Naas

Nico Naas, Karlsruhe DE

Patent application number	Description	Published
20100224470	ACTUATING ELEMENT - An actuating element for controlling an electronic device is providing. The actuating element including a front cover having an actuating surface to be actuated by a user and a support structure adapted to be coupled to the front cover. The support structure having guiding rips that guide the movement of the actuating element in a housing upon actuation of the actuating element. The front cover having centering shoulders that contact the guiding rips for positioning the support structure relative to the front cover when the front cover is coupled to the support structure.	09-09-2010

Patent application number	Description	Published
20090314198	DEVICE AND METHOD FOR PRODUCTION OF SEMICONDUCTOR GRADE SILICON - This invention relates to a device and method for production of ingots of semiconductor grade silicon, including solar grade silicon, where the presence of oxygen in the hot zone is substantially reduced or eliminated by employing materials void of oxides in the hot zone of the melting and crystallisation process. The method may be employed for any known process including for ciystallising semiconductor grade silicon ingots, including solar grade silicon ingots, such as the Bridgman process, the block-casting process, and the CZ-process for growth of monocrystalline silicon crystals. The invention also relates to devices for carrying out the melting and crystallisation processes, where the materials of the hot zone are void of oxides.	12-24-2009

Patent application number	Description	Published
20090208400	METHOD AND CRUCIBLE FOR DIRECT SOLIDIFICATION OF SEMICONDUCTOR GRADE MULTI-CRYSTALLINE SILICON INGOTS - This invention relates to a method for direct solidification of semiconductor grade multi-crystalline silicon ingots allowing improved control with the solidification process and reduced levels of oxygen and carbon impurities in the ingot, by crystallizing the semiconductor grade silicon ingot, optionally also including the melting of the feed silicon material, in a crucible made of silicon nitride, or in a crucible made of a composite of silicon carbide and silicon nitride, and where the wall thickness of the bottom of the crucible is dimensioned such that the thermal resistance across the bottom is reduced to a level of at least the same order as thermal resistance across the support below carrying the crucible or lower. The invention also relates to crucibles which are made of silicon nitride, or of a composite of silicon carbide and silicon nitride, and where the wall thickness of the bottom of the crucible is dimensioned such that the thermal resistance across the bottom is reduced to a level of at least the same order as thermal resistance across the support below carrying the crucible or lower.	08-20-2009