Patent application number | Description | Published |
20110042768 | Semiconductor Device and Method for Manufacturing Semiconductor Device - An object is to prevent a reduction of definition (or resolution) (a peripheral blur) caused when reflected light enters a photoelectric conversion element arranged at a periphery of a photoelectric conversion element arranged at a predetermined address. A semiconductor device is manufactured through the steps of: forming a structure having a first light-transmitting substrate, a plurality of photoelectric conversion elements over the first light-transmitting substrate, a second light-transmitting substrate provided so as to face the plurality of photoelectric conversion elements, a sealant arranged so as to bond the first light-transmitting substrate and the second light-transmitting substrate and surround the plurality of photoelectric conversion elements; and thinning the first light-transmitting substrate by wet etching. | 02-24-2011 |
20110043473 | TOUCH SENSOR AND METHOD FOR DRIVING THE SAME AND DISPLAY DEVICE - It is an object to suppress malfunction of a touch sensor, a touch panel, and a device using them by accurate determination whether inputting is performed or not. In addition, it is also an object to enhance the response speed of the determination. A touch panel including a plurality of pixels having photosensors and an image processing portion are included. The photosensor forms a contact image of a portion of an object which touches the touch panel. The image processing portion calculates the area of the contact portion from color data of the contact image and determines on the basis of the area whether inputting to the touch panel is performed or not. | 02-24-2011 |
20110043735 | PHOTODETECTOR AND DISPLAY DEVICE - The amount of light incident on a photoelectric conversion element is increased while stray light from a backlight below a light-transmitting substrate is prevented from being incident on the photoelectric conversion element. A light-blocking film is formed with a color filter covering a photoelectric conversion element over a light-transmitting substrate and a color filter covering a photoelectric conversion element in an adjacent pixel which overlap each other at the side with respect to the direction in which light travels. In addition, by providing a microlens over the color filter, light which is conventionally not detected is collected to a photoelectric conversion element, and accordingly the amount of light incident on the photoelectric conversion element is increased. | 02-24-2011 |
20110122108 | Semiconductor device and display device - It is an object to perform imaging a high-resolution image in a display device including a photosensor regardless of the intensity of incident light on the photosensor. A display device including a display panel which is provided a photosensor and having a function of imaging by a change of the sensitivity of the photosensor in accordance with the incident light is provided. The sensitivity of the photosensor is improved when the intensity of the incident light is low, so that the imaging accuracy is improved; therefore, misperception of contact is prevented and an obtained image can be clear. | 05-26-2011 |
20110204371 | SEMICONDUCTOR DEVICE - An object of the invention is to improve the accuracy of light detection in a photosensor, and to increase the light-receiving area of the photosensor. The photosensor includes: a light-receiving element which converts light into an electric signal; a first transistor which transfers the electric signal; and a second transistor which amplifies the electric signal. The light-receiving element includes a silicon semiconductor, and the first transistor includes an oxide semiconductor. The light-receiving element is a lateral-junction photodiode, and an n-region or a p-region included in the light-receiving element overlaps with the first transistor. | 08-25-2011 |
20110215323 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion. | 09-08-2011 |
20110215861 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor. | 09-08-2011 |
20110220889 | SEMICONDUCTOR DEVICE - An object is to achieve low-power consumption by reducing the off-state current of a transistor in a photosensor. A semiconductor device including a photosensor having a photodiode, a first transistor, and a second transistor; and a read control circuit including a read control transistor, in which the photodiode has a function of supplying charge based on incident light to a gate of the first transistor; the first transistor has a function of storing charge supplied to its gate and converting the charge stored into an output signal; the second transistor has a function of controlling reading of the output signal; the read control transistor functions as a resistor converting the output signal into a voltage signal; and semiconductor layers of the first transistor, the second transistor, and the read control transistor are formed using an oxide semiconductor. | 09-15-2011 |
20110235389 | SEMICONDUCTOR DEVICE - An object is reduction in power consumption of a semiconductor device including a memory circuit. In the semiconductor device including a memory circuit, the memory circuit includes a memory cell including a semiconductor element and a memory cell that does not include a semiconductor element in a region defined by a word line and a bit line which intersect with each other. A transistor formed using an oxide semiconductor so as to have extremely low off-state current is used as the semiconductor element, so that the reading precision is improved and thus low voltage operation can be performed. The memory cells store data high or data low. The memory cell comprising a semiconductor element stores minor data of high and low, and the memory cell that does not comprise the semiconductor element stores major data of high and low. | 09-29-2011 |
20110291013 | PHOTODETECTOR - Influence of external light is suppressed. With a photodetector including a photodetector circuit which generates a data signal in accordance with illuminance of incident light and a light unit which overlaps with the photodetector circuit, a first data signal is generated by the photodetector circuit when the light unit is in an ON state, a second data signal is formed by the photodetector circuit when the light unit is in an OFF state, and the first data signal and the second data signal are compared, so that a difference data signal that is data of a difference between the two compared data signals is generated. | 12-01-2011 |
20120001847 | Driving Method of Input/Output Device - A method for driving an input/output device, including: generating first data by putting a first region of a light unit in a lighted condition and a second region of the light unit in the lighted condition; generating second data by putting the first region in the lighted condition and the second region in an unlighted condition; generating third data by putting the first region in the unlighted condition and the second region in the lighted condition; generating fourth data by putting the first region in the unlighted condition and the second region in the unlighted condition; and generating difference data of either the first data or the third data and either the second data or the fourth data by using a data processor. | 01-05-2012 |
20120217515 | DISPLAY DEVICE - A display device includes a pixel area including pixels arranged in a matrix and having a horizontal resolution of 350 ppi or more and a color filter layer overlapping with the pixel area. The pixels each include a first transistor whose gate is electrically connected to a scan line and whose one of a source and a drain is electrically connected to a signal line; a second transistor whose gate is electrically connected to the other of the source and the drain of the first transistor and whose one of a source and a drain is electrically connected to a current-supplying line; and a light-emitting element electrically connected to the other of the source and the drain of the second transistor. The first and second transistors each have a channel formation region including a single crystal semiconductor. | 08-30-2012 |
20130015332 | PHOTODETECTORAANM KOZUMA; MunehiroAACI IseharaAACO JPAAGP KOZUMA; Munehiro Isehara JP - Provided is a photodetector in which narrowing of a detecting range of light is suppressed. The photodetector includes a photodetector circuit for outputting a first optical data signal and a second optical data signal in which values are determined in accordance with an illuminance of incident light, an analog arithmetic circuit to which the first optical data signal and the second optical data signal are input and in which an arithmetic processing is performed with the use of the first optical data signal and the second optical data signal, and a switching circuit for switching an arithmetic processing in the analog arithmetic circuit between an addition operation and a subtraction operation of the first optical data signal and the second optical data signal. | 01-17-2013 |
20130075594 | PHOTODETECTOR AND METHOD FOR DRIVING PHOTODETECTOR - Adverse effects of noise are reduced. A photodetector circuit, a difference data generation circuit, and a data input selection circuit are included. The photodetector circuit has a function of generating an optical data signal. A first data signal and a second data signal is input to the difference data generation circuit and the difference data generation circuit has a function of generating difference data of data of the first data signal and data of the second data signal. The data input selection circuit has a function of determining that the data of optical data signal is regarded as data of the first data signal or data of the second data signal. | 03-28-2013 |
20130299888 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion. | 11-14-2013 |
20130321366 | SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME - To reduce the effect of external light and to improve the accuracy of detecting the location of a touch. In an image-capture period, light emission from a self-light-emitting element is controlled, and imaging data at the time of displaying white on a display screen and imaging data at the time of displaying black on the display screen are output from each sensor pixel. The location of a sensor pixel where a difference between the two pieces of imaging data output from the same sensor pixel is the greatest is detected. Thus, the location of a touch of the object on the display screen is detected with high accuracy. By utilizing a difference between imaging data at the time of reverse display, the effect of external light can be reduced. | 12-05-2013 |
20140240294 | PHOTODETECTOR - Influence of external light is suppressed. With a photodetector including a photodetector circuit which generates a data signal in accordance with illuminance of incident light and a light unit which overlaps with the photodetector circuit, a first data signal is generated by the photodetector circuit when the light unit is in an ON state, a second data signal is formed by the photodetector circuit when the light unit is in an OFF state, and the first data signal and the second data signal are compared, so that a difference data signal that is data of a difference between the two compared data signals is generated. | 08-28-2014 |
20140267864 | SEMICONDUCTOR DEVICE - An object is to achieve low-power consumption by reducing the off-state current of a transistor in a photosensor. A semiconductor device including a photosensor having a photodiode, a first transistor, and a second transistor; and a read control circuit including a read control transistor, in which the photodiode has a function of supplying charge based on incident light to a gate of the first transistor; the first transistor has a function of storing charge supplied to its gate and converting the charge stored into an output signal; the second transistor has a function of controlling reading of the output signal; the read control transistor functions as a resistor converting the output signal into a voltage signal; and semiconductor layers of the first transistor, the second transistor, and the read control transistor are formed using an oxide semiconductor. | 09-18-2014 |
20140285234 | SEMICONDUCTOR DEVICE - To provide a charge pump circuit to manufacture a low-power-consumption PLD. A semiconductor device includes a first circuit and a second circuit electrically connected to the first circuit. A charge pump circuit formed of a transistor including an oxide semiconductor and a boosting control circuit controlling the charge pump circuit are provided between the first circuit and the second circuit. The first circuit and the charge pump circuit operate at first power supply voltage, and the boosting control circuit and the second circuit operate at second power supply voltage. The first power supply voltage is lower than the second power supply voltage. | 09-25-2014 |
20140286076 | SEMICONDUCTOR DEVICE - A nonvolatile semiconductor device which can be driven at low voltage is provided. A nonvolatile semiconductor device with low power consumption is provided. A Schmitt trigger NAND circuit and a Schmitt trigger inverter are included. Data is held in a period when the supply of power supply voltage is continued, and a potential corresponding to the data is stored at a node electrically connected to a capacitor before a period when the supply of power supply voltage is stopped. By utilizing a change in channel resistance of a transistor whose gate is connected to the node, the data is restored in response to the restart of the supply of power supply voltage. | 09-25-2014 |
20140368235 | PROGRAMMABLE LOGIC DEVICE - Data of a register in a programmable logic element is retained. A volatile storage circuit and a nonvolatile storage circuit are provided in a register of a programmable logic element whose function can be changed in response to a plurality of context signals. The nonvolatile storage circuit includes nonvolatile storage portions for storing data in the register. The number of nonvolatile storage portions corresponds to the number of context signals. With such a structure, the function can be changed each time context signals are switched and data in the register that is changed when the function is changed can be backed up to the nonvolatile storage portion in each function. In addition, the function can be changed each time context signals are switched and the data in the register that is backed up when the function is changed can be recovered to the volatile storage circuit. | 12-18-2014 |
Patent application number | Description | Published |
20080211561 | Clock Signal Generation Circuit and Semiconductor Device - The semiconductor device is provided with a clock signal generation circuit that includes a reference clock signal generation circuit which generates a first reference clock signal, a first counter circuit which counts the number of rising edges of the first reference clock signal by using the first reference clock signal and a synchronizing signal, a second counter circuit which counts the number of rising edges of the first reference clock signal by using an enumerated value of the first counter circuit, a first divider circuit which divides a frequency of the first reference clock signal by using the enumerated value of the first counter circuit and generates a second reference clock signal, and a second divider circuit which divides a frequency of the second reference clock signal and generates a clock signal. | 09-04-2008 |
20080259693 | Semiconductor Device - A memory circuit includes a plurality of word lines, a plurality of bit lines, and a plurality of memory cells. Configurations of the plurality of memory cells are determined depending on the data (“high” or “low”) which is stored in the memory cells. Data array such as a program stored in the memory circuit is analyzed in advance. In the case where “high” is the majority data, memory cells storing “high” are formed with vacant cells in which a semiconductor element is not formed. | 10-23-2008 |
20080297320 | Semiconductor device and IC label, IC tag, and IC card provided with the semiconductor device - A charge accumulation circuit having a structure in which a capacitor is divided into a plurality of pieces and the divided capacitors are connected in parallel through switches is provided. The charge accumulation circuit controls the switch provided between the capacitors and thus can dynamically vary electrostatic capacitance of the charge accumulation circuit which applies a voltage to a constant voltage circuit. | 12-04-2008 |
20090057418 | Semiconductor device - A semiconductor device is provided, which includes an antenna, a first circuit (a boosting circuit), a second circuit (a reference voltage supply circuit), and a third circuit (a voltage comparison circuit). The first circuit is electrically connected to the antenna, and includes at least a first charge pump, a second charge pump, and a first switch disposed between the first charge pump and the second charge pump. The second circuit is configured to generate a reference voltage in accordance with a first output voltage supplied from the first charge pump. The third circuit is configured to compare the reference voltage, the first output voltage, and a second output voltage supplied from the second charge pump. | 03-05-2009 |
20100118620 | Semiconductor Device - A memory circuit includes a plurality of word lines, a plurality of bit lines, and a plurality of memory cells. Configurations of the plurality of memory cells are determined depending on the data (“high” or “low”) which is stored in the memory cells. Data array such as a program stored in the memory circuit is analyzed in advance. In the case where “high” is the majority data, memory cells storing “high” are formed with vacant cells in which a semiconductor element is not formed. | 05-13-2010 |
20100300862 | Touch Panel - A touch sensor (touch panel) which can be formed over the same substrate as a display portion is provided. Alternatively, a touch sensor (touch panel) which does not cause degradation in the quality of an image displayed on a display portion is provided. The touch panel includes a light-emitting element and a microstructure in which a pair of electrodes facing each other is isolated with an insulating material. As the insulating material, an elastic material or a material having a hole is used so that a filler layer formed using the insulating material can be deformed when a movable portion operates. It is preferable to use a material which is softened or hardened by certain treatment (e.g., heat treatment or chemical treatment) after formation. | 12-02-2010 |
20120024965 | SEMICONDUCTOR DEVICE AND IC LABEL, IC TAG, AND IC CARD PROVIDED WITH THE SEMICONDUCTOR DEVICE - A charge accumulation circuit having a structure in which a capacitor is divided into a plurality of pieces and the divided capacitors are connected in parallel through switches is provided. The charge accumulation circuit controls the switch provided between the capacitors and thus can dynamically vary electrostatic capacitance of the charge accumulation circuit which applies a voltage to a constant voltage circuit. | 02-02-2012 |
20120132719 | SEMICONDUCTOR DEVICE - A semiconductor device is provided with a power supply circuit having a function to generate a power supply voltage from a wireless signal and an A/D converter circuit having a function to detect the strength of the wireless signal by an A/D conversion of a voltage generated from the wireless signal. This enables to provide a semiconductor device which does not require replacement of batteries, has few limitations on its physical shape and mass, and has a function to detect a physical position. By formation of the semiconductor device with use of a thin film transistor formed over a plastic substrate, a lightweight semiconductor device, which has flexibility in physical shape and a function to detect a physical location, can be provided at low cost. | 05-31-2012 |
20140320766 | Touch Panel - A touch sensor (touch panel) which can be formed over the same substrate as a display portion is provided. Alternatively, a touch sensor (touch panel) which does not cause degradation in the quality of an image displayed on a display portion is provided. The touch panel includes a light-emitting element and a microstructure in which a pair of electrodes facing each other is isolated with an insulating material. As the insulating material, an elastic material or a material having a hole is used so that a filler layer formed using the insulating material can be deformed when a movable portion operates. It is preferable to use a material which is softened or hardened by certain treatment (e.g., heat treatment or chemical treatment) after formation. | 10-30-2014 |