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Muehlberger
Charles B. Muehlberger, Baltimore, MD US
| Patent application number | Description | Published |
|---|---|---|
| 20110251055 | Supported Precious Metal Catalysts Via Hydrothermal Deposition - A process for making a catalyst having precious metal nanoparticles deposited on a support includes first providing an aqueous dispersion of support particles. A pre-treatment slurry is prepared by mixing the aqueous dispersion of support particles with a water-soluble precious metal precursor and a reducing agent. The pre-treatment slurry is hydrothermally treated at a temperature in the range of from about 40° C. to about 220° C. for a time sufficient to deposit precious metal nanoparticles on the surface of the support particles, the precious metal nanoparticles having an average particle size less about 50 nm. | 10-13-2011 |
Fabian Muehlberger, Freising DE
| Patent application number | Description | Published |
|---|---|---|
| 20090218482 | METHOD AND DEVICE FOR THE MASS SPECTROMETRIC DETECTION OF COMPOUNDS - A method for mass-spectrometric detection of compounds in a gas flow includes: alternatingly forming first and a second beams by switching between electron pulses/pulse trains and photon pulses/pulse trains, the photon pulses/pulse trains being generated by an excimer lamp, and the switching between the electron pulses/pulse trains and the photon pulses/pulse trains occurring at a switching frequency above 50 Hz; disposing the gas flow in an ionization region crossed by the first and second beams so as to ionize volume units in the gas flow so as to form ions of the compounds; deflecting the ions in an effective region of an electric field to a mass-spectrometric device; and sensing the ions with a mass-spectrometric process of the mass-spectrometric device. | 09-03-2009 |
Fridolin Muehlberger, Reit Im Winkl DE
| Patent application number | Description | Published |
|---|---|---|
| 20110053483 | EXHAUST APPARATUS, SYSTEM, AND METHOD FOR ENHANCED CAPTURE AND CONTAINMENT - A ventilation exhaust intake device is located at ceiling level of a production space and has a low profile form with combination of vertical and horizontal jets. Recesses and other feature are provided to enhance capture and containment and other functional aspects. Certain embodiments include a light source adjacent the jet registers. | 03-03-2011 |
Norbert Muehlberger, Aalen-Ebnat DE
| Patent application number | Description | Published |
|---|---|---|
| 20110001947 | FACET MIRROR FOR USE IN A PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY - A facet mirror is to be used as a bundle-guiding optical component in a projection exposure apparatus for microlithography. The facet mirror has a plurality of separate mirrors. For individual deflection of incident illumination light, the separate mirrors are in each case connected to an actuator in such a way that they are separately tiltable about at least one tilt axis. A control device, which is connected to the actuators, is configured in such a way that a given grouping of the separate mirrors can be grouped into separate mirror groups that include in each case at least two separate mirrors. The result is a facet mirror which, when installed in the projection exposure apparatus, increases the variability for setting various illumination geometries of an object field to be illuminated by the projection exposure apparatus. Various embodiments of separate mirrors for forming the facet mirrors are described. | 01-06-2011 |
| 20110235012 | PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY FOR THE PRODUCTION OF SEMICONDUCTOR COMPONENTS - A projection exposure apparatus for microlithography for the production of semiconductor components includes at least one optical assembly with at least one optical element which can be actuated in a mechanically controlled manner is mounted in a structure. For carrying out the mechanical actuation, a control signal transmission device and/or an energy transmission device are/is provided, which introduce(s) no parasitic mechanical effects into the optical assembly at least during specific operating states of the projection exposure apparatus. | 09-29-2011 |