Patent application number | Description | Published |
20080304298 | System Interconnection Inverter - A system interconnection inverter includes a step-up converter and an inverter. Moreover, the system interconnection inverter includes a short-circuit current-interrupting diode with a cathode connected to an input terminal of a negative bus, a semiconductor switch connected to an anode of the short-circuit current-interrupting diode, a semiconductor switch drive circuit that drives the semiconductor switch, a semiconductor switch-off circuit that turns off the semiconductor switch drive circuit when negative power is applied such that electric current flows from a cathode toward an anode of the input terminal, and a control circuit that controls the semiconductor switch drive circuit. | 12-11-2008 |
20080304301 | Power Converting Apparatus For System Connection - A grounding wire from a commercial power system is connected to a series-connection end of a series connection between two capacitors connected in series between a positive electrode and a negative electrode. A current detector monitors an output current of an inverter unit in which four switching elements and two diodes convert voltages at both ends of the series circuit of the capacitors at three levels. An operation control circuit controls a generation of a PWM signal to be applied to the four switching elements, to minimize a difference between a current value detected by the current detector and a target current value. | 12-11-2008 |
20090085537 | Power supply apparatus - A first booster circuit and a second booster circuit include input capacitors, reactors, diodes, switch elements, and output capacitors, and are arranged to be symmetric to each other on a positive side and a negative side. The reactors are magnetically coupled to each other. With such configuration, the switch elements are on/off controlled simultaneously based on terminal voltages of the input capacitors and the output capacitors. | 04-02-2009 |
20090289618 | ZERO-PHASE CURRENT DETECTING APPARATUS - In a zero-phase current detecting apparatus, a feedback loop is made up of a pulse generating unit, a current detecting unit, a peak detecting unit, an adding unit, and a current regulating unit. The adding unit outputs a difference between a target value and a peak value detected by the peak detecting unit. A zero-phase current is detected based on the difference output from the adding unit as a result of regulation of the peak value so as to be the target value in the adding unit. | 11-26-2009 |
20120086374 | INVERTER DEVICE, MOTOR DRIVING DEVICE, REFRIGERATING AIR CONDITIONER, AND POWER GENERATION SYSTEM - An inverter device, a motor driving device, a refrigerating air conditioner, and a power generation system, which can reduce the recovery loss thereof, are obtained. A plurality of arms that can conduct and block current are provided. At least one of the plurality of arms includes: a plurality of switching elements each having a parasitic diode and being connected in series with each other; and a reverse current diode connected in parallel with the plurality of switching elements. | 04-12-2012 |
Patent application number | Description | Published |
20080216155 | Image forming apparatus - An image forming apparatus is provided that is capable of preventing a print data from being leaked even where a user forgets to print out the print data with which an authentication data is attached. The image forming apparatus of the present invention has: a network interface receiving the print data, the authentication data, and an importance degree data; a hard disk drive storing the print data, the authentication data, and the importance degree data received by the network interface; an operation panel with which the user inputs the authentication data that is used to authenticate the print data; an authentication control unit comparing the authentication data stored in the hard disk drive with the authentication data input by the user; a control comprising a print processing unit controlling print processing of the print data stored in the hard disk drive based on the comparison result; and a time management unit measuring a time for which the print data is stored in the hard disk drive, wherein the control unit deletes the print data based on the importance degree data and the time for which the print data is stored in the hard disk drive. | 09-04-2008 |
20090060537 | Image forming apparatus - An image forming apparatus includes an image forming unit for forming an image using a consumable supply; a cover attached to the image forming unit; an energy accumulation unit for accumulating energy when the cover is closed; an energy initializing unit for initializing a level of the energy accumulated in the energy accumulation unit when the cover is opened; an energy detection unit for detecting whether the level of the energy accumulated in the energy accumulation unit is initialized; and a state correction unit for correcting a state of the image forming unit according to a detection result of the energy detection unit. | 03-05-2009 |
20100271645 | IMAGE READING APPARATUS AND IMAGE FORMING APPARATUS - An image reading apparatus includes: an image reader configured to read both sides of sheets of an original document to generate page images thereof; an attribute information supplier configured to attach, to the page image of each page, attribute information including a page number of the corresponding page in the original document and a distinction whether the corresponding page is a front side or a back side of the sheet of the original document, when the page image is not a blank page; and an electronic file generator configured to generate an electronic file by integrating non-blank page images, which are the page images with no blank pages. | 10-28-2010 |
Patent application number | Description | Published |
20090205565 | APPARATUS FOR MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE - The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide. | 08-20-2009 |
20100080956 | Low resistivity single crystal silicon carbide wafer - The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less. | 04-01-2010 |
20100289033 | SINGLE-CRYSTAL SILICON CARBIDE INGOT, AND SUBSTRATE AND EPITAXIAL WAFER OBTAINED THEREFROM - The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom. | 11-18-2010 |
20100295059 | SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRYSTAL SUBSTRATE - The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm | 11-25-2010 |
20110206929 | SINGLE-CRYSTAL SILICON CARBIDE AND SINGLE-CRYSTAL SILICON CARBIDE WAFER - The present invention provides single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2×10 | 08-25-2011 |
20110278596 | Epitaxial silicon carbide monocrystalline substrate and method of production of same - The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same. | 11-17-2011 |
20110308449 | CRUCIBLE FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE, AND PRODUCTION APPARATUS AND PRODUCTION METHOD FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE - The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are capable of stably growing a single-crystal silicon carbide ingot good in crystallinity at high yield, is a crucible for producing single-crystal silicon carbide having a crucible vessel for holding silicon carbide raw material and a crucible cover for attaching a seed crystal and is adapted to sublimate a silicon carbide raw material in the crucible vessel to supply silicon carbide sublimation gas onto a seed crystal attached to the crucible cover and grow single-crystal silicon carbide on the seed crystal, which crucible for producing single-crystal silicon carbide is provided in the crucible vessel and the crucible cover with threaded portions to be screwed together and is provided with a sublimation gas discharge groove or grooves capable of regulating flow rate by relative rotation of the threaded portions; and is a production apparatus for single-crystal silicon carbide equipped with such a crucible and a production method for single-crystal silicon carbide utilizing this apparatus. | 12-22-2011 |
20130029158 | PROCESS FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE OBTAINED BY THE SAME - Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T | 01-31-2013 |
20150075422 | EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF PRODUCTION OF SAME - The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same. | 03-19-2015 |