Patent application number | Description | Published |
20100059844 | SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE DESIGNING METHOD - A solid-state imaging device includes light receiving sections which are arranged in an image area on a semiconductor substrate at the same pitch and which light exiting from an imaging optical system enters, condensing lenses respectively arranged above the light receiving sections, and light shielding sections each of which is provided at one end of each of the light receiving sections. The condensing lenses are arranged in a peripheral portion in a first direction in the image area at a first pitch, and arranged in a peripheral portion in a second direction opposite the first direction at a second pitch which is smaller than the first pitch. | 03-11-2010 |
20100128156 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a plurality of unit pixels. Each unit pixel has a photodiode, a reading transistor, a floating diffusion, a capacitance adding transistor, and a reset transistor. The reading transistor reads signal electric charges from the photodiode. The floating diffusion accumulates the signal electric charges read from the reading transistor. The capacitance adding transistor selectively adds capacitance to the floating diffusion. The reset transistor resets an electric potential of the floating diffusion. | 05-27-2010 |
20110001860 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a solid-state imaging device includes a pixel array, load transistor, first switch transistor, and second switch transistor. The pixel array includes a plurality of unit pixels arranged in a matrix. Each unit pixel includes a photodiode, a read transistor, a reset transistor to which one of a first voltage and a second voltage, and an amplification transistor. The second switch transistor outputs a bias voltage to the vertical signal line. | 01-06-2011 |
20110001861 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes an imaging region, and a control circuit. In a first operation mode, the control circuit performs control in which signal charges of first and second photodiodes are transmitted to a floating diffusion. In a second operation mode, the control circuit performs control in which a signal charge of the second photodiode is transmitted to the floating diffusion. | 01-06-2011 |
20110140182 | SOLID-STATE IMAGING DEVICE WHICH CAN EXPAND DYNAMIC RANGE - According to one embodiment, a solid-state imaging device includes an area and color filters. The area includes pixels. Each of the pixels includes a first photodiode, a first read transistor, a second photodiode, a second read transistor, a floating diffusion, a reset transistor, and an amplifying transistor. The first photodiode performs photoelectric conversion. The first read transistor reads a signal charge. The second photodiode has a photosensitivity lower than the first photodiode. The second read transistor reads a signal charge. The floating diffusion stores the signal charges. The reset transistor resets a potential of the floating diffusion. The amplifying transistor amplifies the potential of the floating diffusion. The color filters include a first and a second filters. The relationship QSAT | 06-16-2011 |
20110141333 | SOLID-STATE IMAGING DEVICE AND METHOD FOR DRIVING THE SAME - According to one embodiment, a back side illumination type solid-state imaging device includes an imaging area in which a plurality of unit pixels each including a photoelectric conversion section and a signal scan circuit section are arranged on a semiconductor substrate, and a light illumination surface formed on a surface of the semiconductor substrate located opposite a surface of the semiconductor substrate on which the signal scan circuit section is formed, wherein the unit pixel comprises a high-sensitivity pixel and a low-sensitivity pixel with a lower sensitivity than the high-sensitivity pixel. And each of the high-sensitivity pixel and the low-sensitivity element comprises a first pixel separation layer located on the light illumination surface side in the semiconductor substrate to separate the pixels from each other. | 06-16-2011 |
20110215223 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device including a plurality of pixels two-dimensionally arranged at a preset pitch in a semiconductor substrate is provided. Each of the pixels is configured to include first and second photodiodes that photoelectrically convert incident light and store signal charges obtained by conversion, a first micro-lens that focuses light on the first photodiode, and a second micro-lens that focuses light on the second photodiode. The saturation charge amount of the second photodiode is larger than that of the first photodiode. Further, the aperture of the second micro-lens is smaller than that of the first micro-lens. | 09-08-2011 |
20110228149 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a photodiode module in which first photodiodes corresponding to high-sensitivity pixels and second photodiodes corresponding to low-sensitivity pixels are alternately arranged at preset pitch P in a semiconductor substrate, high-sensitivity pixel interconnection lines formed at preset pitch C on the substrate, low-sensitivity pixel interconnection lines that are formed at preset pitch D on the substrate, high-sensitivity pixel color filters formed at preset pitch A on the opposite side of the respective interconnection lines with respect to the substrate, and low-sensitivity pixel interconnection lines that are formed at preset pitch B on the other side of the interconnection lines with respect to the substrate. The relationship between the above pitches is set to D=B | 09-22-2011 |
20110234875 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes first and second pixel portions, first and second transfer transistors, first and second accumulation portions, an element isolation region, first and second amplifier transistors, and a first and second signal lines. The first and second pixel portions include photoelectric conversion elements, respectively. The first and second transfer transistors transfer first and second charges photoelectrically converted by the first and second pixel portions, respectively. The first and second accumulation portions are interposed between the first and second pixel portions, and accumulate the first and second charges, respectively. The element isolation region is interposed between the first and second accumulation portions. The first and second amplifier transistors amplify voltages generated in accordance with the first and second charges accumulated in the first and second accumulation portions, respectively. The first and second signal lines output signal voltages amplify by the amplifier transistors, respectively. | 09-29-2011 |
20120286386 | SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE DESIGNING METHOD - A solid-state imaging device includes light receiving sections which are arranged in an image area on a semiconductor substrate at the same pitch and which light exiting from an imaging optical system enters, condensing lenses respectively arranged above the light receiving sections, and light shielding sections each of which is provided at one end of each of the light receiving sections. The condensing lenses are arranged in a peripheral portion in a first direction in the image area at a first pitch, and arranged in a peripheral portion in a second direction opposite the first direction at a second pitch which is smaller than the first pitch. | 11-15-2012 |
20140077069 | SOLID-STATE IMAGING DEVICE WHICH CAN EXPAND DYNAMIC RANGE - According to one embodiment, a solid-state imaging device includes an area and color filters. The area includes pixels. Each of the pixels includes a first photodiode, a first read transistor, a second photodiode, a second read transistor, a floating diffusion, a reset transistor, and an amplifying transistor. The first photodiode performs photoelectric conversion. The first read transistor reads a signal charge. The second photodiode has a photosensitivity lower than the first photodiode. The second read transistor reads a signal charge. The floating diffusion stores the signal charges. The reset transistor resets a potential of the floating diffusion. The amplifying transistor amplifies the potential of the floating diffusion. The color filters include a first and a second filters. The relationship QSAT1>QSAT2 is satisfied. When a saturation level of the first filter is denoted by QSAT1 and a saturation level of the second filter is denoted by QSAT2. | 03-20-2014 |