Myungsun

Myungsun Kim, Hwaseong-Si KR

Patent application number	Description	Published
20100230758	SEMICONDUCTOR DEVICE WITH IMPROVED STRESSOR SHAPE - A formation method and resulting strained semiconductor device are provided, the formation method including forming transistors on a substrate, each transistor having a gate disposed over a channel region, etching or annealing an elongated trench between adjacent channel regions, where the trench has a lower boundary that is deeper towards its ends than towards its center, and conformably embedding an elongated stress region in the trench between adjacent channel regions; and the resulting strained semiconductor device including transistors, each having a gate disposed over a channel region, and elongated stress regions disposed between adjacent channel regions, wherein each of the elongated stress regions has a lower boundary that is deeper towards its ends than towards its center.	09-16-2010

Patent application number	Description	Published
20100080973	LOW TEMPERATURE, FAST HARDENING COMPOSITION FOR PREPARING PROTECTING FILM, PROTECTING FILM PREPARED THEREFROM, AND SUBSTRATE COMPRISING THE SAME - The present invention relates to a composition for preparing an excellent protecting film with high strength, wear resistance, and excellent barrier property by low temperature hardening, a protecting film prepared therefrom, a substrate comprising the same, and a component or device comprising the same. The composition comprises an organosiloxane polymer a), a photobase generator b), and an organic solvent c).	04-01-2010

Patent application number	Description	Published
20090169774	Retardation film, and polarizing plate and liquid crystal display comprising the same - Disclosed are a retardation film including a polymer resin; and an optically anisotropic compound having a silicon group, and a polarizing plate including the retardation film. Also, disclosed is a liquid crystal display including the retardation film and/or the polarizing plate.	07-02-2009