Patent application number | Description | Published |
20110139552 | BICYCLE RIM BRAKE ASSEMBLY - A bicycle rim brake assembly includes a support bracket, first and second brake arms, a fixing member and a biasing member. The first brake arm is pivotally supported to the support bracket. The second brake arm is pivotally supported to the support bracket. The fixing member has a support bracket section and a bicycle frame attachment section. The biasing member is disposed on the fixing member. | 06-16-2011 |
20110290595 | REVERSIBLE HYDRAULIC CALIPER BRAKE FOR A BICYCLE - A bicycle hydraulic caliper brake apparatus includes a first brake arm with a first bearing surface, a second brake arm with a second bearing surface, and a hydraulic control device that includes a housing and a piston unit. The first bearing surface non-lockingly engages the piston unit, and the second bearing surface non-lockingly engages the housing. At least one of the piston unit or the housing engages a corresponding first or second bearing surface so that the piston unit or the housing rotates at least in part around an axis that is substantially parallel to at least one of the rotational axes of the brake arms. The housing is carried by the first brake arm and the second brake arm so that the housing moves together with the first brake arm and the second brake arm relative to a bicycle frame member. | 12-01-2011 |
20120222919 | CENTER-PULL BICYCLE BRAKE WITH SYNCHRONIZED BRAKE ARMS - A bicycle brake device includes first and second brake arms. The first brake arm includes a first brake arm mounting portion for mounting the first brake arm to a bicycle frame member, a first brake pad mounting portion, and a first control interface portion. Similarly, the second brake arm includes a second brake arm mounting portion for mounting the second brake arm to the bicycle frame member, a second brake pad mounting portion, and a second control interface portion. A biasing member is operatively coupled to the first brake arm so that the first brake pad mounting portion is biased in a selected direction. A bias communicating member is operatively coupled between the first brake arm and the second brake arm to communicate biasing force from the biasing member to the second brake arm. | 09-06-2012 |
20120222920 | CENTER-PULL BICYCLE BRAKE WITHOUT CABLE STRAIN DURING OPERATION - A first brake arm includes a first brake arm mounting portion for pivoting around a first pivot axis, a first brake pad mounting portion, and a first control interface portion with a first control element attachment location. A second brake arm includes a second brake arm mounting portion for pivoting around a second pivot axis, a second brake pad mounting portion, and a second control interface portion with a second control element attachment location. A passage is dimensioned to receive the first brake arm through the second brake arm when the first brake arm and the second brake arm are mounted to a bicycle frame member. The first brake arm intersects the second brake arm so that the first control element attachment location and the second control element attachment location are located on opposite sides of the intersection. | 09-06-2012 |
20120222921 | BICYCLE BRAKE WITH SYNCHRONIZED BRAKE ARMS - A bicycle brake apparatus includes first and second brake arms. The first brake arm includes a first brake arm mounting portion for mounting the first brake arm to a bicycle frame member, a first brake pad mounting portion, and a first control interface portion. The second brake arm includes a second brake arm mounting portion for mounting the second brake arm to the bicycle frame member and a second brake pad mounting portion. A synchronizing link communicates a synchronizing force that arises from one of the first brake arm or the second brake arm to the other one of the first brake arm or the second brake arm so that the first brake arm and the second brake arm move in synchronization. | 09-06-2012 |
20120222922 | HYDRAULIC RIM BRAKE FOR A BICYCLE - A bicycle brake apparatus comprises a first brake arm, a second brake arm and a piston assembly. A first control interface portion of the first brake arm is coupled to an output shaft of a piston, and a second control interface portion of the second brake arm is coupled to a housing of the piston assembly between first and second axial ends of the housing. An adjusting member may be disposed at the output shaft for adjusting a position of the output shaft relative to at least one of the housing or the first control interface portion of the first brake arm. The housing includes a first wall defining a piston chamber and a second wall defining an accumulator chamber. A radial distance from a movement axis to the second wall is greater than a radial distance from the movement axis to the first wall. | 09-06-2012 |
20120222923 | RETURN SPRING APPARATUS FOR A BICYCLE BRAKE - A bicycle brake apparatus comprises a pair of brake arms and a biasing member having a first portion and a second portion. Each brake arm includes a brake arm mounting portion for mounting the brake arm to a bicycle frame member to pivot around a pivot axis of a corresponding pivot axle, a brake pad mounting portion, and a control interface portion. The first portion of the biasing member is operatively coupled to one of the brake arms so that the brake pad mounting portion of that brake arm is biased in a selected direction, and the second portion of the biasing member is coupled to the pivot axle of the other brake arm. | 09-06-2012 |
20120222924 | INTERFACE MEMBER FOR A BICYCLE BRAKE - An interface member is provided for a bicycle brake having a brake arm and another brake arm, wherein the brake arm pivots around a pivot axis, and wherein the other brake arm pivots around another pivot axis. The interface member comprises a mounting portion, a first operating portion and a second operating portion. The mounting portion is structured to be mounted in close proximity to the pivot axis. The first operating portion extends from the mounting portion for interfacing with the brake arm, and the second operating portion extends from the mounting portion and is structured to extend towards the other brake arm. The second operating portion is axially thick. | 09-06-2012 |
20130174543 | DUAL HYDRAULIC CONTROLLER FOR BICYCLE COMPONENTS - A dual hydraulic controller apparatus comprises a housing, a first master cylinder disposed at the housing, and a second master cylinder disposed at the housing and coupled to the first master cylinder. The first master cylinder includes a first hydraulic chamber and a first piston disposed in the first hydraulic chamber for reciprocal movement therein. The second master cylinder includes a second hydraulic chamber and a second piston disposed in the second hydraulic chamber for reciprocal movement therein. A first operating member is coupled to the first piston for reciprocating the first piston, and a second operating member is coupled to the second piston for reciprocating the second piston. | 07-11-2013 |
20150259022 | BICYCLE STEM - A bicycle stem that includes a tubular main body portion with an internal cavity and a first outer casing holder that is configured to hold an end of a first outer casing of a cable. The first outer casing holder is disposed in the internal cavity. | 09-17-2015 |
20150259023 | COMPRESSION RING AND HEAD PARTS - A compression ring that is configured to be disposed between a bearing and a stem of a bicycle head parts assembly. The compression ring includes a central opening for receiving a steering column, a cut out portion, a first cable passing part disposed radially outwardly from the central opening, and a first positioning part for positioning the compression ring with respect to the stem so that the first cable passing part is aligned with a second cable passing part defined in the stem. | 09-17-2015 |
Patent application number | Description | Published |
20110143463 | VAPOR DEPOSITION METHOD AND VAPOR DEPOSITION APPARATUS - According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet. | 06-16-2011 |
20110198561 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes Al | 08-18-2011 |
20110198583 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains In | 08-18-2011 |
20110198633 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains In | 08-18-2011 |
20110204411 | CRYSTAL GROWTH METHOD AND SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes Ga | 08-25-2011 |
20110215351 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness t | 09-08-2011 |
20120012814 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more. | 01-19-2012 |
20120056157 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer. | 03-08-2012 |
20120056220 | SEMICONDUCTOR LIGHT EMMITING DEVICE - According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction. | 03-08-2012 |
20120132943 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, an electrode, a p-type semiconductor layer and a light emitting layer. The p-type semiconductor layer is provided between the n-type semiconductor layer and the electrode and includes a p-side contact layer contacting the electrode. The light emitting layer is provided between the n-type and the p-type semiconductor layers. The p-side contact layer includes a flat part having a plane perpendicular to a first direction from the n-type semiconductor layer toward the p-type semiconductor layer and multiple protruding parts protruding from the flat part toward the electrode. A height of the multiple protruding parts along the first direction is smaller than one-fourth of a dominant wavelength of light emitted from the light emitting layer. A density of the multiple protruding parts in the plane is 5×10 | 05-31-2012 |
20120138889 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration. | 06-07-2012 |
20120153253 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part. | 06-21-2012 |
20120286237 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER - According to one embodiment, a semiconductor light emitting device includes: an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting part includes: a plurality of well layers including In | 11-15-2012 |
20120286284 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER - According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×10 | 11-15-2012 |
20120299015 | NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE - According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees. | 11-29-2012 |
20120319161 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE WAFER - According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness. | 12-20-2012 |
20130087761 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing | 04-11-2013 |
20130122626 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is formed on the GaN layer, and has a first Al composition ratio. A p-type second AlGaN layer is formed on the first AlGaN layer, has a second Al composition ratio higher than the first Al composition ratio, and contains a larger amount of Mg than the GaN layer and the first AlGaN layer. A second clad layer is formed on the second AlGaN layer, and includes a p-type nitride semiconductor. | 05-16-2013 |
20130200390 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness t | 08-08-2013 |
20130292644 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes Al | 11-07-2013 |
20130309796 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more. | 11-21-2013 |
20140034978 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The second semiconductor layer is provided on a [0001]-direction side of the first semiconductor layer. The light emitting layer includes a first well layer, a second well layer and a first barrier layer. An In composition ratio of the barrier layer is lower than that of the first well layer and the second well layer. The barrier layer includes a first portion and a second portion. The second portion has a first region and a second region. The first region has a first In composition ratio higher than that of the first portion. The second region is provided between the first region and the first well layer. The second region has a second In composition ratio lower than the first In composition ratio. | 02-06-2014 |
20140045289 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor layer. The method can include forming a first nitride semiconductor layer on a substrate in a reactor supplied with a first carrier gas and a first source gas. The first nitride semiconductor layer includes indium. The first carrier gas includes hydrogen supplied into the reactor at a first flow rate and includes nitrogen supplied into the reactor at a second flow rate. The first source gas includes indium and nitrogen and supplied into the reactor at a third flow rate. The first flow rate is not less than 0.07% and not more than 0.15% of a sum of the first flow rate, the second flow rate, and the third flow rate. | 02-13-2014 |
20140077159 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer. | 03-20-2014 |
20140109831 | VAPOR DEPOSITION METHOD AND VAPOR DEPOSITION APPARATUS - According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet. | 04-24-2014 |
20140110667 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes Al | 04-24-2014 |
20140117309 | CRYSTAL GROWTH METHOD AND SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes Ga | 05-01-2014 |
20140124735 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains In | 05-08-2014 |
20140153602 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING A P-TYPE SEMICONDUCTOR LAYER WITH A P-TYPE IMPURITY - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration. | 06-05-2014 |
20140183446 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1×10 | 07-03-2014 |
20140183447 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting element includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer and a light emitting layer. The p-type semiconductor layer includes a first p-side layer of Al | 07-03-2014 |
20140252311 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting element includes a first semiconductor layer of an n-type, a second semiconductor layer of a p-type, and a light emitting unit. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer includes a nitride semiconductor. The light emitting unit is provided between the first semiconductor layer and the second semiconductor layer. The light emitting unit includes a plurality of well layers stacked alternately with a plurality of barrier layers. The well layers include a first p-side well layer most proximal to the second semiconductor layer, and a second p-side well layer second most proximal to the second semiconductor layer. A localization energy of excitons of the first p-side well layer is smaller than a localization energy of excitons of the second p-side well layer. | 09-11-2014 |
20140339500 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer. | 11-20-2014 |
20140346439 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part. | 11-27-2014 |
20150228851 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion. | 08-13-2015 |
20150270445 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING A P-TYPE SEMICONDUCTOR LAYER WITH A P-TYPE IMPURITY - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration. | 09-24-2015 |
20150318435 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1×10 | 11-05-2015 |
20150349199 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER - According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×10 | 12-03-2015 |
Patent application number | Description | Published |
20080237569 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE - The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion. | 10-02-2008 |
20100102296 | SEMICONDUCTOR DEVICE - A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type. | 04-29-2010 |
20100187497 | SEMICONDUCTOR DEVICE - A semiconductor device includes an underlying layer, and a light emitting layer which is formed on the underlying layer and in which a barrier layer made of InAlGaN and a quantum well layer made of InGaN are alternately stacked. | 07-29-2010 |
20110037049 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - Disclosed is a nitride semiconductor light-emitting device including a substrate, a pair of p-type and n-type clad layers formed on the substrate, and an active layer having a single quantum well structure or a multiple quantum well structure, which is sandwiched between the p-type clad layer and the n-type clad layer, and includes a quantum well layer and a pair of barrier layers each having a larger bandgap than that of the quantum well layer, the quantum well layer being sandwiched between the pair of barrier layers. Each of the pair of barrier layers has a multi-layer structure including, starting from the quantum well layer side, a first subbarrier layer having a composition of In | 02-17-2011 |
20110068360 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE - The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion. | 03-24-2011 |
20110220934 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device has a support substrate, a light emitting element, and underfill material. The light emitting element includes a nitride-based group III-V compound semiconductor layer contacted via a bump on the support substrate. The underfill material is disposed between the support substrate and the light emitting element, the underfill material comprising a rib portion disposed outside of an end face of the light emitting element to surround the end surface of the light emitting element. | 09-15-2011 |
20120138895 | SEMICONDUCTOR DEVICE - A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type. | 06-07-2012 |
20120138896 | SEMICONDUCTOR DEVICE - A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type. | 06-07-2012 |
20130196462 | SEMICONDUCTOR DEVICE - A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type. | 08-01-2013 |
20140204970 | SEMICONDUCTOR DEVICE - A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type. | 07-24-2014 |
Patent application number | Description | Published |
20080253302 | NETWORK FORMATION METHOD AND COMMUNICATION APPARATUS - A determination is made as to whether a communication apparatus is a data sender or a data recipient and, based on the results of the determination, it is determined whether the apparatus constructs a network or joins a constructed network. | 10-16-2008 |
20090075594 | COMMUNICATION APPARATUS, COMMUNICATION METHOD, AND COMPUTER PROGRAM FOR CONTROLLING COMMUNICATION APPARATUS - In a system in which a communication adapter installing UPnP is connected to a printer to provide a print service, the communication adapter notifies a device that the printer joins the network or leaves from it, based on determination whether the printer can provide a service. Hence, the present invention can suppress from issuing a service request to a printer which cannot provide the service. | 03-19-2009 |
20090135943 | COMMUNICATION APPARATUS AND CONTROLLING METHOD THEREOF - To determine an appropriate transmission rate more efficiently in communication which uses multiple-input multiple-output technique, a communication apparatus which selects one of a plurality of transmission rates determined by a set of modulation schemes for streams and communicates with an external device using the MIMO technique of performing transmission using a plurality of streams includes a change unit which changes the transmission rate, and a determination unit which determines, based on a transmission power to be allocated to each stream and the modulation scheme of each stream, the transmission rate to be changed by the change unit so as to make the power per bit of each stream at the transmission rate after change remain unchanged or increase. | 05-28-2009 |
20100165964 | WIRELESS COMMUNICATION APPARATUS, A WIRELESS COMMUNICATION METHOD AND A COMPUTER PROGRAM - A wireless communication apparatus that transmits data in certain communication interval to a receiving apparatus, using one or more communication channels among a plurality of adjacent communication channels, is provided. The apparatus includes: a setting unit configured to set the one or more communication channels for transmitting the data; a transmission unit configured to transmit the data using the one or more set communication channels; and a detection unit configured to detect interference with other wireless communication apparatuses, when the transmission unit transmits the data using the one or more set communication channels; wherein the setting unit changes the number of the one or more communication channels based on a time duration that the data transmission has been restrained due to the detected interference, and the communication interval. | 07-01-2010 |
20100189057 | COMMUNICATION CHANNEL DETERMINATION METHOD AND A DETERMINATION APPARATUS - By controlling a plurality of communication apparatuses, when determining the communication channel used by each apparatus, conducting determination of channel allocation priority order of communication apparatuses, based on the extracted load information of the communication apparatus. Based on the determined channel allocation priority order, setting the communication channels as they should be set, in case the other communication apparatus can not conduct communication in the channels the aforementioned channel is set, the channel is allocated as the channel used by the communication apparatus. | 07-29-2010 |
20100315676 | COMMUNICATION APPARATUS AND CONTROL METHOD OF COMMUNICATION APPARATUS - An apparatus includes a recognition unit configured to recognize a function included in a communication partner and a determination unit configured to determine processing, which the communication partner performs on transmission data, according to the recognized function and a type of the transmission data. | 12-16-2010 |
20120013513 | LOOP ANTENNA - A loop antenna includes a parasitic element arranged at a position almost concentric to a loop element and having an opening portion smaller than the half perimeter of the loop element at a position opposite to the feeding point of the loop element. | 01-19-2012 |
20140375524 | ANTENNA AND COMMUNICATION APPARATUS - The present invention provides an antenna in which first and second conductors each having a first width are spirally arranged on first and second planes, respectively, such that a conductor-to-conductor distance is equal to a second width, and an inter ends of spirals of the first and second conductors are connected with a conductor. In this antenna, the direction in which the spiral of the first conductor runs from its outer end to its inter end and the direction in which the spiral of the second conductor runs from its inter end to its outer end correspond to each other, the first width is greater than or equal to the second width, and the first and second conductors are alternately arranged in at least a portion thereof as viewed in a radius direction from an axis of the spiral. | 12-25-2014 |
20150061401 | WIRELESS POWER TRANSFER SYSTEM, WIRELESS POWER TRANSFER APPARATUS, WIRELESS POWER TRANSFER METHOD, CONTROL METHOD FOR THE WIRELESS POWER TRANSFER APPARATUS, AND STORAGE MEDIUM STORING PROGRAM - The disclosure relates to a wireless power transfer system composed of a power transmission apparatus including power transmission elements configured to transmit power and a power reception apparatus including power reception elements configured to receive the power. The wireless power transfer system communicates information related to the power transmission elements or the power reception elements between the power transmission apparatus and the power reception apparatus and selects a combination of the power transmission element and the power reception element used for wireless power transfer among plural combinations of the power transmission elements and the power reception elements by using the communicated information. | 03-05-2015 |
20150370509 | COMMUNICATION APPARATUS AND CONTROL METHOD OF COMMUNICATION APPARATUS - An apparatus includes a recognition unit configured to recognize a function included in a communication partner and a determination unit configured to determine processing, which the communication partner performs on transmission data, according to the recognized function and a type of the transmission data. | 12-24-2015 |