Nabeya
Ayao Nabeya, Susono-Shi JP
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20100236918 | FILM FORMING APPARATUS AND FILM FORMING METHOD - A film formation apparatus and film formation method that improve film thickness uniformity. A rotation mechanism holds a target having a sputtered surface in a state inclined relative to a surface of a substrate. The rotation mechanism rotatably supports the target about an axis extending along a normal of the sputtered surface. The target supported by the rotation mechanism is sputtered to form a thin film on the surface of the substrate. When forming the thin film, the rotation mechanism maintains the rotational angle of the target. | 09-23-2010 |
Kenichi Nabeya, Kawasaki JP
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20100251194 | APPARATUS FOR AIDING DESIGN OF SEMICONDUCTOR DEVICE AND METHOD - An apparatus for aiding a design of a semiconductor device including a plurality of wirings, the apparatus has a display, a memory that stores information corresponding to the wirings, and a processor that obtains a power consumption value of each wiring in reference to the information about the wirings stored in the memory, and displays each of the wirings on the display in a manner that each wiring is distinguishable as to the obtained power consumption value of the each wiring. | 09-30-2010 |
Osamu Nabeya, Chigasaki-Shi JP
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20090061748 | Substrate holding apparatus - The present invention relates to a substrate holding apparatus for holding and pressing a substrate against a polishing surface. The substrate holding apparatus includes a top ring body for holding the substrate, an elastic pad for contacting the substrate, and a support member for supporting the elastic pad. The substrate holding apparatus further includes a contact member mounted on a lower surface of the support member and disposed in a space formed by the elastic pad and the support member. The contact member has an elastic membrane for contacting the elastic pad. A first pressure chamber is defined in the contact member, and a second pressure chamber is defined outside of the contact member. The substrate holding apparatus also includes a fluid source for independently supplying a fluid into, or creating a vacuum in, the first pressure chamber and the second pressure chamber. | 03-05-2009 |
Shin Nabeya, Wako-Shi JP
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20120247855 | ELECTRIC VEHICLE - In an electric three-wheeled vehicle, a centrifugal clutch transmits rotary driving power to a counter shaft when the revolution speed of a motor exceeds a prescribed value. The clutch is coaxially located at one end of a motor output shaft. A counter shaft is located inside the outside diameter of the motor in a side view of the vehicle. The motor output shaft, counter shaft, and axles are arranged from a vehicle forward side in the order of mention. The axis center of the counter shaft is located below a line connecting the axis center of the motor output shaft and the axis center of the axle in a side view of the vehicle. | 10-04-2012 |
Shunichi Nabeya, Tsukuba-Shi JP
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20110318488 | ORGANORUTHENIUM COMPOUND FOR CHEMICAL DEPOSITION AND CHEMICAL DEPOSITION PROCESS USING THE ORGANORUTHENIUM COMPOUND - An object of the present invention is to provide an organoruthenium compound which has good film formation characteristics as an organoruthenium compound for chemical deposition, has a high vapor pressure, and can easily form a film even when hydrogen is used as a reactant gas. The present invention relates to an organoruthenium compound, dicarbonyl-bis(5-methyl-2,4-hexanediketonato)ruthenium (II) which can have isomers 1 to 3, wherein the content of the isomer 2 is 30% by mass or more, the content of the isomer 3 is 30% by mass or less, and the balance is the isomer 1. | 12-29-2011 |
Shunichi Nabeya, Ibaraki JP
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20130344243 | Organic Platinum Compound For Chemical Vapor Deposition, And Chemical Vapor Deposition Method Using Organic Platinum Compound - The present invention is an organoplatinum compound for producing a platinum thin film or a platinum compound thin film by chemical vapor deposition, wherein the organoplatinum compound is represented by the following formula, and includes a divalent platinum atom, and hexadiene or a hexadiene derivative and alkyl anions coordinated to the divalent platinum atom. In the following formula, R | 12-26-2013 |
20150030772 | CHEMICAL VAPOR DEPOSITION RAW MATERIAL COMPRISING ORGANOPLATINUM COMPOUND, AND CHEMICAL VAPOR DEPOSITION METHOD USING THE CHEMICAL VAPOR DEPOSITION RAW MATERIAL - A chemical vapor deposition raw material for producing a platinum thin film or a platinum compound thin film by a chemical vapor deposition method, wherein the chemical vapor deposition raw material includes an organoplatinum compound having cyclooctadiene and alkyl anions coordinated to divalent platinum, and the organoplatinum compound is represented by the following formula. Here, one in which R | 01-29-2015 |
20150087851 | METHOD FOR RECYCLING ORGANIC RUTHENIUM COMPOUND FOR CHEMICAL VAPOR DEPOSITION - The present invention is a method for recycling an organic ruthenium compound for chemical vapor deposition, wherein an unreacted organic ruthenium compound is extracted from a used raw material through a thin film formation process. The method includes the following steps (a) to (c). (a) A modification step in which the used raw material and a hydrogenation catalyst are brought into contact with each other in a hydrogen atmosphere, thereby hydrogenating an oxidized organic ruthenium compound in the used raw material. (b) An adsorption step in which the used raw material and an adsorbent are brought into contact with each other, thereby removing impurities in the used raw material. (c) A restoration step in which the used raw material is heated at a temperature that is not lower than −100° C. and not higher than −10° C. with respect to the decomposition temperature of the organic ruthenium compound for eight hours or more, thereby adjusting the ratio of the isomers of the organic ruthenium compound in the used raw material. | 03-26-2015 |
Shunichi Nabeya, Tsukuba-Shi, Ibaraki JP
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20160115587 | CHEMICAL VAPOR DEPOSITION RAW MATERIAL CONTAINING ORGANIC NICKEL COMPOUND, AND CHEMICAL VAPOR DEPOSITION METHOD USING THE CHEMICAL VAPOR DEPOSITION RAW MATERIAL - The present invention provides a chemical vapor deposition raw material, which has a low melting point, has heat stability such that no thermal decomposition occurs during vaporization, readily decomposes at low temperature during film-formation, and can stably form a nickel thin-film having fewer impurities. The present invention relates to a chemical vapor deposition raw material containing an organic nickel compound, in which a cyclopentadienyl group or a derivative thereof is coordinated to nickel, and a cycloalkenyl group having one allyl group or a derivative thereof is coordinated to the carbon skeleton of cycloalkyl. | 04-28-2016 |
Shunpei Nabeya, Sagamihara-Shi JP
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20140091567 | CONNECTOR FOR FUEL TANK - A connector attached to a fuel tank for connecting a ventilation flow passage thereof to the fuel tank is provided. The connector includes an upper chamber provided with a first communication portion relative to the ventilation flow passage; and a lower chamber provided with a second communication portion relative to the fuel tank, and a third communication portion relative to the upper chamber. A mortar-shaped portion narrowing toward a lower side is formed in a bottom portion of the upper chamber. The third communication portion is formed in a bottom of the mortar-shaped portion, and recesses and protrusions are formed in a wall face of the mortar-shaped portion. | 04-03-2014 |