| Patent application number | Description | Published |
|---|
| 20110042768 | Semiconductor Device and Method for Manufacturing Semiconductor Device - An object is to prevent a reduction of definition (or resolution) (a peripheral blur) caused when reflected light enters a photoelectric conversion element arranged at a periphery of a photoelectric conversion element arranged at a predetermined address. A semiconductor device is manufactured through the steps of: forming a structure having a first light-transmitting substrate, a plurality of photoelectric conversion elements over the first light-transmitting substrate, a second light-transmitting substrate provided so as to face the plurality of photoelectric conversion elements, a sealant arranged so as to bond the first light-transmitting substrate and the second light-transmitting substrate and surround the plurality of photoelectric conversion elements; and thinning the first light-transmitting substrate by wet etching. | 02-24-2011 |
| 20110043473 | TOUCH SENSOR AND METHOD FOR DRIVING THE SAME AND DISPLAY DEVICE - It is an object to suppress malfunction of a touch sensor, a touch panel, and a device using them by accurate determination whether inputting is performed or not. In addition, it is also an object to enhance the response speed of the determination. A touch panel including a plurality of pixels having photosensors and an image processing portion are included. The photosensor forms a contact image of a portion of an object which touches the touch panel. The image processing portion calculates the area of the contact portion from color data of the contact image and determines on the basis of the area whether inputting to the touch panel is performed or not. | 02-24-2011 |
| 20110043735 | PHOTODETECTOR AND DISPLAY DEVICE - The amount of light incident on a photoelectric conversion element is increased while stray light from a backlight below a light-transmitting substrate is prevented from being incident on the photoelectric conversion element. A light-blocking film is formed with a color filter covering a photoelectric conversion element over a light-transmitting substrate and a color filter covering a photoelectric conversion element in an adjacent pixel which overlap each other at the side with respect to the direction in which light travels. In addition, by providing a microlens over the color filter, light which is conventionally not detected is collected to a photoelectric conversion element, and accordingly the amount of light incident on the photoelectric conversion element is increased. | 02-24-2011 |
| 20110122108 | Semiconductor device and display device - It is an object to perform imaging a high-resolution image in a display device including a photosensor regardless of the intensity of incident light on the photosensor. A display device including a display panel which is provided a photosensor and having a function of imaging by a change of the sensitivity of the photosensor in accordance with the incident light is provided. The sensitivity of the photosensor is improved when the intensity of the incident light is low, so that the imaging accuracy is improved; therefore, misperception of contact is prevented and an obtained image can be clear. | 05-26-2011 |
| 20110204371 | SEMICONDUCTOR DEVICE - An object of the invention is to improve the accuracy of light detection in a photosensor, and to increase the light-receiving area of the photosensor. The photosensor includes: a light-receiving element which converts light into an electric signal; a first transistor which transfers the electric signal; and a second transistor which amplifies the electric signal. The light-receiving element includes a silicon semiconductor, and the first transistor includes an oxide semiconductor. The light-receiving element is a lateral-junction photodiode, and an n-region or a p-region included in the light-receiving element overlaps with the first transistor. | 08-25-2011 |
| 20110215323 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion. | 09-08-2011 |
| 20110215861 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor. | 09-08-2011 |
| 20110220889 | SEMICONDUCTOR DEVICE - An object is to achieve low-power consumption by reducing the off-state current of a transistor in a photosensor. A semiconductor device including a photosensor having a photodiode, a first transistor, and a second transistor; and a read control circuit including a read control transistor, in which the photodiode has a function of supplying charge based on incident light to a gate of the first transistor; the first transistor has a function of storing charge supplied to its gate and converting the charge stored into an output signal; the second transistor has a function of controlling reading of the output signal; the read control transistor functions as a resistor converting the output signal into a voltage signal; and semiconductor layers of the first transistor, the second transistor, and the read control transistor are formed using an oxide semiconductor. | 09-15-2011 |
