Nai-Chung
Nai-Chung Chang, Taipei TW
Patent application number | Description | Published |
---|---|---|
20110077562 | Gait training device - The invention discloses a gait training device for people with walking disability. Using motors and six-bar linkage mechanism, the invention can guide users' ankles to follow preferred gait trajectories, and thus help people with walking disability practice correct gaits. | 03-31-2011 |
Nai-Chung Fu, Zhongli City TW
Patent application number | Description | Published |
---|---|---|
20130082699 | Magnatoresistive Sensing Component and Agnatoresistive Sensing Device - A magnetoresistive sensing component includes a strip of horizontal magnetoresistive layer, a conductive part and a first magnetic-field-sensing layer. The strip of horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side along its extending direction. The conductive part is disposed above or below the horizontal magnetoresistive layer and electrically coupled to the horizontal magnetoresistive layer. The conductive part and the horizontal magnetoresistive layer together form at least an electrical current path. The first magnetic-field-sensing layer is not parallel to the surface of the substrate and magnetically coupled to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer. | 04-04-2013 |
20140111194 | Magnatoresistive Sensing Device and Method for Fabricating the Same - A magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element, a circuitry element and a shielding unit. The magnetoresistive sensing element, the circuitry element and the shielding unit are disposed at the same side of the substrate. The shielding unit is between the magnetoresistive sensing element and the circuitry element. The shielding unit comprises at least one magnetic material. | 04-24-2014 |
20140232390 | Magnatoresistive Component and Magnatoresistive Device - A magnetoresistive component comprises a horizontal magnetoresistive layer and a nonparallel magnetoresistive layer. The horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side, along its extending direction. The nonparallel magnetoresistive layer is not parallel to the surface of the substrate and is physically connected to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer. | 08-21-2014 |
20140322828 | Method for Manufacturing Magnetoresistance Component - A method for manufacturing a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including an interconnect structure is formed on the substrate, wherein the interconnect structure comprises a metal pad. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. A patterned magnetoresistance component is formed above the metal damascene structure to electrically connect to the metal damascene structure. | 10-30-2014 |
Nai-Chung Fu, Zhubei City TW
Patent application number | Description | Published |
---|---|---|
20140132250 | Integrated Magnatoresistive Sensing device - An integrated magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element and a built-in self test (BIST) unit. The substrate comprises a first surface and a second surface opposite to the first surface. The magnetoresistive sensing element is disposed above the first surface and comprises at least a magnetoresistive layer not parallel to the first surface. The BIST unit is disposed above the first surface and comprises at least a conductive part corresponding to the magnetoresistive layer. The conductive part is configured to generate a magnetic field along a direction perpendicular to the first surface. A projection of the conductive part on the first surface does not overlap with a projection of the magnetoresistive layer on the first surface. | 05-15-2014 |
20140332914 | Magnatoresistive Structure and Method for Forming the Same - A magnetoresistive structure includes a substrate and a patterned stack structure. The substrate has a back surface and a front surface having a step portion. The patterned stack structure is on the step portion of the front surface and comprises a magnetoresistive layer, a conductive cap layer and a dielectric hard mask layer. The step portion has a top surface parallel to the back surface, a bottom surface parallel to the back surface and a step height joining the top surface and bottom surface and being not parallel to the back surface. | 11-13-2014 |
Nai-Chung Fu, Jhubei City TW
Patent application number | Description | Published |
---|---|---|
20160109532 | SET/RESET CIRCUIT AND MAGNETIC SENSING DEVICE USING THE SAME - A set/reset circuit used with a magnetoresistive sensor includes a coil, four switch units, a capacitor and a control unit. The four switch units are electrically coupled between a power supply voltage (or a reference voltage) and the coil and have variable resistances. The first end of the capacitor is electrically coupled to the power supply voltage and some of the switch units, and the second end of the capacitor is electrically coupled to the reference voltage. The control unit is electrically coupled to the four switch units and configured to receive a first pulse width modulation signal and a second pulse width modulation signal. A magnetic sensing device utilizing the abovementioned set/reset circuit is also provided. | 04-21-2016 |