Patent application number | Description | Published |
20080242412 | Operating apparatus for game machine - An operating apparatus for game machine includes a depressing member, and a main body of the depressing member is provided with three engaging protrusions and two depressing protrusions that downwardly protrude. For example, the two depressing protrusions are provided between the three engaging protrusions. In response to a beating operation by a player, the right side of the depressing member is depressed, and then, an engaging portion of the engaging protrusion at the left side is engaged with a rear surface of an upper surface panel. Accordingly, the depressing member is sure to be depressed at the right side without being upwardly actuated, and a rubber switch depressed by the depressing protrusion is brought into contact with a board. At this time, a contact provided on the board and a contact provided on the rubber switch are brought into contact with each other, and an operation signal according to the beating operation is output to the game machine. | 10-02-2008 |
20110010884 | LENS CLEANER - A lens cleaner ( | 01-20-2011 |
20130190091 | OPERATING APPARATUS FOR GAME MACHINE - An operating apparatus for game machine includes a depressing member, and a main body of the depressing member is provided with three engaging protrusions and two depressing protrusions that downwardly protrude. For example, the two depressing protrusions are provided between the three engaging protrusions. In response to a beating operation by a player, the right side of the depressing member is depressed, and then, an engaging portion of the engaging protrusion at the left side is engaged with a rear surface of an upper surface panel. Accordingly, the depressing member is sure to be depressed at the right side without being upwardly actuated, and a rubber switch depressed by the depressing protrusion is brought into contact with a board. At this time, a contact provided on the board and a contact provided on the rubber switch are brought into contact with each other, and an operation signal according to the beating operation is output to the game machine. | 07-25-2013 |
Patent application number | Description | Published |
20090078995 | Semiconductor device and method of manufacturing semiconductor device - A semiconductor device includes a first conductivity type layer of a first conductivity type, a body layer of a second conductivity type formed on the first conductivity type layer, a gate trench passing through the body layer so that the deepest portion thereof reaches the first conductivity type layer, a source region of the first conductivity type formed around the gate trench on the surface layer portion of the body layer, a gate insulating film formed on the bottom surface and the side surface of the gate trench, and a gate electrode embedded in the gate trench through the gate insulating film, and the bottom surface of the gate electrode and the upper surface of the first conductivity type layer are flush with each other. | 03-26-2009 |
20120199901 | SEMICONDUCTOR DEVICE - A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 Å or smaller. The interface between the source electrode and the source region is silicidized. | 08-09-2012 |
20140363939 | METHOD OF FORMING A SEMICONDUCTOR DEVICE - A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 Å or smaller. The interface between the source electrode and the source region is silicidized. | 12-11-2014 |