| Patent application number | Description | Published |
|---|
| 20090090616 | SYSTEM AND METHOD FOR PLASMA ENHANCED THIN FILM DEPOSITION - A system and a method for plasma enhanced thin film deposition are disclosed, in which the system comprises a plasma enhanced thin film deposition apparatus and a plasma process monitoring device. The plasma enhanced thin film deposition apparatus receives pulsed power and a reactive gas, whereby plasma discharging occurs to ionize the reactive gas into a plurality of radicals for thin film deposition. The plasma process monitoring device comprises an optical emission spectroscopy (OES) and a pulsed plasma modulation device, in which the OES detects spectrum intensities of the radicals and the pulsed plasma modulation device calculates a spectrum intensity ratio of the radicals so as to modulate the plasma duty time of pulsed power, thereby high deposition rate as well as real-time monitoring on thin film deposition quality can be achieved. | 04-09-2009 |
| 20090151637 | MICROWAVE-EXCITED PLASMA SOURCE USING RIDGED WAVE-GUIDE LINE-TYPE MICROWAVE PLASMA REACTOR - A microwave-excited plasma source using a ridged wave-guide line-type microwave plasma reactor is disclosed. The microwave-excited plasma source comprises a reaction chamber, a ridged wave-guide and a separation plate. The ridged wave-guide is disposed on the reaction chamber, and comprises a frame portion, a ridge portion and a line-shaped slot. The line-shaped slot is disposed on a first side of the frame portion, and the ridge portion facing the line-shaped slot is disposed on a second side of the frame portion. The separation plate is disposed on the line-shaped slot. Moreover, the ridged wave-guide is suitable for concentrating microwave power, which is transmitted to the reaction chamber through the line-shaped slot in order to excite plasma. | 06-18-2009 |
| 20100116623 | TRANSMISSION DEVICE FOR THIN AND BRITTLENESS SUBSTRATE - A transmission device for thin and brittleness substrate is disclosed, which comprises: a plurality of transportation rollers and a plurality of pinch rollers. Each transportation roller further comprises: a rigid spindle; and a plurality of elastic supporting wheels, mounted on the spindle. Each pinch roller comprises: a sleeve; a spindle, ensheathed in the sleeve; and a plurality of pressing wheels, mounted on the sleeve at positions corresponding to the supporting wheels. When the transportation rollers are driven to rotate, a substrate sandwiched between the supporting wheels and the pressing wheels will be push to move while subjecting to a friction originated from a sufficient holding force by the supporting wheels and the pressing wheels, and consequently, providing an improved buffering capability for deformation absorption that enables the transmission device to guide the thin substrate to move smoothly without causing buckling or scratching to the thin substrate. | 05-13-2010 |
| 20100141147 | CAPACITIVELY COUPLED PLASMA (CCP) GENERATOR WITH TWO INPUT PORTS - A capacitively coupled plasma (CCP) generator with two input ports, which is especially used as a large-area capacitively coupled plasma (CCP) generator. In the inventive CCP generator, only a RF power supply is required to provide the two input ports with RF power. The input impedance at each of the input ports is adjustable so that the standing wave between two rectangular electrodes can be eliminated to achieve plasma uniformity. | 06-10-2010 |
| 20100164381 | LONG LINEAR-TYPE MICROWAVE PLASMA SOURCE USING VARIABLY-REDUCED-HEIGHT RECTANGULAR WAVEGUIDE AS PLASMA REACTOR - A long linear-type microwave plasma source using a variably-reduced-height rectangular waveguide as the plasma reactor has been developed. Microwave power is fed from the both sides of the waveguide and is coupled into plasma through a long slot cut on the broad side of the waveguide. The reduced height of the waveguide is variable in order to control the coupling between microwave and plasma so that the plasma uniformity can remain a high quality when extending the length of the linear-type plasma source. | 07-01-2010 |
| 20110073038 | GAS DISTRIBUTION PLATE AND APPARATUS USING THE SAME - The present invention provides a gas distribution plate for providing at least two gas flowing channel. In one embodiment, the gas distribution plate has a first flowing channel, at least a second flowing channel disposed around the first flowing channel, and a tapered opening communicating with the first and the second flowing channel. In another embodiment, the gas distribution plate has a first flowing channel passing through a first and a second surface of the gas distribution plate, a second flowing channel paralleling to the first surface and a third flowing channel disposed at the second surface and communicating with the second flowing channel. The ends of the first and the third flowing channel have a tapered opening respectively. Besides, the present further provides a gas distribution apparatus for allowing at least two separate gases to be delivered independently into a process chamber while enabling the gases to be mixed completely after entering the processing chamber. | 03-31-2011 |
| 20110132758 | STRUCTURE FOR INCREASING UTILIZATION RATE OF TARGET - A structure for increasing utilization rate of target is disclosed, which comprises: a magnetic base, capable of moving relative to a target in a reciprocating manner; and two magnetic conductors, disposed respectively at two motion limits with respect to the reciprocating range of the magnetic base. Thereby, when the magnetic base is moved to a position close to any one of magnetic conductors, the surface magnetic field intensity of the target that is caused by the magnetic base is reduced so that the ion bombardment happening at the two ends of the target will be eased off for increasing the utilization rate of the target. | 06-09-2011 |
| 20110136269 | METHOD FOR DEPOSITING MICROCRYSTALLINE SILICON AND MONITOR DEVICE OF PLASMA ENHANCED DEPOSITION - A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and Hα and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and Hα within an allowed range of a target value for improving film depositing rate. | 06-09-2011 |
