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Musilli
Carlo Musilli, Avezzano (l'Aquila) IT
| Patent application number | Description | Published |
|---|---|---|
| 20100232234 | MEMORY DEVICE HAVING IMPROVED PROGRAMMING OPERATION - Some embodiments include methods and devices having a module and memory cells. The module is configured to reduce the amount of electrons in the sources and drains of the memory cells during a programming operation. | 09-16-2010 |
Carlo Musilli, Avezzano IT
| Patent application number | Description | Published |
|---|---|---|
| 20090231923 | REDUCTION OF PUNCH-THROUGH DISTURB DURING PROGRAMMING OF A MEMORY DEVICE - In one or more of the disclosed embodiments, a punch-through disturb effect in a memory device can be reduced by biasing a selected word line at a program voltage to program a selected memory cell, biasing word lines on the drain side of the series string with a V | 09-17-2009 |
| 20100142285 | REDUCING READ FAILURE IN A MEMORY DEVICE - Read failure is reduced by increasing the drain current through a serial string of memory cells during the read operation. In one embodiment, this is accomplished by using a higher read pass voltage for unselected word lines when the selected word line is within a predetermined distance of the drain side of the memory block array. If the selected word line is closer to the source side, a lower read pass voltage is used. In another embodiment, the cells on the word lines closer to the drain side of the memory block array are erased to a lower threshold voltage than the memory cells on the remaining word lines. | 06-10-2010 |
| 20110128782 | REDUCING EFFECTS OF ERASE DISTURB IN A MEMORY DEVICE - Methods for programming and memory devices are disclosed. One such method for programming includes initially biasing a subset of a plurality of control gates of a string of memory cells with a negative voltage, wherein the subset is less than all of the plurality of control gates of the string. The control gate of a selected memory cell is subsequently biased with a programming voltage during a programming phase. | 06-02-2011 |
Carlo Musilli US
| Patent application number | Description | Published |
|---|---|---|
| 20110116311 | REDUCTION OF PUNCH-THROUGH DISTURB DURING PROGRAMMING OF A MEMORY DEVICE - In one or more of the disclosed embodiments, a punch-through disturb effect in a memory device can be reduced by biasing a selected word line at a program voltage to program a selected memory cell, biasing word lines on the drain side of the series string with a V | 05-19-2011 |
Marino Musilli, Sa IT
| Patent application number | Description | Published |
|---|---|---|
| 20110223554 | CANTILEVER ARM FOR ORTHODONTIC ANCHORAGE - An orthodontic cantilever arm includes a wire segment with an outer end portion having a generally “C”-shaped configuration. One leg of the outer end portion is received in a passageway of an orthodontic anchorage device such as a temporary implant and the other leg bears against an outer surface of the anchorage device. The cantilever arm also includes an elongated arm portion, and the two legs of the outer end portion cooperate with each other to restrict certain types of movements of the arm portion. | 09-15-2011 |