2012 |
20140118478 | TRANSMISSION DEVICE AND TRANSMISSION METHOD - A transmission device includes an image capturing part that captures a subject and generates a plurality of temporally successive frame images, an analyzer that analyzes a size of a motion of the subject by use of at least two or more of the frame images, a viewing condition receiver that receives viewing conditions from a reception device, and a network bandwidth measurement part that measures a congestion degree of a network. The transmission device further includes a controller that controls a data volume of the plurality of frame images based on the size of the motion of the subject, the viewing conditions, and the congestion degree of the network, to determine a predetermined parameter for encoding, an encoder that encodes the plurality of frame images based on the predetermined parameter, and a transmitter that transmits the plurality of encoded frame images. | 05-01-2014 |
Patent application number | Description | Published |
20080250187 | Data processing system and data processor - One data processor is provided with an interface for realizing connection with the other data processor. This interface is provided with a function for connecting the other data processor as a bus master to an internal bus of the one data processor, and the relevant other data processor is capable of directly operating peripheral functions that are memory mapped to the internal bus from an external side via the interface. Accordingly, the data processor can utilize the peripheral functions of the other data processor without interruption of the program being executed. In short, one data processor can use in common the peripheral resources of the other data processor. | 10-09-2008 |
20110131349 | DATA PROCESSING SYSTEM AND DATA PROCESSOR - One data processor is provided with an interface for realizing connection with the other data processor. This interface is provided with a function for connecting the other data processor as a bus master to an internal bus of the one data processor, and the relevant other data processor is capable of directly operating peripheral functions that are memory mapped to the internal bus from an external side via the interface. Accordingly, the data processor can utilize the peripheral functions of the other data processor without interruption of the program being executed. In short, one data processor can use in common the peripheral resources of the other data processor. | 06-02-2011 |
20120290743 | DATA PROCESSING SYSTEM AND DATA PROCESSOR - One data processor is provided with an interface for realizing connection with the other data processor. This interface is provided with a function for connecting the other data processor as a bus master to an internal bus of the one data processor, and the relevant other data processor is capable of directly operating peripheral functions that are memory mapped to the internal bus from an external side via the interface. Accordingly, the data processor can utilize the peripheral functions of the other data processor without interruption of the program being executed. In short, one data processor can use in common the peripheral resources of the other data processor. | 11-15-2012 |
20140053010 | DATA PROCESSING SYSTEM AND DATA PROCESSOR - One data processor is provided with an interface for realizing connection with the other data processor. This interface is provided with a function for connecting the other data processor as a bus master to an internal bus of the one data processor, and the relevant other data processor is capable of directly operating peripheral functions that are memory mapped to the internal bus from an external side via the interface. Accordingly, the data processor can utilize the peripheral functions of the other data processor without interruption of the program being executed. In short, one data processor can use in common the peripheral resources of the other data processor. | 02-20-2014 |
20140325093 | DATA PROCESSING SYSTEM AND DATA PROCESSOR - One data processor is provided with an interface for realizing connection with the other data processor. This interface is provided with a function for connecting the other data processor as a bus master to an internal bus of the one data processor, and the relevant other data processor is capable of directly operating peripheral functions that are memory mapped to the internal bus from an external side via the interface. Accordingly, the data processor can utilize the peripheral functions of the other data processor without interruption of the program being executed. In short, one data processor can use in common the peripheral resources of the other data processor. | 10-30-2014 |
Patent application number | Description | Published |
20090071588 | METHOD OF MANUFACTURING HERMETICALLY SEALED CONTAINER - The method of manufacturing a hermetically sealed container improved is provided. The height of each location of a bonding member is measured across all the extending directions of the bonding member. The control computer decides a pressing force of a pressing cylinder for pressing and deforming the substrate so that a constant pressure is applied between a substrate and the bonding member based on the height of the bonding member of the position heated by a heater. Next, a rotating body, the heater, and the pressing cylinder, which are integrally fixed, are scanned along the bonding member. By the pressing force calculated by the control computer, the pressing cylinder is driven and the rotating body is pressed to the substrate side, while being rotationally driven, so that the light beam by the heater such as a laser device is irradiated. | 03-19-2009 |
20090199963 | AIRTIGHT CONTAINER MANUFACTURING METHOD, AND IMAGE DISPLAYING APPARATUS MANUFACTURING METHOD USING AIRTIGHT CONTAINER MANUFACTURING METHOD - An airtight container manufacturing method capable of effectively utilizing an energy beam and improving a “takt time” as acquiring desired bonding intensity is provided. That is, a first bonding material is arranged between a first plate structure and a frame, a second bonding material is arranged between a second plate structure and the frame. The energy beam is irradiated to the first bonding material through the first plate structure to bond the first plate structure and the frame. The energy beam is irradiated to the second bonding material through the frame so that the beam transmits through the first plate structure and the surface of the frame on the side of the first plate structure, to bond the second plate structure and the frame. Such bonding processes are performed after an arrangement step. | 08-13-2009 |
20100186350 | MANUFACTURING METHOD OF AIRTIGHT CONTAINER AND IMAGE DISPLAYING APPARATUS - In airtight container manufacturing method including sealing a through-hole by a cover, it secures sealing performance and restrains sealant from flowing into the through-hole. The method comprises: (a) exhausting inside of a container through the through-hole; (b) arranging a spacer along periphery of the through-hole on an outer surface of the container the inside of which has been exhausted; (c) arranging a plate so that the spacer and the through-hole are covered by the plate and gap is formed along a side surface of the spacer between the plate and the container outer surface; and (d) arranging the cover to cover the plate and bonding the cover and the container outer surface via sealant positioned between the cover and the container outer surface, wherein the sealing includes hardening the sealant after deforming the sealant as pressing the plate by the cover so that the gap is infilled with the sealant. | 07-29-2010 |
20100190408 | MANUFACTURING METHOD OF AIRTIGHT CONTAINER AND IMAGE DISPLAYING APPARATUS - In an airtight container manufacturing method including sealing a through-hole by a cover, it secures sealing performance and restrains a sealant from flowing into the through-hole. The method comprises: (a) exhausting the inside of a container through the through-hole provided on the container; (b) arranging a plate member having, at its periphery, grooves penetrating the plate member in its plate thickness direction on the outer surface of the container the inside of which has been exhausted, so as to close up the through-hole; and (c) arranging the cover so as to cover the plate member via the sealant and bonding the cover and the outer surface of the container via the sealant, wherein the sealing includes hardening the sealant after deforming the sealant as pressing the plate member by the cover so that the sealant is positioned between the cover and the outer surface of the container via the grooves. | 07-29-2010 |
20100190409 | MANUFACTURING METHOD OF AIRTIGHT CONTAINER AND IMAGE DISPLAYING APPARATUS - In an airtight container manufacturing method including sealing a through-hole by a cover, it secures sealing performance and restrains a sealant from flowing into the through-hole. The method comprises: (a) exhausting the inside of a container through the through-hole provided on the container; (b) arranging a plate member having, at its periphery, grooves penetrating the plate member in its plate thickness direction on the outer surface of the container the inside of which has been exhausted, so as to close up the through-hole; and (c) arranging the cover so as to cover the plate member via the sealant and bonding the cover and the outer surface of the container via the sealant, wherein the sealing includes hardening the sealant after deforming the sealant as pressing the plate member by the cover so that the sealant is positioned between the cover and the outer surface of the container via the grooves. | 07-29-2010 |
20110285686 | IMAGE DISPLAY APPARATUS - A display apparatus includes: a first insulating substrate provided with a cathode and a through hole; a second insulating substrate provided with an anode to which a voltage for accelerating the electron emitted from the cathode is applied; a voltage application structure connected to the anode through the through hole, configured to apply the voltage to the anode; and a first potential regulation structure that is provided in such a manner to enclose the through hole on a first face of the first insulating substrate and regulated at a lower potential than that of the anode. A second potential regulation structure that is in contact with a wall surface constituting the through hole therein and regulates a potential of a contact portion with the wall surface at a voltage same as that of the voltage application structure. | 11-24-2011 |
20130174961 | MANUFACTURING METHOD OF HERMETICALLY SEALED CONTAINER - A manufacturing method of a hermetic container includes steps of bonding a frame member to a first substrate, by pressing the first substrate and the second substrate to each other by an electrostatic force generated between a first electrode and a second electrode by applying a potential difference between the first electrode and the second electrode, and softening and melting the bonding material. Additional steps include cooling and solidifying the bonding material by simultaneously heating the bonding material with a local heating unit and moving the local heating unit, and increasing the potential difference between the first electrode and a segment of the second electrode, which is in a position at which the segment is heated by the local heating unit. | 07-11-2013 |
Patent application number | Description | Published |
20090320948 | STACKED LOAD LOCK CHAMBER AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - A stacked load lock chamber comprises a first load lock chamber, a second load lock chamber stacked on the first load lock chamber, a first slit-valve mover configured to open and close a first opening provided to an atmosphere side of the first load lock chamber, a second slit-valve mover configured to open and close a second opening provided to an atmosphere side of the second load lock chamber, a first arm connected to the first slit-valve mover, a second arm connected to the second slit-valve mover, and a driver located below the first and second load lock chambers and configured to drive the first and second arms to move the first and second slit-valve movers through the first and second arms. | 12-31-2009 |
20110155059 | THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, AND SHIELD COMPONENT - The inventors of this invention conducted a test and found out that to prevent peel-off of an adherent film, it is not of essential importance to set the radius of curvature equal to or larger than a predetermined threshold. The inventors of the present invention also found out that peel-off of an adherent film occurs in the region in which the curvature of a shield changes and is less likely to occur when the change in curvature of the shield is small. Accordingly, the key to the problem is the magnitude of a change in curvature of the shield, so changing the curvature stepwise makes it possible to suppress a large change in curvature, and thus to prevent peel-off of an adherent film free from any disadvantages such as deterioration in film thickness distribution, which may occur due to an increase in size of the shield. | 06-30-2011 |
20120148375 | SUBSTRATE PROCESSING APPARATUS - The present invention provides an in-line type multi-chamber substrate processing apparatus which, with a simple configuration, can decrease influence of particles due to film peeling and enables installation of a number of processing chambers. In one embodiment of the present invention, a jointless arm of a transfer robot that has a substrate holding part | 06-14-2012 |
Patent application number | Description | Published |
20100073737 | IMAGE READING APPARATUS, IMAGE FORMING APPARATUS, AND CARRIAGE POSITIONING METHOD - An image reading apparatus includes a carriage having mounted thereon a linear light source and an image sensor and a reference pattern member disposed at a reference position located toward the first direction from a home position. The current location of the carriage is judged relatively to first and second areas that are divided by a boundary defined in advance at a location toward the first direction from the reference position. The first area is located toward the first direction and the second area is located toward the second direction. Immediately after the power is turned ON, current location information indicating whether the carriage is currently located in the first area or the second area is read from the nonvolatile memory. The carriage is first moved to the reference position and then moved a predetermined distance in the second direction, so that the carriage is duly positioned at the home position. | 03-25-2010 |
20110091256 | IMAGE FORMING APPARATUS AND METHOD OF CONTROLLING THE SAME - An image forming apparatus includes a first rotator by which one surface of a paper is subjected to image transferring, image fixing, or other processings, a second rotator which presses the paper against the first rotator from the other surface of the paper, a space changing unit which changes a space between axial cores of the first rotator and the second rotator, a feeding unit which feeds the paper between the first rotator and the second rotator, and a control unit which adjusts a driving timing of the space changing unit in accordance with the driving of the feeding unit, wherein when the paper is thinner than a set value, the control unit makes the paper enter between both the rotators in a state where the second rotator is pressed against the first rotator, and when the paper is equal to or thicker than the set value, the control unit controls to press the second rotator against the first rotator at a timing where a distal end of the paper passes through between both the rotators. | 04-21-2011 |
Patent application number | Description | Published |
20080226317 | Image Forming Apparatus and Method - An image forming apparatus, includes: a plurality of image forming stations each of which includes a photosensitive member and a charger that charges a surface of the photosensitive member to a specified surface potential, and is adapted to execute an image forming operation of forming an electrostatic latent image on the photosensitive member charged by the charger and developing the electrostatic latent image with toner to form an image; a plurality of direct-current bias generators that are provided corresponding to the respective plurality of chargers and generate direct-current voltages as direct-current components of charging biases to be given to the chargers; a plurality of series resistors that are provided corresponding to the respective plurality of chargers and electrically connect the plurality of chargers and the direct-current bias generators corresponding to the chargers in a one-to-one relationship; an alternating-current bias generator that generates alternating-current voltages as alternating-current components of the charging biases to be given to the chargers; and a controller that controls the voltage values of the direct-current voltages to be outputted from the respective direct-current bias generators, wherein the direct-current voltage outputted from the direct-current bias generator corresponding to the charger via the series resistor corresponding to the charger and the alternating-current voltage outputted from the alternating-current bias generator are superimposed and applied as the charging bias to each of the plurality of chargers, and the controller sets the voltage value of the direct-current voltage outputted from the direct-current bias generator to the sum of a target voltage preset as a voltage to be applied to the charger corresponding to the direct-current bias generator and a voltage drop caused by the series resistor corresponding to the charger and calculated based on a detection result on a direct current flowing into the charger for each of the direct-current bias generators. | 09-18-2008 |
20100239328 | DEVELOPING APPARATUS, IMAGE FORMING APPARATUS, IMAGE FORMING METHOD, AND TONER - A developing apparatus includes: a housing which contains toner; a toner supporting roller; and a regulating blade, wherein bias voltage is applied to the regulating blade, the toner includes, an insulating external additive and an electrically-conductive external additive, satisfies any of the following first to third conditions, the first condition: a volume average grain diameter of the electrically-conductive external additive is larger than a volume average grain diameter of the insulating external additive, the second condition: a volume average grain diameter of the electrically-conductive external additive is larger than a volume average grain diameter of the insulating external additive in which coverage in the toner is higher than that of the electrically-conductive external additive, and the third condition: coverage of the electrically-conductive external additive in the toner is higher than coverage of the insulating external additive that is larger in volume average grain diameter than the electrically-conductive external additive. | 09-23-2010 |
20120236063 | DISCHARGE TESTING DEVICE - A discharge testing device comprising:
| 09-20-2012 |
Patent application number | Description | Published |
20090149658 | Novel Histidine Derivatives - The present invention is to provide a novel compound which is useful as an excellent analgesic agent. The present invention is to provide the novel histidine derivative having an excellent analgesic action and the like. The compound of the present invention is very useful as a pharmaceutical agent such as analgesics for the treatment of various kinds of acute or chronic pain diseases and of neuropathic pain diseases. | 06-11-2009 |
20100121040 | THERAPEUTIC AGENT FOR PAIN DISEASE - Disclosed is an analgesic agent for a non-inflammatory pain disease, which comprises a sialic acid or a pharmaceutically acceptable salt thereof as an active ingredient. The sialic acid which is an active ingredient for the agent has an analgesic effect on a disease model animal of neurogenic pain which is a non-inflammatory pain. Therefore, the analgesic agent is useful as a pharmaceutical agent for the treatment of a non-inflammatory pain disease such as a neurogenic pain disease, e.g. trigeminal neuralgia, postherpetic neuralgia, entrapment neuropathy, complex regional pain syndrome, diabetic neuropathy, traumatic neuropathy, phantom limb pain, central pain after spinal cord injury or stroke, and neuropathy caused by pharmacotherapy or radiation therapy, or the like. | 05-13-2010 |
Patent application number | Description | Published |
20100324761 | ELECTRIC TRAIN CONTROL APPARATUS - According to one embodiment, an electric train control apparatus having a plurality of electric motors and a plurality of inverters configured to control electric motors, independently of one another, including shaft speed calculating units respectively, and configured to calculate shaft speeds of electric motors, reference speed calculating unit configured to calculate a reference speed from shaft speeds of electric motors, acceleration detection control units configured to calculate torque reduction values from rates at which shaft speeds calculated, slip speed control units configured to reduce torques in accordance with a difference between shaft speeds of electric motors, state monitoring units configured to monitor states of detecting shaft speeds and output state signals, and changeover unit configured to switch control of inverters, between control performed by acceleration detection control units and control performed by slip speed control units, in accordance with state signals received from state monitoring units. | 12-23-2010 |
20120206190 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a semiconductor circuit and an electric-power supply. The semiconductor circuit includes a main element including a switching element and an antiparallel diode, a reverse voltage application circuit including a high-speed free wheeling diode, a capacitor and an auxiliary element, a main element drive circuit, and an auxiliary element drive circuit. The electric-power supply is configured to supply electric-power to the capacitor, the main element drive circuit and the auxiliary element drive circuit, and has a voltage lower than the withstand voltage of the main element. | 08-16-2012 |
20120206899 | SEMICONDUCTOR SWITCH - According to one embodiment, a semiconductor switch includes a main element including a switching element and an antiparallel diode, and a reverse voltage application circuit. The reverse voltage application circuit includes an auxiliary electric-power supply, a high-speed free wheeling diode, an auxiliary element, and a capacitor. The high-speed free wheeling diode comprises a plurality of diodes connected in series. | 08-16-2012 |
20120212985 | POWER CONVERSION APPARATUS - According to one embodiment, an apparatus includes a controller which outputs a signal for controlling ON and OFF of a switch which changes over connection between a second input terminal and the output end of a coil. The controller includes an MPPT control unit which follows a maximum power point with a period based on a zero-cross detection signal of a system voltage based on an input signal acquired by subtracting a value obtained by multiplying a droop gain simulating drooping characteristics, a control unit which outputs a direction value in such a manner that a difference between a reference output from the MPPT control unit and the input signal becomes zero, and a PWM comparator which outputs a PWM signal based on the direction value and a triangular wave voltage. | 08-23-2012 |
20130002172 | ELECTRIC-VEHICLE CONTROL APPARATUS - According to one embodiment, four VVVF main circuit inverters for supplying electric power to drive a permanent-magnet synchronous motor are packaged into one unit. The four VVVF main circuit inverters are configured as a 4-in-1 inverter unit which shares a cooling mechanism for radiating heat generated due to power supply operation for the permanent-magnet synchronous motors to outside. A 2-in-1 semiconductor device package in which two semiconductor elements to convert electric power are packaged into one unit to be able to drive a permanent-magnet synchronous motor is contained in the 4-in-1 inverter unit. Thereby, individual control of inverters and reducing the size of the entire apparatus can be achieved for the electric-vehicle control apparatus. | 01-03-2013 |
20140254226 | POWER CONVERSION DEVICE - An inexpensive and space-saving power conversion device is provided which can eliminate a high-cost and large reactor like a buffer reactor. A device includes multiple switching elements | 09-11-2014 |