Nabki

Frederic Nabki, Montreal CA

Patent application number	Description	Published
20110027930	Low Temperature Wafer Level Processing for MEMS Devices - Microelectromechanical systems (MEMS) are small integrated devices or systems that combine electrical and mechanical components. It would be beneficial for such MEMS devices to be integrated with silicon CMOS electronics and packaged in controlled environments and support industry standard mounting interconnections such as solder bump through the provisioning of through-wafer via-based electrical interconnections. However, the fragile nature of the MEMS devices, the requirement for vacuum, hermetic sealing, and stresses placed on metallization membranes are not present in packaging conventional CMOS electronics. Accordingly there is provided a means of reinforcing the through-wafer vias for such integrated MEMS-CMOS circuits by in filling a predetermined portion of the through-wafer electrical vias with low temperature deposited ceramic materials which are deposited at temperatures below 350° C., and potentially to below 250° C., thereby allowing the re-inforcing ceramic to be deposited after fabrication of the CMOS electronics.	02-03-2011

Patent application number	Description	Published
20100279451	DIRECT CONTACT HEAT CONTROL OF MICRO STRUCTURES - A method of providing thermal tuning of microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is disclosed. A heater is provided integrated with the MEMS for controllably heating the MEMS to control performance characteristics thereof.	11-04-2010

Patent application number	Description	Published
20090160040	LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES - A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method provides for processing and manufacturing is steps limiting a maximum exposure of an integrated circuit upon which the MEMS is manufactured during MEMS manufacturing to below a temperature wherein CMOS circuitry is adversely affected, for example below 400° C., and sometimes to below 300° C. or 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronic integrated circuits, such as Si CMOS circuits.	06-25-2009