Patent application number | Description | Published |
20100327413 | HARDMASK OPEN AND ETCH PROFILE CONTROL WITH HARDMASK OPEN - A method for opening a carbon-based hardmask layer formed on an etch layer over a substrate is provided. The hardmask layer is disposed below a patterned mask. The substrate is placed in a plasma processing chamber. The hardmask layer is opened by flowing a hardmask opening gas including a COS component into the plasma chamber, forming a plasma from the hardmask opening gas, and stopping the flow of the hardmask opening gas. The hardmask layer may be made of amorphous carbon, or made of spun-on carbon, and the hardmask opening gas may further include O | 12-30-2010 |
20110021031 | HIGH LIFETIME CONSUMABLE SILICON NITRIDE-SILICON DIOXIDE PLASMA PROCESSING COMPONENTS - A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component. | 01-27-2011 |
20110132874 | SMALL PLASMA CHAMBER SYSTEMS AND METHODS - A plasma etch processing tool is disclosed. The plasma etch processing tool, comprising a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support. A method for performing a plasma etch is also disclosed. | 06-09-2011 |
20140151333 | Small Plasma Chamber Systems and Methods - A plasma deposition chamber is disclosed. A substrate support for supporting a surface to be processed is in the chamber. A processing head including an array of plasma microchambers is also in the chamber. Each of the plasma microchambers includes an open side disposed over at least a first portion of the surface to be processed. The open side has an area less than an entire area of the surface to be processed. A process gas source is coupled to the chamber to provide a process gas the array of plasma microchambers. A radio frequency power supply is connected to at least one electrode of the processing head. The array of plasma microchambers is configured to generate a plasma using the process gas to deposit a layer over the at least first portion of the surface to be processed. A method for performing a plasma deposition is also disclosed. | 06-05-2014 |
20140287593 | HIGH THROUGHPUT MULTI-LAYER STACK DEPOSITION - Methods and apparatus for high rate formation of multi-layer stacks on semiconductor substrate is provided. A chamber for forming such stacks at high rates includes a first precursor line and a second precursor line. The first precursor line is coupled to a first diverter, which is coupled to a gas inlet in a lid assembly of the chamber. The second precursor line is coupled to a second diverter, which is also coupled to the gas inlet. The first diverter is also coupled to a first divert line, and the second diverter is coupled to a second divert line. Each of the first and second divert lines is coupled to a divert exhaust system. A chamber exhaust system is coupled to the chamber. The diverters are typically located close to the lid assembly. | 09-25-2014 |
20150187563 | PHOTO-ASSISTED DEPOSITION OF FLOWABLE FILMS - A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV activation are encouraged to deposit on the substrate to form a flowable film on the substrate. The substrate may be cooled to encourage deposition. The film may be hardened by heating and/or by further exposure to UV radiation. | 07-02-2015 |
20150194317 | DEVELOPMENT OF HIGH ETCH SELECTIVE HARDMASK MATERIAL BY ION IMPLANTATION INTO AMORPHOUS CARBON FILMS - Embodiments described herein provide for a method of forming an etch selective hardmask. An amorphous carbon hardmask is implanted with various dopants to increase the hardness and density of the hardmask. The ion implantation of the amorphous carbon hardmask also maintains or reduces the internal stress of the hardmask. The etch selective hardmask generally provides for improved patterning in advanced NAND and DRAM devices. | 07-09-2015 |
20150206739 | DEPOSITION OF HETEROATOM-DOPED CARBON FILMS - Easily removable heteroatom-doped carbon-containing layers are deposited. The carbon-containing layers may be used as hardmasks. The heteroatom-doped carbon-containing hardmasks have high etch selectivity and density and also a low compressive stress, which will reduce or eliminate problems with wafer bow. Heteroatoms incorporated into the hardmask include sulfur, phosphorous, nitrogen, oxygen, and fluorine, all of which have low reactivity towards commonly used etchants. When sulfur is used as the heteroatom, the hardmask is easily removed, which simplifies the fabrication of NAND devices, DRAM devices, and other devices. | 07-23-2015 |
20150206757 | DIELECTRIC-METAL STACK FOR 3D FLASH MEMORY APPLICATION - A method is provided for forming a stack of film layers for use in 3D memory devices. The method starts with providing a substrate in a processing chamber of a deposition reactor. Then one or more process gases suitable for forming a dielectric layer are supplied into the processing chamber of the deposition reactor forming a dielectric layer on the substrate. Then one or more process gases suitable for forming a metallic layer are supplied into the processing chamber of the deposition reactor forming a metallic layer on the dielectric layer. Then one or more process gases suitable for forming a metallic nitride adhesion layer are supplied into the processing chamber of the deposition reactor forming a metallic nitride adhesion layer on the metallic layer. The sequence is then repeated to form a desired number of layers. | 07-23-2015 |