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Myoung-Hwan
Myoung-Hwan Cha, Uiwang-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100099043 | Positive Photosensitive Resin Composition - Disclosed is a positive photosensitive resin composition that includes (A) a first polybenzoxazole precursor that includes: a repeating unit of Chemical Formula 1 and a thermally polymerizable functional group at least one terminal end; (B) a second polybenzoxazole precursor that includes a repeating unit of Chemical Formula 3; (C) a photosensitive diazoquinone compound; (D) a silane compound; and (E) a solvent. | 04-22-2010 |
| 20110003248 | Positive photosensitive resin composition - A positive photosensitive resin composition according to one embodiment of the present invention includes a polyamic acid or a polyamic acid ester compound including a repeating unit represented by Formula 1 defined in this specification, a photosensitive diazoquinone compound, a silane compound, a phenol compound, and a solvent. The positive photosensitive resin composition can be cured at a low temperature of 260° C. or less, and can have high sensitivity, resolution, residue removal, substrate adherence, and pattern-forming capabilities, and low film shrinkage. | 01-06-2011 |
| 20110159428 | Positive Type Photosensitive Resin Composition - This disclosure relates to a positive photosensitive resin composition including (A) a resin precursor including a polybenzoxazole precursor, a polyamic acid, or a combination thereof, (B) a dissolution-controlling agent having a boiling point ranging from about 210° C. to about 400° C. and a polarity ranging from about 1D to about 4D, (C) an acid generator, (D) a silane-based compound, and (E) a solvent. The polybenzoxazole precursor includes a repeating unit represented by Chemical Formula 1, or both of repeating units represented by Chemical Formulae 1 and 2 and has a thermally polymerizable functional group at least one end. The polyamic acid includes a repeating unit of Chemical Formulae 50 and 51. | 06-30-2011 |
Myoung-Hwan Lee, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20110124888 | STYRYLBENZOFURAN DERIVATIVES AS INHIBITORS FOR BETA-AMYLOID FIBRIL FORMATION AND PREPARATION METHOD THEREOF - The present invention relates to a novel compound which efficiently inhibits the formation of beta-amyloid fibrils in the brain to be useful for preventing or treating a degenerative brain disease, a method for preparing same, and a pharmaceutical composition comprising same as an active ingredient. | 05-26-2011 |
Myoung-Hwan Oh, Yuseong-Gu KR
| Patent application number | Description | Published |
|---|---|---|
| 20110070737 | METHOD FOR PREPARING OF CERIUM OXIDE POWDER FOR CHEMICAL MECHANICAL POLISHING AND METHOD FOR PREPARING OF CHEMICAL MECHANICAL POLISHING SLURRY USING THE SAME - The present invention relates to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same, and more particularly, to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same in which the specific surface area of the powder is increased by preparing a cerium precursor, and then decomposing and calcinating the prepared cerium precursor. The pore distribution is controlled to increase the chemical contact area between a polished film and a polishing material, thereby reducing polishing time while the physical strength of powder is decreased, which remarkably reduces scratches on a polished film. | 03-24-2011 |
Myoung-Hwan Oh, Jijok-Dong KR
| Patent application number | Description | Published |
|---|---|---|
| 20080236050 | Cerium oxide powder, method for preparing the same, and CMP slurry comprising the same - Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and/or within-wafer non-uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed. | 10-02-2008 |
Myoung-Hwan Seo, Daejeon Metropolitan City KR
| Patent application number | Description | Published |
|---|---|---|
| 20090209268 | LOCATION SENSING SYSTEM AND METHOD FOR MOBILE COMMUNICATION SYSTEM - A location sensing system and method for a mobile communication system is provided for maintaining location sensing service with the support of mobile nodes when there is an insufficient number of anchor nodes for reference points. A location sensing method for a mobile communication system includes discovering, at a source mobile node, anchor nodes in a vicinity; discovering, when a number of discovered anchor nodes is less than a predetermined number of reference nodes required for location sensing, neighboring mobile nodes; selecting at least one of neighboring mobile nodes as a reference mobile node; and computing a location of the source mobile node in cooperation with the predetermined number of reference nodes including the discovered anchor nodes and the reference mobile node. | 08-20-2009 |