| Patent application number | Description | Published |
|---|
| 20100131041 | Intraluminal Stent Graft - A method of making an tubular intraluminal graft in the form of a tubular diametrically adjustable stent having a tubular covering of porous expanded polytetrafluoroethylene which is less than 0.10 mm thick. The covering may be on the exterior surface of the stent, or on the interior surface of the stent, or both. The covering may be affixed to the stent by an adhesive which is preferably fluorinated ethylene propylene. | 05-27-2010 |
| 20100212809 | Intraluminal Stent Graft - A method of making a tubular intraluminal graft in the form of a tubular diametrically adjustable stent having a tubular covering of porous expanded polytetrafluoroethylene which is less than 0.10 mm thick. The covering may be on the exterior surface of the stent, or on the interior surface of the stent, or both. The covering may be affixed to the stent by an adhesive which is preferably fluorinated ethylene propylene. | 08-26-2010 |
| 20100217375 | Intraluminal Stent Graft - A method of making an tubular intraluminal graft in the form of a tubular diametrically adjustable stent having a tubular covering of porous expanded PTFE which is less than 0.10 mm thick. The covering may be on the exterior surface of the stent, or on the interior surface of the stent, or both. The covering may be affixed to the stent by an adhesive which is preferably fluorinated ethylene propylene. | 08-26-2010 |
| 20100218882 | Intraluminal Stent Graft - A method of making a tubular intraluminal graft in the form of a tubular diametrically adjustable stent having a tubular covering of porous expanded polytetrafluoroethylene which is less than 0.10 mm thick. The covering may be on the exterior surface of the stent, or on the interior surface of the stent, or both. The covering may be affixed to the stent by an adhesive which is preferably fluorinated ethylene propylene. | 09-02-2010 |
| 20100218885 | Intraluminal Stent Graft - A method of making an tubular intraluminal graft in the form of a tubular diametrically adjustable stent having a tubular covering of porous expanded PTFE which is less than 0.10 mm thick. The covering may be on the exterior surface of the stent, or on the interior surface of the stent, or both. The covering may be affixed to the stent by an adhesive which is preferably fluorinated ethylene propylene. | 09-02-2010 |
| 20100222865 | Intraluminal Stent Graft - A method of making a tubular intraluminal graft in the form of a tubular diametrically adjustable stent having a tubular covering of porous expanded PTFE which is less than 0.10 mm thick. The covering may be on the exterior surface of the stent, or on the interior surface of the stent, or both. The covering may be affixed to the stent by an adhesive which is preferably fluorinated ethylene propylene. | 09-02-2010 |
| 20100222874 | Intraluminal Stent Graft - A method of making a tubular intraluminal graft in the form of a tubular diametrically adjustable stent having a tubular covering of porous expanded polytetrafluoroethylene which is less than 0.10 mm thick. The covering may be on the exterior surface of the stent, or on the interior surface of the stent, or both. The covering may be affixed to the stent by an adhesive which is preferably fluorinated ethylene propylene. | 09-02-2010 |
| Patent application number | Description | Published |
|---|
| 20090146292 | SEMICONDUCTOR DEVICE THERMAL CONNECTION - A semiconductor device thermal connection used to remove heat from a semiconductor device, such as an integrated circuit, includes a metallic barrier layer on the semiconductor device, and a high thermal conductivity material on the metallic barrier layer that joins the semiconductor device to a thermal heat spreader. The metallic barrier layer may be one or more sputtered layers, and the high thermal conductivity material may be a metallic material, for instance including indium, that is soldered onto the sputtered material. The high thermal conductivity material may form a primary thermal connection in conducting heat away from the semiconductor device. A secondary thermal connection may be made between the heat spreader and a heat sink. The secondary thermal connection may include a compressible solid carbon fiber material. A diaphragm may be used to contain the carbon fiber material, to prevent carbon fibers from coming into contact with the semiconductor device. | 06-11-2009 |
| 20090215297 | INTERNALLY-SEALED ELECTRICAL CONNECTOR - An internally-sealed pass-through electrical connector includes electrical conductors for carrying electrical signals through the electrical connector, a connector body or shell surrounding the connector, and an organic adhesive material within the body or shell that fills space around the conductors and between the conductors and the connector body. The connector body includes a metal portion, such as an aluminum portion, that has a roughened surface to better allow the adhesive to adhere to it. The roughened surface may be a grit blasted surface. The connector body may also include a plastic portion, such as a molded lead organizer, to aid in positioning the leads. The adhesive may have a coefficient of thermal expansion that is matched to that of the metal portion of the connector body or shell. The organic adhesive may be an epoxy material. The electrical connector may have any of a variety of configurations. | 08-27-2009 |
| 20090257196 | Methods and Apparatus for Heat Transfer for a Component - Methods and apparatus for transferring heat according to various aspects of the present invention operate in conjunction with a heat source on a substrate. In one embodiment, a lid is adapted to engage the substrate. The lid may comprise a thermally conductive rigid body and one or more hardstops configured to limit a bond line distance between the rigid body and the heat source. A thermal interface material may be disposed in the bond line between the heat source and the lid. The thermal interface material may be adapted to provide a thermally conductive adhesive bond between the lid and the heat source. | 10-15-2009 |
