Patent application number | Description | Published |
20090069173 | METHOD AND APPARATUS FOR DEPOSITING PARTICLES - A supporting method for supporting a metal particle including at least two elements on a surface of a plurality of granular supports in a decompression device, the supporting method supporting the metal particle whose particle diameter being smaller than a grain size of the granular support comprises holding the plurality of granular supports in a container and rotating a stirring device and/or the container, a stirring period in which the relative position among the plurality of granular supports are changed and a non-stirring period in which the relative position among the plurality of granular supports are not changed being altered by the rotating, wherein the decompression device comprises, an evaporation source for evaporating elements to form an alloy particle, the container for holding the plurality of granular supports in the decompression device so that a relative position among granular supports is able to be changed, a rotating device for rotating the container and the stirring device disposed in the container. | 03-12-2009 |
20130081410 | REFRIGERATION DEVICE, HYDROGENATION DEVICE FOR NITROGEN, AND LEAKED GAS REMOVING METHOD - A refrigeration device of an embodiment includes: a heat-insulating vacuum chamber; a refrigerator cryogenic unit that is provided in the heat-insulating vacuum chamber and is cooled to a lower temperature than 195 K; a catalytic electrode that is provided in the heat-insulating vacuum chamber and contains a transition metal at least in part of a surface thereof; a power supply that applies a voltage to the catalytic electrode; and a heating unit that is provided in the heat-insulating vacuum chamber and heats the catalytic electrode. In this refrigeration device, the catalytic electrode is insulated from the heat-insulating vacuum chamber and the heating unit, and the heating unit is insulated from the heat-insulating vacuum chamber and the catalytic electrode. | 04-04-2013 |
20140053902 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element of an embodiment includes a p-type light absorbing layer containing Cu, at least one or more Group IIIb elements selected from the group including Al, In and Ga, and at least one or more elements selected from the group including O, S, Se and Te; and an n-type semiconductor layer formed on the p-type light absorbing layer and represented by any one of Zn | 02-27-2014 |
20140053903 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element of an embodiment includes: a light absorbing layer containing copper (Cu), at least one Group IIIb element selected from the group including aluminum (Al), indium (In) and gallium (Ga), and sulfur (S) or selenium (Se), and having a chalcopyrite structure; and a buffer layer formed from zinc (Zn) and oxygen (O) or sulfur (S), wherein the molar ratio represented by S/(S+O) of the buffer layer is equal to or greater than 0.7 and equal to or less than 1.0, and the crystal grain size is equal to or greater than 10 nm and equal to or less than 100 nm. | 02-27-2014 |
20140053904 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element of an embodiment includes: a light absorbing layer containing Cu, at least one Group IIIb element selected from the group including Al, In and Ga, and S or Se, and having a chalcopyrite structure; and a buffer layer formed from Zn and O or S, in which the ratio S/(S+O) in the area extending in the buffer layer up to 10 nm from the interface between the light absorbing layer and the buffer layer, is equal to or greater than 0.7 and equal to or less than 1.0. | 02-27-2014 |
20140083496 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element includes a photoelectric conversion layer, a transparent electrode, an intermediate layer, and a window layer. The photoelectric conversion layer includes a homojunction of a p-type compound semiconductor layer and an n-type compound semiconductor layer. The p-type and n-type compound semiconductors include group I-III-VI | 03-27-2014 |
20140144502 | PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT, AND SOLAR CELL - A photoelectric conversion element of an embodiment includes: a back electrode; a heterojunction-type light absorbing layer on the back electrode, containing Cu, selected from Al, In and Ga, and selected from Se and S, and having a chalcopyrite structure; a transparent electrode on the light absorbing layer, wherein aback electrode side-part of the light absorbing layer is of p-type, and a transparent electrode-side part of the light absorbing layer is of n-type, the light absorbing layer has a part with an average crystal grain size of 1,000 nm to 3,000 nm in the vicinity of the back electrode, and the light absorbing layer has apart with an average crystal grain size of at most 500 nm in the vicinity of the transparent electrode or the light absorbing layer has an amorphous part in the vicinity of the transparent electrode. | 05-29-2014 |
20140144510 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element of an embodiment includes: a p-type light absorbing layer having a chalcopyrite structure; an n-type semiconductor layer on the p-type light absorbing layer; an oxide layer on the n-type semiconductor layer; and a transparent electrode on the oxide layer. | 05-29-2014 |
20140166078 | LIGHT CONCENTRATOR AND A SOLAR CELL - A light concentrator of an embodiment includes: a first high refractive index layer, a first low refractive index layer, and a second high refractive index layer stacked in sequence, wherein a surface on the first low refractive index layer side of the first high refractive index layer has a periodic concavoconvex region. | 06-19-2014 |
20140290727 | SOLAR CELL - A solar cell of an embodiment has a first solar cell, a second solar cell, and an intermediate layer between the first and second solar cells. The first solar cell has a Si layer as a light absorbing layer. The second solar cell has as a light absorbing layer one of a group I-III-VI | 10-02-2014 |